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    75309P Price and Stock

    Rochester Electronics LLC HUFA75309P3

    MOSFET N-CH 55V 19A TO220-3
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    DigiKey HUFA75309P3 Tube 13,174 1,211
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    Rochester Electronics LLC HUF75309P3

    MOSFET N-CH 55V 19A TO220-3
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    DigiKey HUF75309P3 Tube 9,334 683
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    onsemi HUF75309P3

    MOSFET N-CH 55V 19A TO220-3
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    onsemi HUFA75309P3

    MOSFET N-CH 55V 19A TO220-3
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    DigiKey HUFA75309P3 Tube 800
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    Fairchild Semiconductor Corporation HUF75309P3

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    Bristol Electronics HUF75309P3 121
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    Rochester Electronics HUF75309P3 9,334 1
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    75309P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    75309P

    Abstract: TA75309
    Text: 75309P3, HUF75309D3, HUF75309D3S HARRIS S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 17A, 55V • Ultra Low On-Resistance, ros ON = 0-070i2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		HUF75309P3, HUF75309D3, HUF75309D3S 0-070i2 TB334, HUF75309 75309P TA75309 PDF

    75309P

    Abstract: HUFA75309D3 HUFA75309D3S HUFA75309D3ST HUFA75309P3 TB334 TO-252 N-channel power MOSFET
    Text: 75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUFA75309P3, HUFA75309D3, HUFA75309D3S 75309P HUFA75309D3 HUFA75309D3S HUFA75309D3ST HUFA75309P3 TB334 TO-252 N-channel power MOSFET PDF

    TL 431 model SPICE

    Abstract: Simulation Model tl 431
    Text: 75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 TL 431 model SPICE Simulation Model tl 431 PDF

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: 75309P3, HUF75309D3, HUF75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75309P3, HUF75309D3, HUF75309D3S 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 PDF

    75309

    Abstract: No abstract text available
    Text: 75309P3, HUFA75309D3, HUFA75309D3S TM Data Sheet November 2000 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUFA75309P3, HUFA75309D3, HUFA75309D3S 75309 PDF

    75309P

    Abstract: No abstract text available
    Text: 75309P3, HUF75309D3, HUF75309D3S integri! D a ta S h e e t Ju n e 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power M O S F E Ts are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75309P3, HUF75309D3, HUF75309D3S por19A AN7254 AN7260. 75309P PDF

    75309P

    Abstract: 75309d AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 317E-10 431E-6
    Text: 75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75309P3, HUF75309D3, HUF75309D3S 43oducts 75309P 75309d AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 317E-10 431E-6 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: 75309P3, HUF75309D3, HUF75309D3S S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 17A, 55V • Ultra Low On-Resistance, rDS ON = 0.070Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		HUF75309P3, HUF75309D3, HUF75309D3S TB334, HUF75309 1-800-4-HARRIS 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 PDF

    Diode LT n5

    Abstract: No abstract text available
    Text: 75309P3, HUF75309D3, HUF75309D3S S em iconductor Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. " This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 Diode LT n5 PDF

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: 75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75309P3, HUF75309D3, HUF75309D3S 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 PDF

    75309p

    Abstract: HUFA75309D3 HUFA75309D3S HUFA75309D3ST HUFA75309P3 TB334
    Text: 75309P3, HUFA75309D3, HUFA75309D3S Data Sheet November 2000 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs Title UFA 309P These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUFA75309P3, HUFA75309D3, HUFA75309D3S 75309p HUFA75309D3 HUFA75309D3S HUFA75309D3ST HUFA75309P3 TB334 PDF

    75309P

    Abstract: AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3
    Text: 75309P3, HUF75309D3, HUF75309D3S S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 17A, 55V The HUF75309 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 1-800-4-HARRIS 75309P AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 PDF