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    70123 Search Results

    70123 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10146070-123Y0LF Amphenol Communications Solutions PCI Express®x16 vertical Card Edge Connector, 164 Positions, 1mm (0.039inch) Pitch Visit Amphenol Communications Solutions
    470-1235-100 Amphenol Communications Solutions Receptacle. mod,10Positions, 23.5mm, NEXLEV Visit Amphenol Communications Solutions
    10134170-1230LF Amphenol Communications Solutions Minitek® Pwr 4.2, Receptacle Terminal, Gold Flash, Chrysocal, AWG(#22-28). Visit Amphenol Communications Solutions
    470-1235-600 Amphenol Communications Solutions Receptacle. mod,10Positions, 23.5mm,LEAD FREE, NEXLEV Visit Amphenol Communications Solutions
    10158517-01231LF Amphenol Communications Solutions Minitek® Multipitch™,1.5mm Crimp-to-Wire Connector Platform, Cable Receptacle, 12 Position, With CPA/Without TPA Visit Amphenol Communications Solutions
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    70123 Price and Stock

    ECS International Inc ECS-270-12-33Q-JES-TR

    CRYSTAL 27.0000MHZ 12PF SMD
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    DigiKey ECS-270-12-33Q-JES-TR Cut Tape 7,633 1
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    ECS-270-12-33Q-JES-TR Digi-Reel 7,633 1
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    Mouser Electronics ECS-270-12-33Q-JES-TR 1,636
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    Avnet Abacus ECS-270-12-33Q-JES-TR Reel 18 Weeks 3,000
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    Schurter Electronic Components 0031.7701.23

    FUSE HLDR CARTRIDGE 125V 5A SMD
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    DigiKey 0031.7701.23 Cut Tape 2,529 1
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    0031.7701.23 Digi-Reel 2,529 1
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    Avnet Americas 0031.7701.23 Box 6 Weeks, 6 Days 1,500
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    Sager 0031.7701.23 1
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    Cinch Connectivity Solutions 131-3701-236

    CONN SMB JACK STR 50 OHM PCB
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    DigiKey 131-3701-236 Bulk 325 1
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    Interstate Connecting Components 131-3701-236
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    Richardson RFPD 131-3701-236 250
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    Mueller Electric Company BU-1420701236

    CONN SMA JACK STR 50OHM PCB
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    DigiKey BU-1420701236 Bulk 96 1
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    Newark BU-1420701236 Bulk 20 1
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    Murrplastik Systemtechnik GmbH 87701238

    ZL-AH 121 CABLE HOLDER WITH AL C
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    DigiKey 87701238 Bulk 10 1
    • 1 $6.47
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    Find more 70123 price and stock on Findchips.com

    70123 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    70123 WIHA Sockets, Socket Handles, Tools, SOCKET TORX TR T40S 1.65" Original PDF
    70123 Gilway Technical Lamp DRAGONpuck LED Module Scan PDF
    701-23-02107 Tyco Electronics Connector: Telephone/ Telecom Connector: PIN: 3: CRMP Original PDF
    701232FX Lapp Group Connector: Circular Connector: M: 12: THRU Original PDF
    7012-3C Brady Worldwide B946 7012-3C BLK/YEL STY-3C Original PDF

    70123 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    45VM32160D

    Abstract: No abstract text available
    Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		IS42/45VM32160D 32Bits IS42/45VM32160D -40oC 16Mx32 IS42VM32160D-6BLI IS42VM32160D-75BLI 90-ball 45VM32160D PDF

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI PDF

    IS42VS16100E

    Abstract: 42VS16100E IS42VS16100E-75BLI
    Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11


    Original     		IS42VS16100E 4000-mil 60-ball 400-mil IS42VS16100E 42VS16100E IS42VS16100E-75BLI PDF

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		CMS3216LAx-75xx 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH PDF

    Untitled

    Abstract: No abstract text available
    Text: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1


    Original     		CMS4A16LAx 8Mx16) 160ns 350uA 400uA PDF

    AS4SD32M16

    Abstract: No abstract text available
    Text: SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive


    Original     		AS4SD32M16 512Mb: 192-cycle -40oC -55oC 125oC AS4SD32M16 PDF

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply


    Original     		AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 208-PBGA PDF

