Untitled
Abstract: No abstract text available
Text: SNN5010D Advanced N-Ch Power MOSFET DC/DC CONVERTER APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=100V Min. Low Crss : Crss=130pF(Typ.) Low gate charge : Qg=75nC(Typ.) Low RDS(ON) : RDS(ON)=26m (Max.) D D G Ordering Information
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SNN5010D
130pF
SNN5010
O-252
KSD-T6O016-001
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Untitled
Abstract: No abstract text available
Text: SNN5010D Advanced N-Ch Power MOSFET DC/DC CONVERTER APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=100V Min. Low Crss : Crss=130pF(Typ.) Low gate charge : Qg=75nC(Typ.) Low RDS(ON) : RDS(ON)=26mΩ(Max.) D D G Ordering Information
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SNN5010D
130pF
SNN5010
O-252
KSD-T6O016-001
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75nC
Abstract: SNN5010D
Text: SNN5010D Semiconductor N-Channel Power MOSFET DC/DC Converter APPLICATIONS Features PIN Connection • High Voltage: BVDSS=100 Min. • Low Crss : Crss=130pF(Typ.) • Low gate charge : Qg=75nC(Typ.) • Low RDS(on) :RDS(on)=26mΩ(Max.) D D G G Ordering Information
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SNN5010D
130pF
SNN5010
O-252
KSD-T6O016-000
75nC
SNN5010D
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snn5010d2
Abstract: No abstract text available
Text: SNN5010D2 Semiconductor N-Channel Power MOSFET DC/DC Converter APPLICATIONS Features PIN Connection • High Voltage: BVDSS=100 Min. • Low Crss : Crss=130pF(Typ.) • Low gate charge : Qg=75nC(Typ.) • Low RDS(on) :RDS(on)=26mΩ(Max.) D D G Ordering Information
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SNN5010D2
130pF
SNN5010
KSD-T6S004-000
snn5010d2
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WD7600
Abstract: No abstract text available
Text: WD76C20ALV INTRODUCTION 1.0 INTRODUCTION 1.1 DOCUMENT SCOPE • This data sheet applies to both the 3.3 volt or 5.0 volt or 3.3 volt and 5.0 volt mixed voltage WD76C20ALV device. The WD76C20ALV can be used with either a 5.0 volt power supply or a low voltage 3.3 volt power supply. Some references are
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WD76C20ALV
WD76C20ALV
WD76C20A
100-pin
84-PIN
WD7600
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G15N60
Abstract: G15N60 IGBT PG-TO-263-3-2 PG-TO263-3-2 SGB15N60
Text: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGB15N60
P-TO-263-3-2
G15N60
PG-TO-263-3-2
G15N60
G15N60 IGBT
PG-TO-263-3-2
PG-TO263-3-2
SGB15N60
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Untitled
Abstract: No abstract text available
Text: MAX14850 Six-Channel Digital Isolator ABSOLUTE MAXIMUM RATINGS VCCA to to +6V VCCB to to +6V OUTA1, OUTA2 to GNDA. -0.3V to VCCA + 0.3V
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MAX14850
Q50mA
600VRMS
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PDF
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WD7600
Abstract: S3V 77 57-DB3 CHN 535 S3V 83 WD76C20ALV D76C20ALV
Text: WD76C20ALV INTRODUCTION 1.0 INTRODUCTION 1.1 DOCUMENT SCOPE • This data sheet applies to both the 3.3 volt or 5.0 volt or 3.3 volt and 5.0 volt mixed voltage WD76C20ALV device. The WD76C20ALV can be used with either a 5.0 volt power supply or a low voltage 3.3 volt power supply. Some references are
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WD76C20ALV
84-pin
100pin
100-pin
WD76C20ALV
WD7600
S3V 77
57-DB3
CHN 535
S3V 83
D76C20ALV
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DIAC DB3
Abstract: diac DB3 application note STW14NK50 BYV52-200 opto diac asymmetrical half bridge controller ROE EYS 06 ROE capacitor EYS asymmetrical half bridge converter AN1621
Text: AN1621 APPLICATION NOTE 300W SECONDARY CONTROLLED TWO-SWITCH FORWARD CONVERTER WITH L5991A 1 INTRODUCTION A typical off-line isolated switch-mode power supply has the controller located on the primary side of the transformer, whereas the output voltages to be controlled and the housekeeping functions are located on the secondary side. Usually the voltage feedback signal is transferred to the primary controller by using an optocoupler
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AN1621
L5991A
DIAC DB3
diac DB3 application note
STW14NK50
BYV52-200
opto diac
asymmetrical half bridge controller
ROE EYS 06
ROE capacitor EYS
asymmetrical half bridge converter
AN1621
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i2c isolator
Abstract: No abstract text available
