HBT 01 - 01G
Abstract: DG20
Text: • O K I Semiconductor MSC23T/PV2720A-xxBS9 2,097,152-W ord x 72-B it DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/DV2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SO]
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MSC23T/PV2720A-XXBS9
152-Word
72-Bit
MSC23T/DV2720A-xxBS9
16-Mb
168-pin
72-bit
HBT 01 - 01G
DG20
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LMN 317
Abstract: BT 1610 digital volume control lg crt tv circuit diagram MSM6895 MSM6896 phenom 1090
Text: O K I Semiconductor MSM6895/6896 M u lti-F u n ctio n P C M C O D E C G E N E R A L D ESC R IP T IO N The MSM6895/MSM6896, developed especially for low -pow er an d m ulti-function applications in ISDN telephone term inals, are single +5 V pow er supply CODEC LSI devices. The devices
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MSM6895/MSM6896
MSM6895/MSM6896,
002157b
LMN 317
BT 1610 digital volume control
lg crt tv circuit diagram
MSM6895
MSM6896
phenom 1090
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Untitled
Abstract: No abstract text available
Text: K I SEMICONDUCTOR GROUP S3E D • b?24E40 O K I semiconductor MSC7125-XX OODbST? T-SZ-13>-0°I 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-XX is a BiCMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-XX drives displays with up to 8 grids with 35 anodes dots plus 5 annunciators. The
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24E40
MSC7125-XX
MSC7125-XX
16-bit
b724240
T-52-13-09
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Untitled
Abstract: No abstract text available
Text: OKI semiconductor MSM8 0 C3 1 F/MSM8 0 C5 1 F CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51 F m icrocontroller is a low power, high performance 8-bit single component device implemented in O KI's silicon gate complem entary metaf oxide sem iconductor
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80C31F/M
80C51
MSM80C51F
16-bit
b72M5M0
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Untitled
Abstract: No abstract text available
Text: OKI electronic components O C360 PHOTO COUPLER GEN ERA L DESCRIPTION The OC360 is a photocoupler formed by combining a GaAs infrared light emitting diode and a phototransistor into a two-channel configuration. Encased in an 8-pin plastic package, the CXZ360 is
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OC360
CXZ360
E86831
OC360
24B40
L724240
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M5117405
Abstract: msm5117405a Q020G m51174
Text: O K I Semiconductor_ MSM5 1 174 05 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION T he M SM 5117405A is a4,194,304-word x 4-bit d yn am ic R A M fab ricated in O K I’s C M O S silico n gate technology. The M SM 5117405A ach ieves h ig h in teg ratio n , high-speed operatio n, and low -pow er
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MSM5117405A_
304-Word
MSM5117405A
26/24-pin
cycles/32
M5117405
Q020G
m51174
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MSM7507-01
Abstract: MSM7507-01GS-VK MSM7507-02 MSM7507-03 MSM7508B MSM7509B
Text: O K I Semiconductor MSM7507-01702/03 Single Rail CODEC GENERAL DESCRIPTION T he MSM7507 is a single-channel COD EC CM O S IC for v oice sig n als ran g in g from 300 to 3400 H z w ith filters for A /D a n d D /A conversion. D esigned especially for a sin g le-p o w er su p p ly a n d lo w -p o w er ap p licatio n s, th e device is
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MSM7507-01702/MSM7507-01703
MSM7507
MSM7508B
MSM7509B.
b7242M0
MSM7507-01
MSM7507-01GS-VK
MSM7507-02
MSM7507-03
MSM7509B
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5141OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.
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MSM5141OOB/BL
304-Word
MSM514100B/BL
cycles/16ms,
cycles/128ms
MSM514100B/BL
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514100A
Abstract: No abstract text available
Text: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated
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MSM6691
MSM6691
theMSM6388,
andtheMSM6588.
TheMSM6691
MSM6388
MSM6588
16-bit
1100A
11001A)
514100A
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor_ MSM5 1 2 8 0 5 A_ 262,144-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM512805A is a 262,144-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM512805A achieves high integration, high-speed operation, and low-power
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MSM512805A_
144-Word
MSM512805A
26/24-pin
512cycles/8ms
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m65512
Abstract: MSM65512 circuit diagram cr-p2 65p512 MSM65512 MSM65P512 AD0P07 M-6551
Text: O K I Semiconductor MSM65512 /65 P512 Oki Original High Perform ance C M O S 8-Bit Microcontroller GEN ERAL DESCRIPTION The MSM65512 is a high-performance 8-bit microcontroller that employs Oki's original nX-8/50 CPU core. With a minimum instruction execution time of 400 ns 10MHz clock , the MSM65512 is
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MSM65512/65P512
MSM65512
nX-8/50
10MHz
MSM65P512,
Se512/65P512
D23S44
M65512/65P512
DD23545
m65512
MSM65512 circuit diagram
cr-p2
65p512
MSM65P512
AD0P07
M-6551
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D010
Abstract: OLD234 910nm
Text: O K I electronic com ponents OLP234 GaAIAs Infrared Light Emitting Diode G E N E R A L D ESC R IPT IO N The OLD234 is a high-output GaAIAs infrared light em ission micro-diode sealed w ith a transparent epoxy resin in a TO-46 case. Its light em ission w ave peaks at 910 nm.
