K6F2008S2E
Abstract: K6F2008S2E-F
Text: K6F2008S2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F2008S2E
256Kx8
K6F2008S2E-F
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KM616V4000BL-L
Abstract: KM616U4000B
Text: Back KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996
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KM616V4000B,
KM616U4000B
256Kx16
10/45mA
KM616V4000BI,
KM616U4000BI
KM616V4000BL-L
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BA100 diode
Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)
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KADxx0300B
2Mx16)
69-Ball
10MAX
BA100 diode
BA115
BA116
BA961
SAMSUNG MCP
ba841
ba7 transistor
BA124
BA127
BA133 diode
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K1S32161CC
Abstract: K1S32161CC-I
Text: Preliminary K1S32161CC UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark July 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K1S32161CC
2Mx16
K1S32161CC
55/Typ.
35/Typ.
K1S32161CC-I
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K1S32161CD-FI70
Abstract: No abstract text available
Text: K1S32161CD UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 04, 2004 Preliminary 1.0 Finalize - Added Lead Free Product April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K1S32161CD
2Mx16
K1S32161CD
K1S32161CD-FI70
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K1S32161CC
Abstract: K1S32161CC-I
Text: K1S32161CC UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft July 14, 2003 1.0 Finalize -Corrected tOH from 5ns to 3ns September 20, 2004 Final
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K1S32161CC
2Mx16
K1S32161CC
K1S32161CC-I
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EM640FP16
Abstract: No abstract text available
Text: EM640FP16 Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft October 24 , 2002 0.1 2’nd Draft Changed Icc, Icc1 value November 11 , 2002
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EM640FP16
256Kx16
EM640FP16:
100ns
120ns
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM K6F2008R2E Family Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F2008R2E
256Kx8
256Kx8
32/Typ.
58/Typ.
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transistor a16
Abstract: SRAM 6T
Text: MoBL3 : Compatibility with MoBL /MoBL2™ SRAMs Introduction MoBL3: The High-density Solution Cypress has been on the leading edge in supporting low-power applications with its More Battery Life™ MoBL® products. MoBL products have been the key in extending battery life in several wireless applications. In continuing the tradition of supplying low-power, high-density solutions for power-sensitive applications, Cypress has introduced the
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KM616U4000BLTI-8L
Abstract: KM616U4000B
Text: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996
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KM616V4000B,
KM616U4000B
256Kx16
10/45mA
KM616V4000BI,
KM616U4000BI
KM616U4000BLTI-8L
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K1S16161CA
Abstract: K1S16161CA-I
Text: Preliminary K1S16161CA UtRAM Document Title 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K1S16161CA
1Mx16
K1S16161CA
55/Typ.
35/Typ.
K1S16161CA-I
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EM641FP16
Abstract: No abstract text available
Text: merging Memory & Logic Solutions Inc. EM641FP16 Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark October 24 , 2002 Preliminary 0.0 Initial Draft
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EM641FP16
256Kx16
100ns
120ns
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE RECTIFIER STACKS 70ns-150ns Recovery • Axial Leaded ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current (in oil) (to) Volts Amps Amps 55°C Reverse Current @ Vrwm Forward Voltage
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OCR Scan
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70ns-150ns
SP25UF
SP50UF
SP75UF
SP100UF
SP125UF
SP150UF
SP200UF
SP250UF
SP25F
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ic 4013 pin configuration diagram
Abstract: No abstract text available
Text: INTEGRATED DEVICE Integrated Device Technology, Inc. m M7E D MÔ2S771 0010061 S * I D T SUBSYSTEMS FLEXI-PAK FAMILY 32K x 32 128KX32 CMOS STATIC RAM MODULES IDT7M4003 IDT7M4Q13 - T - M t - 2 3 - m FEATURES: DESCRIPTION: • T h e ID T 7 M 4 0 0 3 /4 0 1 3 a re hig h -sp e ed , high-density
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OCR Scan
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2S771
IDT7M4003
IDT7M4Q13
128KX32
7M4003SxxCHx
T-46-23-14
7M4013SxxCHx
IDT7M4003/4013
32K/128K
7M4013SxxNH
ic 4013 pin configuration diagram
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