Text: 19-5192; Rev 0; 6/10 TION KIT EVALUA BLE AVAILA 12-Channel, High-Voltage Sensor, Smart Data-Acquisition Interface The MAX11068 is a programmable, highly integrated, high-voltage, 12-channel, battery-monitoring smart dataacquisition interface. It is optimized for use with batteries used in automotive systems, hybrid electric battery
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12-Channel,
12-Cell
12-Channel
12-Bit
U38-1
MAX11068
i2c isolator
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE MAX11068 LE AVAILAB 12-Channel, High-Voltage Sensor, Smart Data-Acquisition Interface General Description The MAX11068 is a programmable, highly integrated, high-voltage, 12-channel, battery-monitoring smart dataacquisition interface. It is optimized for use with batteries used in automotive systems, hybrid electric battery
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MAX11068
12-Channel,
MAX11068
12-channel
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Untitled
Abstract: No abstract text available
Text: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGB20N60
P-TO-263-3-2
O-263AB)
G20N60
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G15N60
Abstract: PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT
Text: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGB15N60
PG-TO-263-3-2
G15N60
G15N60
PG-TO-263-3-2
PG-TO263-3-2
SGB15N60
G15N60 IGBT
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igbt 400V 20A
Abstract: Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60 SGW20N60
Text: SGP20N60 SGB20N60, SGW20N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP20N60
SGB20N60,
SGW20N60
O-220AB
Q67041-A4712-A2
SGB20N60
O-263AB
Q67041-A4712-A4
O-247AC
igbt 400V 20A
Q67040-S4236
Q67041-A4712-A2
Q67041-A4712-A4
SGB20N60
SGP20N60
SGW20N60
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NTHS0603N01N1003FF
Abstract: MAX8934G 940mA LMK105BJ104KV MAX8934 THM 104 THERMISTOR max8943 3.7v -5v EMK212BJ106
Text: 19-5296; Rev 0; 6/10 Dual-Input Linear Charger, Smart Power Selector with Advanced Battery Temperature Monitoring The MAX8934G dual-input Li+/Li-Poly linear battery charger with Smart Power SelectorK safely charges a single Li+/Li-Poly cell in accordance with JEITA* recommendations. The MAX8934G monitors the battery temperature
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MAX8934G
MAX8934G
NTHS0603N01N1003FF
940mA
LMK105BJ104KV
MAX8934
THM 104 THERMISTOR
max8943
3.7v -5v
EMK212BJ106
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Untitled
Abstract: No abstract text available
Text: Ceramic Chip Capacitors Multilayer chip capacitors have a low residual inductance, an excellent frequency response and minimal stray capacitance since there are no leads. These characteristics enable design to be very close to the theoretical values of the capacitors.
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Untitled
Abstract: No abstract text available
Text: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
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IHW25N120R2
PG-TO-247-3
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H30R1602
Abstract: igbt 1600V 20A
Text: IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers :
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IHW30N160R2
PG-TO-247-3
H30R1602
igbt 1600V 20A
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k10n60
Abstract: SKB10N60A
Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB10N60A
SKB10N60A
k10n60
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K15N60
Abstract: SKP15N60 K15N60
Text: SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP15N60
SKW15N60
PG-TO-220-3-1
O-220AB)
SKW15N60
K15N60
SKP15N60 K15N60
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g10n60
Abstract: SGB10N60A J-00M SGB10N60A equivalent
Text: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGB10N60A
SGB10N60A
g10n60
J-00M
SGB10N60A equivalent
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PDF
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G20N60
Abstract: G20N60 IGBT
Text: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP20N60
SGW20N60
PG-TO-220-3-1
O-220AB)
PG-TO-247-3-1
O-247AC)
SGW20N60
G20N60
G20N60 IGBT
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g20n60
Abstract: G20N60 IGBT
Text: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGB20N60
SGB20N60
g20n60
G20N60 IGBT
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Untitled
Abstract: No abstract text available
Text: SGP15N60 SGB15N60, SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP15N60
SGB15N60,
SGW15N60
SGB15N60
SGW15N60
O-220AB
O-263AB
O-247AC
Q67040-S4508
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