BB112
Abstract: No abstract text available
Text: Philips Semiconductors Product specification AM variable capacitance diode BB112 FEATURES • Matched to 3% k • Leaded plastic package a_T' • C8.5: 23 pF; ratio: 21. -J a APPLICATIONS Fig.1 Simplified outline SOD69; TO-92 variant and symbol. • Electronic tuning in AM radio
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BB112
BB112
711GfiSt
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BUK101-50GS
Abstract: buk101
Text: PHILIPS I N T E R N A T I O N A L hSE D • 7 1 1 0 0 2 b DDb3Ö G Ö 5 3 e! « P H I N Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION BUK101-50GS QUICK REFERENCE DATA Monolithic temperature and overload protected power M O SFE T
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711Qfl2b
BUK101-50GS
lISL/lISL25JC
BUK101-50GS
buk101
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smd code marking sot23
Abstract: O25 sot23 BBY42
Text: P h ilip s S e m ic o n d u c to rs P ro d u c t s p e c ific a tio n VHF variable capacitance diode BBY42 FEATURES • Excellent linearity • Small plastic SMD package • C28: 2.7 pF; ratio: 14. APPLICATIONS • Electronic tuning in VHF television tuners, band B up to 460 MHz
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BBY42
BBY42
7110flEb
D53T4
smd code marking sot23
O25 sot23
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transistor 9567
Abstract: 271 Ceramic Disc Capacitors 72741 i 72741 BLF521 IEC134 JLF521 9567 transistor
Text: Philips Sem iconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7- 3 1 - 0 7 ' 5bE ]> BLF521 7110â2Li D D M 3 ci3l4 70S • PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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BLF521
OT172D
OT172D
transistor 9567
271 Ceramic Disc Capacitors
72741
i 72741
BLF521
IEC134
JLF521
9567 transistor
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