74 LS 138 APPLICATIONS Search Results

Contextual Info: 138 AVG Semiconductors_ DDiT Technical Data DV74LS138 DV74ALS138 3 Line to 8 Line Decoder/Demultiplexer These Schottky-clamped circuits are designed to be used in high-performance memory-decoding or data-routing applications requiring very short propagation delay times. One of eight lines

2SC1593

Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Contextual Info: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is

64LS138

Contextual Info: S N 5 4 LS 13 8 , SN 54S138, S N 74 LS 13 8 , S N 74 S 13 8 A 3-LINE TO 8-LINE D EC OD ERS/DEM U LTIPLEXERS DECEMBER 1972 —REVISED MARCH 1988 Designed Specifically for High-Speed: Memory Decoders Data Transmission Systems I I 3 Enable Inputs to Simplify Cascading

al 232 nec

Abstract: NE64400 NE644 NE64408 S21E
Contextual Info: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors

351AL

Abstract: DSP811 74 LS 138 applications dps8l DPS 138
Contextual Info: DPS8 Series Pushwheel Switches, Mini, Rear Mount MATERIAL SPECIFICATIONS The DPS8 Series is a compact, lower cost family of instrument grade, pushbutton code switches for numerical input applications. DPS8 models are similar in size to those of the SMCD Series and

NE70083

Abstract: 2SK353 DS 3107 NE700 2sk mesfet 1S121 2sk 353
Contextual Info: N E C / CALIFORNIA 1SE NEC D fa427414 O G O l b S l 1 T - 3 1-2 5 " LOW NOISE Ku-K BAND GaAs MESFET NE700 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW C O S T The NE700 is a low cost GaAs FET featuring low noise figures and high associated gains thru 18 GHz.

2SC2340

Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Contextual Info: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

ZD75-0524

Abstract: ZT60-522 ZS-30 ZS150-36 Lambda Electronics zs50 lambda zs150-15 ZD30 zs30-12 ZD75-0512 zs150
Contextual Info: Port I —AC-to-PC Power Supplies LAMBDA'S AND Z SERIES Ideal For High Volume, Low Cost Office Automation Applications The requirements for reliability and cost effectiveness are no longer mutually exclusive in office automation, point of sale equipment and other high volume applications.

AURIX

Abstract: TC275T TC233LP-32F200 XC2289H XC2368E
Contextual Info: Microcontroller Pocket Guide www.infineon.com/microcontrollers N 1x USART, 1x SSC F, B, K F, B, K 1x USART Additional Features/ Additional Features/ Remarks Remarks N 1 1x USART PG-MQFP-80 OTP Packages 1 N Packages N N 1 Temperature Ranges Temperature Ranges

MRF5711L

Abstract: BF430L BF430
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5711L BF430L* The RF Line N P N Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in the high-gain, lo w -n oise sm all-sign al am plifiers for operation u p to 3.5 GHz. A ls o u sab le in applications requiring fast sw itching

2SC1253

Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for

NE41607

Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
Contextual Info: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e

2SK609

Abstract: 2SK609-06 2sk4060 IS22I2 NE701 NE71084 2SK6090 2SK406 NE71000 2SK406-08
Contextual Info: 1SE D E C/ C A L I F O R N I A NEC b427 414 0 Q D l b 2 7 B LOW NOISE Ku-K BAND GaAs MESFET NE710 SERIES FEATURES DESCRIPTION AND APPLICATIONS • VERY HIGH fMAX: 90 GHz The NE710 series features a low noise figure and high associ­ ated gain thru K-band by employing a recessed 0.3 micron

2SK571

Abstract: ne72089 ne72084 NE72000 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE720 NE7200
Contextual Info: NEC/ bM274m SbE D CALIFORNIA NEC OQOaa^D 3*^7 BINEC C T - 3 ,\- z £ GENERAL PURPOSE G aAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LO W C O S T Units in mm NE72000 (CHIP) (Units In pm) • LO W N O IS E PIQURE 100- • 0.8 dB at 4 GHz 1.7 dB at 8 GHz

Contextual Info: Applications H igh Slew R a te .30V//ys • Data A c q u is itio n System s • Fast S e ttlin g . 330ns • R.F. A m p lifie rs •

NE202

Abstract: NE20300 NE20383A
Contextual Info: E C/ C A L I F O R N I A NEC 1SE D b4E7414 ODOISTT 1 NE20300 NE20383A ULTRA LOW NOISE Ku-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES • L O W N O IS E F IG U R E 1.25 d B T Y P at f = 12 G H z NE20300 CHIP (Units in pm) • H IG H A S S O C IA T E D GAIN

Contextual Info: N-CHANNEL IGBT SGH40N60UFD FEATURES * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls

2SK280

Abstract: NE13783 NE13700 NE13783-4 NE13783S RF MESFET S parameters
Contextual Info: L N E C / 1SE D CALIFORNIA NEC • b427414 Q0G1SÖS 7^3h l S 1 LOW NOISE Ku-BAND G aAs MESFET NE13700 NE13783 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fMAx: 80 G H z The NE137 features low noise figure and high associated gain • L O W N O IS E F IG U R E

2SK609

Contextual Info: NEC NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m ax :90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0 .3 nm , W g = 2 8 0 jxm N+ CONTACT LAYER (Triple Epitaxial Technology PROVEN RELIABILITY AND STABILITY

NE243187

Abstract: NE243188
Contextual Info: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The

2SK609

Abstract: NE71084 NE71000M
Contextual Info: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: 90 GHz LOW NOISE FIGURE HIGH ASSOCIATED GAIN Lg s 0 .3 pm, Wg = 280 CD TJ o u. z jun N+ CONTACT LAYER Triple Epitaxial Technology O c S O 3 05

BK377

Contextual Info: VOLTAGE CONTROLLED OSCILLATORS Surface Mount LINEAR TUNING 12.5 to 3000 MHz ROS JTOS Typ. Typ. Typ. Typ. Max. Typ. V Nom. (mA) Max. Note B C O N N E C T I O N 0.03 0.06 0.15 0.6 0.8 0.02 0.04 0.11 0.2 0.3 1.0–4.0 2.0–2.6 2.8–4.0 3.7–4.8 5.8– 6.7

NE67383

Contextual Info: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 N O IS E F IG U R E A N D A S S O C IA T E D G A IN vs. FR E Q U E N C Y FEATURES VERY HIGH fMAX: 100 GHz LOW NOISE FIGURE 0.4 0.8 1.4 1.9 3.3 dB dB dB dB dB at at at at at

Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted