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    75229P Search Results

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    75229P Price and Stock

    Rochester Electronics LLC HUF75229P3

    MOSFET N-CH 50V 44A TO220-3
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    DigiKey HUF75229P3 Tube 161,050 381
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    onsemi HUF75229P3

    MOSFET N-CH 50V 44A TO220-3
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    Fairchild Semiconductor Corporation HUF75229P3

    44A, 50V, N-Channel Power MOSFET, TO-220AB
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    Rochester Electronics HUF75229P3 161,050 1
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    Fairchild Semiconductor Corporation HUF75229P3_NL

    44A, 50V, N-Channel Power MOSFET, TO-220AB
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    Rochester Electronics HUF75229P3_NL 319 1
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    Fairchild Semiconductor Corporation HUF75229P

    Electronic Component
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    ComSIT USA HUF75229P 250
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    75229P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: H U 75229P3 h a r r is Ê S E M I C O N D U C T O R M M Ê Ê 44A, 50V, 0.022 Ohm, N-Channel, UltraFET Power MOSFET june 1998 Features UltmFliT • 44A, 50V Description m This N-Channel power MOS­ FET is manufactured using the innovative UltraFET process.


    OCR Scan     		F75229P3 1-800-4-HARRIS PDF

    75229P

    Abstract: 75229P transistor AN7254 AN9321 AN9322 HUFA75229P3 TB334 IDM44
    Text: 75229P3 Data Sheet November 2000 File Number 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET Features • Low On-Resistance, rDS ON = 0.022Ω ann This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		HUFA75229P3 75229P 75229P transistor AN7254 AN9321 AN9322 HUFA75229P3 TB334 IDM44 PDF

    75229p

    Abstract: 75229P transistor characteristics 75229P transistor AN7254 AN7260 AN9321 AN9322 HUF75229P3 TB334
    Text: 75229P3 Data Sheet December 2001 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HUF75229P3 75229p 75229P transistor characteristics 75229P transistor AN7254 AN7260 AN9321 AN9322 HUF75229P3 TB334 PDF

    75229P

    Abstract: characteristics 75229P transistor 75229P transistor AN7254 AN7260 AN9321 AN9322 HUF75229P3 TB334
    Text: 75229P3 Data Sheet June 1998 File Number 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HUF75229P3 453lopment. 75229P characteristics 75229P transistor 75229P transistor AN7254 AN7260 AN9321 AN9322 HUF75229P3 TB334 PDF

    75229P

    Abstract: 75229P transistor AN7254 AN9321 AN9322 HUFA75229P3 TB334
    Text: 75229P3 Data Sheet December 2001 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HUFA75229P3 75229P 75229P transistor AN7254 AN9321 AN9322 HUFA75229P3 TB334 PDF

    75229P

    Abstract: 75229P transistor characteristics 75229P transistor AN7254 AN7260 AN9321 AN9322 HUF75229P3 TB334
    Text: 75229P3 Data Sheet June 1998 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HUF75229P3 75229P 75229P transistor characteristics 75229P transistor AN7254 AN7260 AN9321 AN9322 HUF75229P3 TB334 PDF

    75229P

    Abstract: No abstract text available
    Text: 75229P3 TM Data Sheet November 2000 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		HUFA75229P3 75229P PDF