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    72BL Search Results

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    72BL Price and Stock

    Amphenol Piher JPEPL5272BL

    SHAFT PT15 FIG 1 WHITE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey JPEPL5272BL Bulk 1,958 1
    • 1 $0.44
    • 10 $0.244
    • 100 $0.1443
    • 1000 $0.09005
    • 10000 $0.06735
    Buy Now

    CnC Tech LLC 102-1072-BL-00200

    CBL USB2.0 A PLG-MCR A PLG 6.56'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 102-1072-BL-00200 Box 314 1
    • 1 $7.57
    • 10 $6.433
    • 100 $5.7418
    • 1000 $4.64816
    • 10000 $4.64816
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    CnC Tech LLC 102-1072-BL-00050

    CBL USB2.0 A PLG-MCR A PLG 1.64'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 102-1072-BL-00050 Box 293 1
    • 1 $6.32
    • 10 $5.37
    • 100 $4.5644
    • 1000 $4.02255
    • 10000 $3.61799
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    Coolgear Inc CM-100372BLBSTK

    2Ft Cat.8 S/FTP Ethernet Network
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CM-100372BLBSTK 198 1
    • 1 $8.24
    • 10 $7.42
    • 100 $6.59
    • 1000 $6.59
    • 10000 $6.59
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    CnC Tech LLC 102-1072-BL-00100

    CBL USB2.0 A PLG-MCR A PLG 3.28'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 102-1072-BL-00100 Box 175 1
    • 1 $6.95
    • 10 $5.904
    • 100 $5.2696
    • 1000 $4.26586
    • 10000 $4.26586
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    Bristol Electronics 102-1072-BL-00100 6
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    72BL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    72BL Unknown 72B, 72BL Series Original PDF

    72BL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    72B230L

    Abstract: 72BL 72B400L 72B75
    Text: z72B, 72BL Series Nominal Nominal impulse impulse discharge discharge current current 8/20 μ s 10/1000μ μs idi idi KA (A) Nominal Alternating discharge current at 50Hz, 1s ida (A) Nominal dc spark-over voltage Gas Discharge Tube dc spark-over voltage


    Original
    8/20s 10/1000s 72B75/L 72B90/L 72B150/L 72B230/L 72B250/L 72B300/L 72B350/L 72B400/L 72B230L 72BL 72B400L 72B75 PDF

    Untitled

    Abstract: No abstract text available
    Text: IME D INTEGRATED DEVICE • 4Ö2S771 0003^22 1 ■ 16-BIT CMOS ERROR DETECTION AND CORRECTION UNIT MICROSLICE PRODUCT FEATURES: • • ■ T -¥ £ -/7 Pin-compatible to all versions of the 2960 • Military product available compliant to MIL-STD-883, Class B


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    2S771 16-BIT MIL-STD-883, 100mA IDT39C60 39C60-1 39C60A 39C60B IDT39C60A: IDT39C60B: PDF

    82441fx

    Abstract: No abstract text available
    Text: PRELIMINARY intel INTEL 440FX PCISET 82441FX PCI AND MEMORY CONTROLLER PMC AND 82442FX DATA BUS ACCELERATOR (DBX) Supports the Pentium Pro Processors at Bus Frequencies Up To 66 Mhz — Supports 32-Bit Addressing — Optimized in-Order and Request Queue


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    440FX 82441FX 82442FX 32-Bit 64/72-Bit x-222 PDF

    57210

    Abstract: No abstract text available
    Text: •HYUNDAI HYM572103 N-Series 1M X 72-blt CMOS DRAM MODULE DESCRIPTION The HYM572103 is a 1M x 72-bit Fast page m ode CMOS DRAM m odule consisting of sixteen HY514400A in 20/26 pin SOJ o r TSOP-II tw o HY514403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on


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    HYM572103 72-blt 72-bit HY514400A HY514403B 16-bit HYM572103NG/TNG/LMG/LTMG 121mW 209mW 57210 PDF

    PJ 52

    Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
    Text: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


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    DM1M64DT6/DM1M72DT6 DM1M72DT6 72-blt PJ 52 U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218 PDF

