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    751R2 Search Results

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    751R2 Price and Stock

    Ohmite Mfg Co HS75-1R2-J

    RES CHAS MNT 1.2 OHMS 5% 75W
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    DigiKey HS75-1R2-J Bulk
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    RCD Components Inc 175-1R2-JTW

    RES 1.2 OHM 5% 10W AXIAL
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    DigiKey 175-1R2-JTW Reel 500
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    Avnet Americas 175-1R2-JTW Reel 500
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    RCD Components Inc 175-1R2-JBW

    RES 1.2 OHM 5% 10W AXIAL
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    DigiKey 175-1R2-JBW Bulk 25
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    Avnet Americas 175-1R2-JBW Bulk 25
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    • 1000 $1.771
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    Vishay Sfernice RMB0751R210FS14

    SFERNICE FIXED RESISTORS
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    DigiKey RMB0751R210FS14 Bag 100
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    Pulse Electronics Corporation BPSF001313751R2T00

    INDUCTOR POWER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BPSF001313751R2T00 Reel 350
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    Avnet Americas BPSF001313751R2T00 Reel 10 Weeks 350
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    Mouser Electronics BPSF001313751R2T00
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    Newark BPSF001313751R2T00 Reel 3,150
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    Sager BPSF001313751R2T00 350
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    751R2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT801R2cN

    Abstract: C 632 S1M
    Text: A D VA NC ED o POUER TECHNOLOGY b lE D • □ E 5 7 cì D Eì Q0GQ777 215 HAVP Advanced P o w er Tec h n o lo g y D sili O S POWER MOS IV APT801R2CN 751R2CN APT801R4CN APT751R4CN 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.20Q. 1.40Ì2 1.40Q


    OCR Scan
    Q0GQ777 APT801R2CN APT751R2CN APT801R4CN APT751R4CN 751R2CN 801R2CN 751R4GCN 801R4CN g-100 C 632 S1M PDF

    T3D DIODE

    Abstract: T3D 65 diode t3d 68 diode Diode T3D 24 T3D 89 DIODE T3D 36 diode T3D 28 diode Diode T3D 03 T3D 78 diode Diode T3D 26
    Text: SEMELAB PLC bOE Ô1331Ô7 DD0D622 Ibfl • S M L B D 4 MOS POWER EFFE T V i ■- '3 m i SML801R2CN 751R2CN SML801R4CN SML751R4CN SEM E LAB 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.2012 1.40Q 1.40Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan
    DD0D622 SML801R2CN SML751R2CN SML801R4CN SML751R4CN 751R2CN 801R2CN 751R4GCN 801R4CN O-254AA T3D DIODE T3D 65 diode t3d 68 diode Diode T3D 24 T3D 89 DIODE T3D 36 diode T3D 28 diode Diode T3D 03 T3D 78 diode Diode T3D 26 PDF

    801R4BN

    Abstract: 801R2BN APT801R2BN
    Text: o ADVANCED POW ER Te c h n o l o g y D Ô S POWER MOS IV® APT801R2BN 751R2BN APT801R4BN APT751R4BN 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.


    OCR Scan
    APT801R2BN APT751R2BN APT801R4BN APT751R4BN 801R2BN 751R4BN 751R2BN 801R4BN APT801R2/751R2/801R4/751R4BN 801R4BN APT801R2BN PDF

    801R2BN

    Abstract: APT801R2BN 801R4BN 801r2 APT751R2BN APT751R4BN APT801R4BN
    Text: o A D V A N CED R o w er Te c h n o l o g y D APT801R2BN 751R2BN APT801R4BN APT751R4BN Ô S POWER MOS IV« 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40a 1.40a N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tr = 25°C unless otherwise specified.


    OCR Scan
    APT801R2BN APT751R2BN APT801R4BN APT751R4BN 751R2BN 801R2BN 751R4BN 801R4BN 2/751R2/801R4/751R4BN O-247AD 801R4BN 801r2 APT751R2BN APT751R4BN PDF

    801R2AN

    Abstract: SML801R2AN SML751R2AN NC160 22G diode SML751R4AN SML801R4AN 801R4AN
    Text: SEMELÂB PLC bOE D fll331û? OGOG77fl 22G ISMLB MOS POWER à IN I SML801R2AN 751R2AN SML801R4AN SML751R4AN SEME LAB 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20Q 1.2011 1.40Q 1.40Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan
    OGOG77fl SML801R2AN SML751R2AN SML801R4AN SML751R4AN 751R2 801R2AN 751R4AN 801R4AN TQ-204AA) NC160 22G diode 801R4AN PDF

