711DFL2 Search Results

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

MCL T1-1

Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
Contextual Info: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM

J108

Abstract: J109 J110 PZFJ108 PZFJ109 PZFJ110
Contextual Info: • 711Dfl2b OObflOMa 414 IPHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low R d s o ii at zero gate voltage (< 8 £i for PZFJ 108)

RZB12250Y

Contextual Info: / " 3 3 - ! j £ RZB12250Y M AIN TEN AN C E TYPE PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMbblb 7 n ■PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications.

BTW42-600R

Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
Contextual Info: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase

1df diode

Abstract: 74ABT 74ABT240-1D 74ABT240-1DB 74ABT240-1N
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711Dfl2b 0057442 534 ■ PHIN Philips Sem iconductors Advanced BiCMOS Products P roduct specification Octal inverting buffer with 30£2 series termination resistors 3-State 74ABT240-1 QUICK REFERENCE DATA FEATURES • Octal bus interface

Contextual Info: “~T:L3 3 r~ l 5 RX3034B70W D E V EL O P M EN T DATA T h is data sheet c o n ta in s .advance in fo rm a tio n and sp e cific a tio n s are su b ject to cha nge w it h o u t notice. PHILIPS i n t e r n a t i o n a l S b E ]> • 711Dfl2b O O t4fciS3ti b2fc, « P H I N

T0220AB

Abstract: ScansUX66
Contextual Info: PHILIPS INTERNATIONAL 41E ]> P 711Dfl2ti G'QEmfl? £ ggPHIN r - 2 3 '0 7 _ Philips Com ponents BWS2E-100/150/200 Data sheet status Preliminary specification date o f issue January 1991 GENERAL DESCRIPTION Glass passivated, high efficiency, rugged dual epitaxial rectifier

BUK102-50GL

Abstract: IEC134 T0220AB AAB3 buk102-500l
Contextual Info: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and

Contextual Info: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMb4flfl 043 ■ P H I N 7 MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.

TRANSISTOR SMD MARKING CODE 5b

Abstract: transistor smd CF RQ TRANSISTOR SMD MARKING CODE KF smd transistor marking L6 NPN SMD Transistor 7z transistor marking smd 7z 5B smd transistor data transistor SMD MARKING CODE HF smd marking code SSs SMD MARKING GP TRANSISTOR
Contextual Info: Philips Semiconductors 711Dfl2h DDbTBT? 743 M P H IN Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • QUICK REFERENCE DATA RF performance at Ts < 60 °C In a common emitter class-B test circuit see note 1 . Emitter-ballasting resistors for

M3163

Abstract: M3162
Contextual Info: BYV121 SERIES - = PHILIPS INTERNATIONAL SbE ]> • 711Dfl2t D O m m b bb3 ■ P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop,

BYX25

Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
Contextual Info: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:

BFQ290

Abstract: BFQ291
Contextual Info: Prelim inary specification P hilips Sem iconductors -3 3 -S 7 PNP HDTV video transistor PH IL I P S I N T E R N A T I O N A L SbE ]> BFQ290 711Dfl2h 00 45 b7 3 5T7 PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 collector

DIODE S3H

Abstract: km 1667 smd diode os A2 diode smd ultra fast recovery time diode A1 SMD DIODE d 1667 dual reverse diode smd NE ultra low drop forward voltage diode
Contextual Info: Philips Semiconductors 711Dfl2fci 0 D b ci b 7 4 T il BPHIN Dual rectifiers - SMD version Ultra fast recovery Product specification BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency monolithic dual rectifiers in SOT223

PH5415

Abstract: ph54 h541 PH5416
Contextual Info: PH5415 PH5416 PHILIPS INTERNATIONAL 5bE J> • 711Dfl2b D O M S S 4 4 033 M P H I N 3 7 -^ / 7 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage smali-signal transistors, prim arily intended fo r use in telephony applications and encapsulated in a T O -92 envelope.

BFQ32

Abstract: BFQ32S BFG31 BFQ149 X3A-BFQ32
Contextual Info: Philips Semiconductors Product specification T-3|-c?o PNP 4 GHz wideband transistor crystal PHILIPS INTERNATIONAL 711Dfl2b OOMbCHB flfl? • PHIN 5bE t DESCRIPTION X3A-BFQ32 MECHANICAL DATA PNP crystal used in BFQ32S SOT37 , BFQ149 (SOT89) and BFG31 (SOT223). Crystals are supplied as whole

PCF8567C

Abstract: sot158a PCF8567CP PCF8567CT CMOS applications handbook
Contextual Info: D E V ELO P M EN T DATA PCF8567C T h is data sheet c o n ta in s a dvance in fo rm a tio n and sp e cific atio n s are subject to cha nge w it h o u t notice. PH IL IP S I N T E R N A T I O N A L SDE D • 711Dfl2b D O B S lb E SS7 ■ PHIN FOR D E T A ILE D IN F O R M A T IO N SEE THE LATEST ISSUE OF H A N DBO O K IC12 0 R D A T A SH EET

BUK436-200A

Abstract: BUK436-200B Philips 016 S
Contextual Info: P H IL I PS I N T E R N A T I O N A L bSE D • 711Dfl2b G 0 b 3^ Q l ObS W P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BD132

Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
Contextual Info: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.

Contextual Info: JA100 JA101 PHILIPS INTERNATIONAL SbE D • 711Dfl2b 0 0 4 2 4 4 b T25 ■ P H I N T -T f- 2 / PNP SMALL-SIGNAL TRANSISTORS PNP small-signal transistors in TO-92 envelopes, recommended for general purpose amplifier applications. The complementary types are the JC500 and JC501 respectively.

sap16

Abstract: CSB503F5 A2x smd sap15 SAP6 SAP12 SMU FM IC TDA9850T CSB503F58 SDIP32
Contextual Info: INTEGRATED CIRCUITS h m m m TDA9850 l2C-bus controlled BTSC stereo/SAP decoder Preliminary specification File under Integrated Circuits, IC02 Philips Sem iconductors 711Dfl2b o t n o b c n 1995 Jun 19 PHILIPS b3b Philips Semiconductors Preliminary specification

12 pin 4digit 7 segment display

Abstract: ltd226-r12 LTD226F-12 7 segment display 12 pin LTD226R-12 LTD226R-22
Contextual Info: PH ILI PS INTERNATIONAL Philips Components bDE D • 711Dfl2b GQ57GS1 113 IPHIN LTD226 Data sheet status P rod uct specification date of issue July 1990 Liquid crystal display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTD226 is a 4-digit, 7-segment, multi-function LCD.

BFW17A

Abstract: bfw17a philips semiconductor lem HA
Contextual Info: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good