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    7236 DIODE Search Results

    7236 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    7236 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6839 "direct replacement"

    Abstract: 7238 diode diode 7236 387 "direct replacement" Direct Replacement 510-5X 510-28X diode led specs base incandescent
    Text: Brilliance by design SloanLED TM www.SloanLED.com LED Direct Replacement for Flange Base Incandescent Lamp Models 311 & 510 MODEL 311 This T-1 based LED is designed to offer diode reliability as a replacement unit in T-1 hardware. FEATURES • Low power consumption


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    PDF 12vdc 311-2X 311-3X 311-5X 311-12X 14vdc 24vdc 28vdc 510-5X 6839 "direct replacement" 7238 diode diode 7236 387 "direct replacement" Direct Replacement 510-5X 510-28X diode led specs base incandescent

    RELAY RM2 TR1

    Abstract: SMD Transistor z6 24v vogt transformer rm5 capacitor smd transistor z4 220n 400V capacitor MKT MKT 22K transistor smd z3 vogt T4 vogt t6
    Text: Bill of Materials T-SMINTO Q/T SMINTO Evaluationboard Revised: Thursday, March 29, 2001 Top Sheet by R. Froese Revision: 1.0a Infineon Technologies AG COM A1 AE Balanstr. 73 - 81541 Munich - Germany Bill Of Materials Item March 29,2001 Quantity Reference 18:27:32


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    PDF T23A230 Q69-X8743 VAC5024-X006 SMD08 N5024-X006 SMD0805 22nF/50V, SMD0805; 100nF/50V, B45196-E122. RELAY RM2 TR1 SMD Transistor z6 24v vogt transformer rm5 capacitor smd transistor z4 220n 400V capacitor MKT MKT 22K transistor smd z3 vogt T4 vogt t6

    capacitor 100N 63V 2u2

    Abstract: capacitor mkt 100nf 400v vogt t6 RELAY RM2 TR1 MKT .22K CAP TAJA vogt T4 vac5024 t4 sot23 diode r60 mkt
    Text: Bill of Materials Q-SMINTO Q/T SMINTO Evaluationboard Revised: Thursday, March 29, 2001 Top Sheet by R. Froese Revision: 1.0a Infineon Technologies AG COM A1 AE Balanstr. 73 - 81541 Munich - Germany Bill Of Materials Item March 29,2001 Quantity Reference 18:27:32


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    PDF T23A230 Q69-X8743 VAC5024-X006 SMD08 N5024-X006 SMD0805 22nF/50V, SMD0805; 100nF/50V, B45196-E122. capacitor 100N 63V 2u2 capacitor mkt 100nf 400v vogt t6 RELAY RM2 TR1 MKT .22K CAP TAJA vogt T4 vac5024 t4 sot23 diode r60 mkt

    Untitled

    Abstract: No abstract text available
    Text: PGR 203 14 Optical Receiver Submodule for 2.5 Gbps DATA FIBER PREAMP APD Key Features • • • • • • • Applications • • • • 60 SDH STM-16 LH SONET OC-48 LR Digital receivers to 2.5 Gbps Analog receivers to 1.7 GHz Pin connection 1. GND 2.


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    PDF STM-16 OC-48 1522-PGR

    2N7236

    Abstract: M6554 mosfet K 1377 IRFM9140 transistor 3et 2sc 1740 transistor 2SC 1384
    Text: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL IRFM914Q 2N 7236 JANS2IM7236 JAIMTX2N723G JANTXV2N7236 R -100 Volt, 0.20 Ohm HEXFET The HEXFET® technology is the key to International


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    PDF IRFM914Q MIL-S-19500/59B] IRFM9140D IRFM9140U O-254 MIL-S-19500 43S54S2 2N7236 M6554 mosfet K 1377 IRFM9140 transistor 3et 2sc 1740 transistor 2SC 1384

    2N7236 JANTX

    Abstract: 2N7236 mosfet K 1377
    Text: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM914Q 2N 7236 JANS2N7236 JANTX2N7236 JANTXV2N7236 [REF: M IL-S-1S500/5S5] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International


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    PDF IRFM914Q JANS2N7236 JANTX2N7236 JANTXV2N7236 IL-S-1S500/5S5] ap142) IRFM9140D IRFM9140U O-254 S-19500 2N7236 JANTX 2N7236 mosfet K 1377