    Untitled

    Abstract: No abstract text available
    Text: T T ir r \| EDI2AG272129V 2 Megabyte Sync/Sync Burst, Small OlitHne DIMM e l e c t r o n i c DEsiGNa i n c ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x128K x72 S ynchronous, S ynchronous Burst The EDI2AG272129VxxD1 is a S ynchronous/S ynchro­


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    EDI2AG272129V 2x128Kx72, 2x128K EDI2AG272129VxxD1 2x128Kx72. 14mmx20mm 2x128Kx72 EDI2AG272129V PDF

    80A230

    Abstract: 80A470 80A75 C80AL y1500 80A350 80A400
    Text: A Series 80 Nominal Nominal Nominal impulse impulse Alternating Insulation Capacitance discharge discharge discharge at 1kHz current current 10/1000 current at resistance 8/20 s μs 50Hz, 1s Nominal dc spark-over voltage Gas Discharge Tube dc spark-over


    Original
    8/20s 00V/s 80A75 80A90 80A150 80A230 80A250 80A300 80A350 C80ALN 80A230 80A470 80A75 C80AL y1500 80A350 80A400 PDF

    EDI2CG272128V

    Abstract: No abstract text available
    Text: ^EDI EDI2CG272128V 2 Megabyte Sync/Sync Burst, Small Outline DIMM ELECTRONIC DESIGNS, IN C ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x128K x72 Synchronous, S ynchronous Burst The EDI2CG272128VxxD1 is a S ynchronous/S ynchro­ Flow-Through A rchitecture


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    ED12CG272128V 2x128Kx72 2x128Kx72, EDI2CG272128V9D1* EDI2CG272128V10D1 EDI2CG272128V12D1 11MMMMMI111MMI1MII EDI2CG272128V PDF

    Hyundai DBS

    Abstract: No abstract text available
    Text: •«HYUNDAI HYM572A414A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting of eighteen HY5117404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 |iF and 0.01 ^F


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    HYM572A414A 72-bit HY5117404A HYM572A414AKG/ATKG/ASLKG/ASLTKG DQ0-DQ71) 1EC07-10-JAN98 621HS Hyundai DBS PDF

    ESI 2160

    Abstract: u332 U11B2 cqx 87 u918
    Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


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    DM512K64D 6/DM512K720T6MultibankEDO 512Kb DM512K72DT6-12 72-blt ESI 2160 u332 U11B2 cqx 87 u918 PDF

    Untitled

    Abstract: No abstract text available
    Text: m EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS. IN C ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x128K x72 Synchronous, S ynchronous Burst • Flow-Through A rchitecture • Linear and Sequential Burst Support via MODE pin


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    EDI2CG27264V 2x128Kx72 2x128Kx72, EDI2CG27264V85D1 2x64Kx72 EDI2CG27264V9D1* EDI2CG27264V10D1 EDI2CG27264V12D1 PDF

    LH Research

    Abstract: No abstract text available
    Text: EDI2AG27264V 1 Megabyte Sync/Sync Burst, SfTISlI O utline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64Kx72 Synchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro­ Flow-Through A rchitecture


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    EDI2AG27264V 2x64Kx72 2x64Kx72, EDI22AG27264V85D1 EDI22AG27264V9D1 EDI22AG27264V10D1 EDI22AG27264V12D1 LH Research PDF

    EDI2AG272129V

    Abstract: ADNA
    Text: EDI2A G272129V 2 Megabyte Sync/Sync Burst, Small Outline DIMM e le c t r o n ic d esig n & in c ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x128K x72 S ynchronous, S ynchronous Burst The EDI2AG272129VxxD1 is a S ynchronous/S ynchro­


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    G272129V 2x128Kx72 2x128Kx72, EDI2CG472256V10D1 EDI2CG472256V12D1 EDI2AG272129V ADNA PDF

    72BL

    Abstract: 16s72
    Text: MH16S72AAMU -8 1207959552-BIT 16777216 - WORD BY 72-BIT SynchronousDRAM DESCRIPTION Tile MH16S72AAMD is 16777216 - word by 72-bit Synchronous DRAM module. This consists of eighteen industry standard SMx8 Synchronous DRAMs in TSOP and one industory standard


