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    m 60 n 03 g10

    Abstract: No abstract text available
    Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60


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    PDF 7057fl 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 m 60 n 03 g10

    bcv59

    Abstract: N705 bcv-59 ZTX301
    Text: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C


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    PDF 000b675 BC546A BC546B BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B bcv59 N705 bcv-59 ZTX301

    Untitled

    Abstract: No abstract text available
    Text: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc


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    PDF 70S7fl 000bfl7fl ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -J U L Y 94_ FEATURES * 100 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * P,ot=1W a tt ABSOLUTE M A X IM U M RATINGS. Collector-Emitter Voltage Emitter-Base Voltage


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    PDF ZTX753 ZTX752 cH7Q57Ã 0Q1Q354 001G35S

    458A

    Abstract: N458
    Text: TS ZE TE X INC D. ^70570 OODblûb T 95D 06 186 D - T 'S 8 - o - 7 ZN458, ZN 458A ZN458B 2 .4 5 V precision reference regulator FEATU RES • • • • • • • Guaranteed 5 m V maximum deviation over full temperature range Low temperature coefficient 0 .0 0 3 % /°C


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    PDF ZN458, ZN458B 10ppm 10/iV ZN458A 1Hz-10kHz ZN458 70S7fi 458A N458

    ZVN3310

    Abstract: ZVN3310A ZVN3310B ZVN3310F F159
    Text: büE D • T ti?GS7a QODVÔST 3DÔ ■ ZETB — ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN 3310 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance


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    PDF 0D70ST ZVN3310 ZVN3310A ZVN3310B ZVN3310F F-162 0007fibS F-163 ZVN3310 F159