    Untitled

    Abstract: No abstract text available
    Text: 79-7236; Rev 0; 6/97 EVfrLu ^ '0 « K'T pXtàLftBLE _ Low-Power, 90Msps, Dual 6-Bit ADC The MAX1003 input amplifiers feature true differential inputs, a -0.5dB analog bandwidth of 55MHz, and userprogrammable input full-scale ranges of 125mVp-p, 250mVp-p, or 500mVp-p. With an AC-coupled input


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    PDF 90Msps, MAX1003 55MHz, 125mVp-p, 250mVp-p, 500mVp-p. 20MHz 50MHz 36-pin

    TR-NWT-000468

    Abstract: No abstract text available
    Text: PGR 1 1 1 0 C o m p a c t PIN Recei ve r T his compact PIN ras va' issued a lly diteci for FITL F ite In The Loop and amilar diort and medium haul tdaxm applications Themoduleindud&alnGaAsPIN diode and i soptimized far -40 to + 85 °C op#ation. F eatures


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    PDF 1110/R TR-NWT-000468

    diode E 1110

    Abstract: pgr 1110 e 1110 diode
    Text: PGR 1110 Compact PIN Receiver This compact P IN receiver is especially suited for F IT L Fiber In The Loop and similar short and medium haul telecom applications. The module includes a InGaAs PIN diode and is optimizedfor -40 to + 85 °C operation. PGR 1110/R


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    PDF 1110/R Fib83 diode E 1110 pgr 1110 e 1110 diode

    DIODE T25 4

    Abstract: DIODE T25 DIODE T25 4 C
    Text: PGT 21 20 C o m p a c t Laser Transmitter T his compact 1300 nmlaaar tranarttto' is&cpeaallyajited for FITL Fibe' In T he Lap and àmilar dicrt and medium haul té earn applications T he module indudes a Buried HàercàrudurelnGaAs/lnP FabryPerd laser diode and InGaAsPIN back faetì


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    PDF 2120/3R DIODE T25 4 DIODE T25 DIODE T25 4 C

    diode 7236

    Abstract: 7236 diode p type laser diode
    Text: PGT 2120 Compact Laser Transmitter This compact 1300 nm laser transmitter is expecially suited for F IT L Fiber In The Loop and similar short and medium haul telecom applications. The module includes a Buried Heterostructure InGaAs/lnP Fabry Perot laser diode and InGaAs P IN back facet


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    PDF T2120 diode 7236 7236 diode p type laser diode

    4621 OPTO

    Abstract: No abstract text available
    Text: PGR 201 06 Optical Receiver Submodule for 2.5 Gbps Features • Hermetic, 14 pin butterfly package with multisourced footprint • Single-mode fiber pigtail • FC/PC, SC or ST connector • InGaAs avalanche photo diode, APD, with low noise GaAs MMIC preamplifier


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    PDF STM-16 OC-48 1522-PGR 4621 OPTO

    ITE 8987

    Abstract: 1N736 1N736A 1N4131 ITE 8985
    Text: Zener Regulator Diodes P art Num ber i M icro sem i I: P ack a g e D ivision I O utline Type Mil Spec Micmsemi P o w er, V z Data Sh e e t ID W I (V) Izt I (mA) I 1N735 (D 07) 1N735A 1N735A |D 0 7 ) 1N4131 1N4131 (D 035) JAN1N4131 JAN1N4131-1 JAN1N4131UR-1


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    PDF 1N735 1N735A 1N735A 1N4131 1N4131 JAN1N4131 JAN1N4131-1 JAN1N4131UR-1 JANTX1N4131 JANTX1N4131-1 ITE 8987 1N736 1N736A ITE 8985

    NEC Vacuum Fluorescent Display

    Abstract: Seven-Segment Vacuum Fluorescent Display Vacuum Fluorescent Displays nec fluorescent display driver Vacuum-Fluorescent Display nec ICM7207 ICM7236 ICM7236IPL ICWI7236 vacuumfluorescent
    Text: OIfflEÜm ICWI7236 4 Va Digit Counter With Vacuum Fluorescent Static Display Drivers FEATURES DESCRIPTION • High frequency counting — guaranteed 15MHz, typically 25MHz at 5V The ICM7236 and ICM7236A devices are high-performance CMOS 4V2 digit counters, including decoders, output