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    MH16S72AAMU 1207959552-BIT 72-BIT MH16S72AAMD 85pin 94pin 10pin 95pin 100MHz 72BL 16s72 PDF

    Untitled

    Abstract: No abstract text available
    Text: m u EDI2CG272128V 2 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS. IN C ADVANCED 2x128Kx72, 3.3V Module Features • Sync/Sync Burst Flow-Through 2x128K x72 Synchronous, S ynchronous Burst The EDI2CG272128VxxD1 is a S ynchronous/S ynchro­


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    EDI2CG272128V 2x128Kx72, 2x128K EDI2CG272128VxxD1 14mmx20mm C128V10D1 2x128Kx72 EDI2CG272128V12D1 EDI2CG272128V PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2AG27265V 1 Megabyte Sync/Sync Burst, ^ m S m a l l Outline DIMM ELECTRONIC DESIGNS, IN C A DVANCED 2x64Kx72, 3.3V Module Features Sync/Sync B urst Flow-Through • 2x64kx72 S ynchronous, S ynchronous Burst • Flow-Through A rchitecture • Sequential B urst MODE


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    EDI2AG27265V 2x64Kx72, 2x64kx72 2x64Kx72. EDI2AG27265VxxD1 2x64K 7265V PDF

    Untitled

    Abstract: No abstract text available
    Text: brooktree b3E J> m 1L455TS 0007215 SOD corp Interface Specification IS-360.21 T - l P rim ary R ate Fram er Part # UGA-360 M arch, 1993 Brooktree Brooktree Corporation 9950 Barnes Canyon Road San Diego, CA 92121 USA 619-452-7580 619-452-1249 fax 383596 (telex)


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    1L455TS IS-360 UGA-360 000730b 5M-1982. UGA-360-v, PDF

    Untitled

    Abstract: No abstract text available
    Text: T T ir r \| K n A I“ 1 1 EDI2AG27264V 1Megabyte Sync/Sync Burst, Small Outline DIMM e le c t r o n ic d esig n & in c ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64K x72 S ynchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro­


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    EDI2AG27264V 2x64Kx72, 2x64K EDI22AG27264V10D1 EDI22AG27264V12D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: D R A W IN G MADC IN A M t f i i C A N 1 PR O JE C TIO N v£; 1970 ay amp itvca^FtowATED . a l l rig h ts reserved . amp AND OR PATENTS PENDING. 4 o rÄ P ^ C O B P O B A T E O . APPR O VI [ NP370-OU3 Retz $ 7 0 -0 8 i s ffe V tfi3*' /2-8'7e & f,vA6 A - PL.Vi ¿’¿.I


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    NP370-OU3 -S242CM 72BLC PDF

    LH Research mm

    Abstract: LH Research
    Text: M D EDI2AG27265V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS, IN C ADVANCED 2x64Kx72, 3.3V I Module Features Sync/Sync Burst Flow-Through ♦ 2x64kx72 S ynchronous, S ynchronous Burst The EDI2AG27265VxxD1 is a S ynchronous/S ynchro­


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    EDI2AG27265V 2x64kx72 2x64Kx72, T265V85D1 144SO-DIMM EDI2AG27265V9D1 EDI2AG27265V10D1 LH Research mm LH Research PDF

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


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    Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor PDF

    ICC01

    Abstract: ICC01-400B5 capacitor discharge ignition use ic in capacitor discharge ignition E3 st
    Text: £ = 7 SG S-T H O M SO N ^ 7 # MûfômilSraiMIICl_ ICC01-400B5 Application Specific Discretes A.S.D. IGNITION CONTROL CIRCUIT FEATURES AND BENEFITS • MONOLITHIC CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL. ■ DEDICATED THYRISTOR STRUCTURE FOR


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    ICC01-400B5 ICC01 GGb72b5 ICC01-400B5 capacitor discharge ignition use ic in capacitor discharge ignition E3 st PDF