711GFI5B Search Results

K638

Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a

SCN26562

Abstract: SCN26562C4A52 SCN26562C4N48
Contextual Info: INTEGRATED CIRCUITS SCN26562 Dual universal serial communications controller DUSCC Product specification 1995 May 1 IC19 Philips Semiconductors PHILIPS PHILIPS 711DflSb ôbT Philips Semiconductors Product specification Dual universal serial communications controller (DUSCC)

MSA806

Abstract: philips if catv amplifier gt 6312 philips MATV amplifiers
Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q82/86 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

A367

Abstract: BLV12 IEC134 SOT123
Contextual Info: * Philips Sem iconductors ^ " b S E VHF power transistor OObSflm *^M5 M P H I N Product specification D — philips BLV12 international Q U IC K R EFER E N C E DATA RF performance at Tnfc = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for

international rectifier NE 22

Abstract: AN176 compressor ALC circuit diagram of hearing aid compandor hearing aids sa575 NE575AD NE575AN SA575AD
Contextual Info: PHILIPS INTERNATIONAL bOE D 711ÛâEb 005352*1 blE H P H I N Product specification Philips Semiconductors RF Communications Products NE/SA575A Low voltage compandor T -7 3 - 4 3 PIN CONFIGURATION DESCRIPTION FE A T U R E S The NE/SA575A is a precision dual gain

LVT125

Abstract: 74LVT 74LVT125 74LVT125D
Contextual Info: Philips Sem iconductors Low Voltage Products Product specification • 3.3V ABT Quad buffer 3-State FEATU RES Quad bus interface 3-State buffers Output capability: +64mA/-32mA TTL input and output switching levels Input and output interface capability to

32 led VU-METER

Abstract: VU METER 32 led analog audio 3 input selector analog VU-METER 20 led VU meter "rf modulator" 50 led VU meter audio limiter ic VU-METER 20 led VU meter transistor
Contextual Info: INTEGRATED CIRCUITS TDA961 OH Audio FM processor for VHS hi-fi audio Product specification Supersedes data of March 1993 File under Integrated Circuits, IC02 1995 Mar 21 Philips Semiconductors PHILIPS P H ILIPS 7110flEb O Of l T ^ b l TTS Philips Semiconductors

PCF8571

Abstract: LA494
Contextual Info: Preliminary specification Philips Semiconductors 1 Telecom microcontroller PCD3343A with serial I/O interface PCD3348A FEATURES 2 • 8-bit CPU, ROM, RAM, I/O in a single 28-lead package • 3 kbytes ROM, 224 bytes RAM PCD3343A • 8 kbytes ROM, 256 bytes RAM (PCD3348A)

Contextual Info: _ . BC140 BC141 _ / V PHILIPS INTERNATIONAL SbE D • TllGÛSb G D m i b S 0=15 « P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes for general purpose applications. P-N-P complements are BC160 and BC161.

74LVT20

Abstract: 74LVT20D 74LVT20PW
Contextual Info: Philips Semiconductors Product specification 3.3V Dual 4-input NAND gate 74LVT20 QUICK REFERENCE DATA CONDITIONS Tamb = 25°C; GND = OV PARAMETER SYMBOL LOGIC DIAGRAM tPLH tpHL Propagation delay An, Bn, Cn, Dn to Yn CL = 50pF; VCC = 3.3V C|N Input capacitance

54F158A

Contextual Info: Philips Semiconductors Military FAST Products Product specification Quad 2-input data selector/multiplexer 54F157A non-inverted, 54F158A inverted c7 a ca f i m m s /a, m m a &ba DESCRIPTION The 54F157A is a high-speed quad 2-input multiplexer which selects

hef4751

Abstract: tdd1742t hef4750 VMUX HEF4750V TDD1742 S028 TPD1742T
Contextual Info: Philips Semiconductors Product specification Low power fequency synthesizer LOPSY TDD1742T GENERAL DESCRIPTION The TDD1742T is a low power, high-performance frequency synthesizer in local oxidation CMOS (LOCMOS) technology. The device is designed fo r use in channelized V H F /U H F applications especially