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    PDF ICWI7236 15MHz, 25MHz 100/xW ICM7236 NEC Vacuum Fluorescent Display Seven-Segment Vacuum Fluorescent Display Vacuum Fluorescent Displays nec fluorescent display driver Vacuum-Fluorescent Display nec ICM7207 ICM7236 ICM7236IPL ICWI7236 vacuumfluorescent

    TERMISTOR 301

    Abstract: laser diode stm64 laser DFB 1300 rise 90 ps TA-TSY-000983
    Text: PGT 201 10 Optical Transmitter Submodule for 10 Gbps Preliminary The transmitter module, intended for 0C192/STM-64 applications, consists of a DFB laser with integrated absorpton modulator mounted in a high-speed package including isolator. Features • •


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    PDF 0C192/STM-64 STM-64 C-192 1522-PGT TERMISTOR 301 laser diode stm64 laser DFB 1300 rise 90 ps TA-TSY-000983

    Untitled

    Abstract: No abstract text available
    Text: PGT 201 08 1510 nm DFB Laser The P G T 2 0 1 0 8 laser module with a 1510 nm laser sourse ts intended as a sourse for an optical supervisory channel for systems with line-in amplifiers as proposed by IT U -T in G .691 and G692. The module includes a InGaAs/lnP D F B


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    D 2604

    Abstract: TA-TSY-000983
    Text: PGT 201 03 Optical Transmitter Submodule for 2.5 Gbps The transmitter module, intended for dispersion limited applications at OC-48/ STM -16. consists of a DFB laser with integrated absorption modulator mounted in a high-speedpackage including isolator. Features


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    PDF OC-48/ STM-16 OC-48 1522-PG D 2604 TA-TSY-000983

    TA-TSY-000983

    Abstract: No abstract text available
    Text: PGT 201 02 Optical Transmitter Submodule for 2.5 Gbps The transmitter module, intendedfor WDM applications at 0C-48!STM-16, consists of a DFB laser with integrated absorption modulator mounted in a high speed package including isolator. Features • • •


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    PDF 0C-48 STM-16, 1522-PGT TA-TSY-000983

    Untitled

    Abstract: No abstract text available
    Text: PGE 608 11 WDM Gain-Block The WDMgain-block is intended to be used as a pre-amplifier in WDM networks. It provides both input and outputpower monitor signals. The input and output ports have isolators to attenuate spurious reflections in the system. External electronic circuitry


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    PDF 16pins 1522-PGE

    edfa booster

    Abstract: 1550 nm pump laser EDFA GE608
    Text: PGE 608 12 WDM Gain-Block The WDMgain-block is intended to be used as a booster amplifier in WDM networks. It provides both input and outputpower monitor signals. The input and output ports have isolators to attenuate spurious reflections in the system. External electronic circuitry


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    PDF 16pins 522-PGE edfa booster 1550 nm pump laser EDFA GE608

    Untitled

    Abstract: No abstract text available
    Text: PGT 201 04 Optical Transmitter Submodule for 2.5 Gbps The transmitter module, intended for W DM applications at OC-48/STM -16, consists of a DFB laser with integrated absorption modulator mounted in a high speed package including isolator. Features • 1.55 Jm DFB C W source m onolithicly integrated w ith an


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    PDF OC-48/STM 1522-PGT

    diode t25 4 fo

    Abstract: No abstract text available
    Text: PGT 201 20 1510 nm DFB Laser The P G T 201 2 0 laser module with a 1510 nm laser sourse is intended as a sourse for an optical supervisory channel for systems with line-in amplifiers as proposed by IT U -T in G .691 and G692. The module includes a InGaAs/InP D F B


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    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP0350 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV dgs -500V Order Number / Package max W n) (min) TO-3 TO-220 Die* 7.5Î2 -1 A VP0350N1 VP0350N5 VP0350ND f*DS(ON) t M IL visual s creen in g a va ila b le Advanced DMOS Technology


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    PDF VP0350 VP0350N1 O-220 VP0350N5 VP0350ND -500V

    1550 nm pump laser EDFA

    Abstract: No abstract text available
    Text: PGE 608 13 WDM Gain-Block The WDMgain-block is intended to be used as a booster amplifier in WDM networks. It provides both input and outputpower monitor signals. The amplifier provides a soft-failure mode by means o f double pump lasers. The input and output ports have isolators to


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    PDF noisefigure00 1522-PGE 1550 nm pump laser EDFA