Untitled
Abstract: No abstract text available
Text: • M655452 OOlblSM Sb2 ■ INR HEXFRED Other Products From IR INTERNATIONAL RECTIFIER bSE II Ultra-Fast Soft Recovery Part Number VRW M iF Typ @ 95<'c (V) V FM @ Ir @ Typ Typ 'F(T»P) VRWM RthJC ■ rrm Irr (nS) <A) (V) mA • c /w (A) HFA0BTB60 8 1.7 5
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M655452
HFA0BTB60
HFA15TB60
HFA25TB60
HFA16TA60C
HFA30TA60C
15/leg
T0-220
HFA15PB60
HFA25PB60
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Untitled
Abstract: No abstract text available
Text: M655452 International IOR]Rectifier DDlSb70 352 • PD-9.703A IRFR214 IRFU214 HEXFET Power M O SFET • • • • • • • INR Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching
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M655452
DDlSb70
IRFR214
IRFU214
IRFR214)
IRFU214)
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RECTIFIER DIODE D135
Abstract: No abstract text available
Text: Bulletin 12085/A htemational S Rectifier sd 8ooc.l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 1200A • W id e current range ■ High voltag e ratings up to 4 5 0 0 V ■ High surge current capab ilities ■ Diffused junction ■ H ockey Puk version
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12085/A
DQ-200AB
D-141
4AS54S2
RECTIFIER DIODE D135
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RF830
Abstract: No abstract text available
Text: International gäg Rectifier 1 HEXFET Power M O S F E T INTERNATIONAL RECTIFIER 4Ö55452 D01476B G3Ö _ Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PD-9.311K INR IRF830 bSE I> ^ dss - 500V
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D01476B
IRF830
RF830
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Untitled
Abstract: No abstract text available
Text: 4655452 International ior Rectifier HEXFET Power MOSFET • • • • • • 0014544 4b2 * I N R PD-9.566B IRC634 INTERNATIONAL b5E R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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IRC634
0-45C2
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E.78996
Abstract: 78996 L220A 4525 GE DIODE RK 69 ir e.78996 D183 D184 D185 D186
Text: • International [¡^Rectifier 4Ô5S45B OOlbbSa 712 ■ INR s e r ie s irk.l56, .L71, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules INTERNATIONAL RECTIFIER bSE » Features ■ ■ ■ ■ ■ ■ ■ ■ Fast recovery tim e characteristics Electrically isolated base plate
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FA30PA60
Abstract: HFA30PA60C
Text: bSE D INTERNATIONAL RECTIFIER • 4055452 G G 1 7 ? n Ö4G ■ INR PD-2.336 International S Rectifier HEXFRED Provisional Data Sheet HFA30PA60C u l t r a f a s t , s o f t r e c o v e r y d io d e Major R atings and C h a ra cteristics per Leg C haracteristics
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HFA30PA60C
D-63B0
FA30PA60
HFA30PA60C
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595-PH
Abstract: 30V 595PH
Text: International k ?r Rectifier HEXFET Power MOSFET • • • • PD-9.847 4655452 0015122 312 * I N R _ IR L IZ 24G INTERNATIONAL RECTIFIER b5E » Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive
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O-220
M655452
0015R27
IRLIZ24G
595-PH
30V 595PH
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Untitled
Abstract: No abstract text available
Text: I . . I P D -5.039 International XQR Rectifier IGBT SIP MODULE Features • • • • C P V 363 M4 U preliminart UltraFast IGBT 1 I Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes
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360Vdc,
MAS5M52
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PDF
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Untitled
Abstract: No abstract text available
Text: 4B5545E 0015B44 DTE * I N R International 'k ?r Rectifier IR L 520S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • PD-9.908 Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive
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4B5545E
0015B44
SMD-220
high10b.
IRL520S
MA55M52
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IRF1520
Abstract: No abstract text available
Text: • International rä« Rectifier 4flSS4S2 DOlSOfifi 077 « I N R p d -9.830 IRFI520G INTERNATIONAL RECTIFIER HEXFET Power M O SFET Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating
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IRFI520G
T0-220
IRF1520
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Untitled
Abstract: No abstract text available
Text: I Bulletin 127133 rev. D 09/97 International IS R Rectifier i r k .1 0 5 s e r i e s NEW ADD-A-pak Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features 105 A • E lectrica lly isolated: D BC base plate ■ 3 50 0 VRMS isola tin g vo ltag e
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E920E00
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-6.057D international I R Rectifier IR 5 1 H D 7 3 7 SELF-OSCILLATING HALF-BRIDGE Features Product Summary • Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation
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IR51HD737
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-2.345A International Rectifier 15CGQ100 SCHOTTKY RECTIFIER 35 Amp Major Ratings and Characteristics Characteristics Description/Fëatures The 15CGQ100 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic,
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15CGQ100
15CGQ100
O-254AA
MIL-S-19500
15CGQ100U
15CGQ100D
CATH00E
O-254
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Untitled
Abstract: No abstract text available
Text: International iQR R ectifier HEXFET P o w e r M O S F E T • • • • • 465545E DD151E4 =136 * I N R PD-9.652A IRFI630G IN T E R N A T IO N A L R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist - 4.8mm
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465545E
DD151E4
IRFI630G
O-220
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c776
Abstract: IRGKI090U06 irgki C776 Y
Text: bitemational r k ]Rectifier PD-9.962B IRGKI090U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT Low Side Switch O3 V CE = 600V •Rugged Design •Simple gate-drive .Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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IRGKI090U06
25KHz
100KHz
C-775
IRGKI090U06
IOO11H
C-776
5S455
002G5bb
c776
irgki
C776 Y
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