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OLD234
OLD234
72424D
754E40
Ifm/100
b724240
001fifl72
D010
910nm
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OCM 1X0, 1X1 SERIES Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM1X1 Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS
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10-mA
Pfl140/1
b7E4240
b7242L
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B72L
Abstract: No abstract text available
Text: O K I Semiconductor MSM66P54-01702/03/04 MSM6650 family 1 Mbit OTP Built-in Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM66P54 is a single-chip CMOS speech synthesis LSI that has an on-chip OTP One Time PROM for speech data storage. This LSI is the OTP version for on-chip mask ROMs from the
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MSM66P54-01702/03/04
MSM6650
MSM66P54
MSM6652
MSM6656.
12bit
40dB/oct
AR76-202.
B72L
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM532030B 131,072-Word x 16-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM532030B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 16-bit capacity. The MSM532030B operates on a single 3.0 V or 3.3 V power supply but offers the same fast access times
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MSM532030B
072-Word
16-Bit
MSM532030B
MSM532020B
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Untitled
Abstract: No abstract text available
Text: O K I electronic components T36CP2, T36CP3, T54LCP Photo capsule GENERAL DESCRIPTION The T36CP2/T36CP3/T54LCP are sensors that are most suited to paper detection. For superior dustproof packaging and easy mounting, a phototransistor can be sealed encapsulated into a
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T36CP2,
T36CP3,
T54LCP
T36CP2/T36CP3/T54LCP
T36CP2
b724H40
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l6d sensor
Abstract: MSM64164C almat P32CO
Text: O K I S e m iœ n d u c t o r M S M 6 4 1 6 4 C 4 -B it, S in g le -C h ip M ic ro c o n tro lle r D E S C R IP T IO N The MSM64164C is a high-performance CMOS 4-bit, single-chip microcontroller that has a built-in 256nibble RAM, 20 I/O ports, a buzzer output, a serial port, a 2-channel RC oscillation type A /D converter,
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MSM64164C
MSM64164C
256-nibble
L72M240
l6d sensor
almat
P32CO
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MSM411001-10RS
Abstract: MSM411001-12RS
Text: O K I S EM I CO ND U CT OR GROUP ûi 6724240 0 K I SEM IC O N D U C TO R GROUP _ O K I D É b754S4D □OOSSTS 3 89D 0 2 5 9 2 D 7 - V i -¿ > 3 - / s ' _ semiconductor MSM4 1 1 0 0 1 RS_ 1,048,576-BIT DYNAMIC RANDOM ACCESS MEMORY < Nibble Mode Type >
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b754S4D
MSM411001
576-BIT
MSM411001-10RS
MSM411001-12RS
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65P524
Abstract: SFT 352 0040H MSM65524 MSM65P524 TI OAE
Text: S fiE D • b 7 2 4 2 4 U □ □ 1 3 Ì B 7 Û4 3 I ■ O K I J O K I semiconductor MSM65524/65P524 0 K 1 SEMICONDUCTOR OKI'S ORIGINAL nX HIGH PERFORMANCE CMOS 8 BIT SINGLE CHIP MICROCONTROLLER G EN ER A L DESCRIPTION MSM65524 is a high-perform ance 8-bit single-chip controller th at employs Oki's original nX-8/50
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b72424D
13TB7
MSM65524/65P524
MSM65524
nX-8/50
10MHz
MSM65P524,
E424D
65P524
SFT 352
0040H
MSM65P524
TI OAE
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FST 460 transistor
Abstract: 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 MSM6258
Text: O K I Semiconductor ISM6258/MSM6258V ADPCM S P E E C H P R O C E S S O R FO R SO LID ST A T E R E C O R D E R TO C U S T O M ER S FO R NEW C IR C U IT DESIGN For a new circuit design, it is recommended to use not the M SM 6258, but the M SM 6388/ M SM 6588 as described later.
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ISM6258/MSM6258V
6388/M
12-bit
MSM6258
MSM6588.
7542M0
MSM6258/MSM6258V
MSM80C85
b7E4240
FST 460 transistor
80c85
UTM RESISTOR 210-9
sc2305
Transistor FST 461
QFP44-P-910-V1K
Transistor FST 460
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L72424D
Abstract: automatic meter reading "Optical Coupler" ocm220
Text: O K I electronic components OCM 2X0, 2X1 SERIES Bidirectional Optical M O S Relay G EN ER A L D ESC R IP T IO N The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS
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10-mA
b724240
OCft/1240/241
L72424D
11DS4
L724240
L72424D
automatic meter reading
"Optical Coupler"
ocm220
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5116100
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit D YN AM IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116100 is a new generation dynam ic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.
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MSM5116100
216-Word
MSM5116100
cycles/64ms
CA100
2H240
b724240
5116100
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MSM51V16100
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 V16100 _ 16,777,216-W ord x 1 -B it DYN AM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V16100 is OKI's CMOS silicon gate process technology.
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MSM51V16100_
216-Word
MSM51V16100
cycles/64ms
MSM51V16100
b724240
001fl35b
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SGCT
Abstract: sGCT function IC 741 amp 85to D021 MSM7586-01 MSM7586-01TS-K OD21A AVR QPSK utc8
Text: O K I Semiconductor MSM7586-01 71/4 Shift QPSK MODEM/ADPCM CODEC GENERAL DESCRIPTION The MSM7586 is a CMOS IC developed for use w ith digital cordless telephones. The device provides a ti/ 4 shift QPSK m odem function and a CODEC function w hich perform s transcoding
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MSM7586-01
MSM7586
SGCT
sGCT function
IC 741 amp
85to
D021
MSM7586-01
MSM7586-01TS-K
OD21A
AVR QPSK
utc8
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