    SML801R4BN

    Abstract: SML751R2BN LE17 SML751R4BN SML801R2BN max2301 751R2BN h-12-H
    Text: INI SEMELAB PLC 6133107 bDE D OOOOfaSb ?6 T • S M L B _ MOS POWER E ^ E INI ä r T - l> ct - i S SEME SML801R2BN 751R2BN SML801R4BN SML751R4BN LAB 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Í2 1.20Í2 1.40Ü 1.40Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan
    T-39-IS SML801R2BN SML751R2BN SML801R4BN SML751R4BN 751R2BN 801R2EIN 751R4BN 801R4BN O-247AD LE17 max2301 h-12-H PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P OWE R TECHNOLOGY 41E D • 0 5 5 7 1 0 1 OOOQMflfi 35fl « A V P ■ R A d va n ced r J PO W ER T JviS Te c h n o lo g y APT801R2AN 751R2AN APT801R4AN APT751R4AN POWER MOS IV 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20 a 1.20 i2 1.40 ß 1.40 £2


    OCR Scan
    APT801R2AN APT751R2AN APT801R4AN APT751R4AN 751R2AN 801R2AN 751R4AN 801R4AN APT801R2/751R2/801R4/751R4AN 100mS PDF

    APT801R2AN

    Abstract: 801R4AN 801R2AN APT751R2AN APT751R4AN APT801R4AN 801r2
    Text: ADVANCED POWER TECHNOLOGY M ^E DESTEDT D OOOOMfl fl 35Ô • AVP A d va n c e d P o w er t j i - i s Te c h n o lo g y POWER MOS IV APT801R2AN 751R2AN APT801R4AN APT751R4AN 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20 1.20 1.40 1.40 £2 Í2 £2 Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan
    APT801R2AN APT751R2AN APT801R4AN APT751R4AN 751R2AN 801R2AN 751R4AN 801R4AN T0-204AA) 801R4AN 801r2 PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Tec h n o lo g y APT801R2BN 751R2BN APT801R4BN APT751R4BN POWER MOS IV« 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    APT801R2BN APT751R2BN APT801R4BN APT751R4BN 01R2BN APT801R2/751R2/801R4/751R4BN O-247AD PDF

    sml801

    Abstract: No abstract text available
    Text: INI SEMELAB 6133107 bDE D PLC OOOOfaSb ?6 T • S M L B _ MOS POWER E ^ E INI ä r T - l> ct - i S SEME SML801R2BN 751R2BN SML801R4BN SML751R4BN LAB 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Í2 1.20Í2 1.40Ü 1.40Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan
    SML801R2BN SML751R2BN SML801R4BN SML751R4BN 801R2EIN 751R4BN 751R2BN 801R4BN O-247AD sml801 PDF

    801r2dn

    Abstract: 5530DN 35M4 SML551R3DN 4520D SML902RDN 7516-D 5025DN 4065d SML5085DN
    Text: SEM E LA B PLC bOE J> • 0 1 3 3 10 7 □ □ □ 0 5 ‘iE 63^ ■ SHLB 'T - y\ - l ^ ELECTRICAL SPECIFICATIONS FOR SEMELAB MOS POWER 4 DICE MOS POWER DIE SIZE 104 199 X 204 MILS 4 9 / DIE PACK 105 290 X 250 (MILS) 2 5 /D IE PACK 106 254 X 414 (MILS) 6 0 /D IE


    OCR Scan
    1004RDN SML904RDN 802R4DN 752R4DN SML601R3DN SML551R3DN 49/DIE SML5085DN SML4585DN 4065DN 801r2dn 5530DN 35M4 4520D SML902RDN 7516-D 5025DN 4065d PDF

    801R2BN

    Abstract: APT801R2BN
    Text: A dvanced POW ER Te c h n o l o g y O D Ô APT801R2BN 751R2BN APT801R4BN APT751R4BN s ü í ’W tR MOS 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20í> 1.20Q 1.400 1.40<> N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Ail Ratings: T c = 25 C unless otherwise specified.


    OCR Scan
    APT801R2BN APT751R2BN APT801R4BN APT751R4BN 751R2BN 801R2BN 751R4BN 801R4BN APT801R 2/751R2/801R4/751R4BN PDF