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive


    Original     		AS4SD2M32 64-Mb) 133MHz TSOPII-86LD -40oC -55oC 125oC AS4SD2M32 PDF

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


    Original     		AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG PDF

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • • • • • • • • • • • • • • Full Military temp (-55°C to 125°C) processing available Copper lead frame option for enhanced reliability


    Original     		AS4SD8M16 096-cycle -40oC -55oC 125oC AS4SD8M16 PDF

    IS42S32400D

    Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
    Text: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


    Original     		IS42S32400D 128-MBIT 128Mb rS32400D-7TI 86-Pin IS42S32400D-7TLI IS42S32400D-7BI IS42S32400D 42S32400D is42s32400d-6bli IS42S32400D-7TLI PDF

    IS42S16160D

    Abstract: IS42S16160D-7TLI
    Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


    Original     		IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg 16Meg 256-MBIT 256Mb IS42S83200D IS42S16160D IS42S16160D-7TLI PDF

    DDR200

    Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
    Text: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).


    Original     		IBMN612404GT3B IBMN612804GT3B 128Mb DDR266A DDR266B DDR200 06K0566 F39350B DDR200 DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266 PDF

    MT48LC4M32B2P

    Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
    Text: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive


    Original     		128Mb: MT48LC4M32B2 PC100 096-cycle 09005aef80872800/Source: 09005aef80863355 128MbSDRAMx32 MT48LC4M32B2P MT48LC4M32B2TG-7 MT48LC4M32B2 PDF

    NT5DS8M16FS-5T

    Abstract: NT5DS8M16FS-6K NT5DS8
    Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T


    Original     		NT5DS8M16FT NT5DS8M16FS 128Mb NT5DS8M16FS-5T NT5DS8M16FS-6K NT5DS8 PDF

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original     		IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s PDF

    Nanya nt5ds8m16fs

    Abstract: NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT
    Text: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8


    Original     		NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb Nanya nt5ds8m16fs NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT PDF

    NT5DS8M16FS-5T

    Abstract: NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS
    Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T


    Original     		NT5DS8M16FT NT5DS8M16FS 128Mb NT5DS8M16FS-5T NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS PDF

    NT5DS16M16BF-6K

    Abstract: NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M
    Text: NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS32M8BG NT5DS16M16BG 256Mb DDR SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions


    Original     		NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS16M16BF-6K NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M PDF

    mt48lc32m16a2p-75

    Abstract: MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c
    Text: 512Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Options • PC100- and PC133-compliant


    Original     		512Mb: MT48LC128M4A2 MT48LC64M8A2 MT48LC32M16A2 PC100- PC133-compliant 192-cycle 09005aef809bf8f3/Source: 09005aef80818a4a 512MbSDRAM mt48lc32m16a2p-75 MT48LC32M16A2P-75C 1m x16 SDRAM MICRON A11 MARKING CODE MT48LC32M16A2P MT48LC128M4A2 MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2P-75 c PDF

    AY-133

    Abstract: BA1U15 mt18lsdt3272ag10 168-PIN MT9LSDT1672AG-13E MT48LC16M8A2TG 168-pin sdram mt9lsdt1672g-133b1 MT9LSDT1672G-133B
    Text: 128MB x72, ECC, SR , 256MB (x72, ECC, DR) 168-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT9LSDT1672A(I) – 128MB MT18LSDT3272A(I) – 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features • •


    Original     		128MB 256MB 168-PIN MT9LSDT1672A MT18LSDT3272A PC100- PC133-compliant AY-133 BA1U15 mt18lsdt3272ag10 MT9LSDT1672AG-13E MT48LC16M8A2TG 168-pin sdram mt9lsdt1672g-133b1 MT9LSDT1672G-133B PDF

    09005aef811ce1d5

    Abstract: MT48LC2M32B2 MT48LC2M32B2TG-7G
    Text: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock


    Original     		MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 09005aef811ce1d5 MT48LC2M32B2TG-7G PDF

    MT48LC8M32LFB5

    Abstract: D9CDF MT48H8M32LFB5-75 IT mt48h8m32lff5-8 MT48H8M32LFB5-75 MT48H8M32LF MT48V8M32LFB5-10 MT48LC8M32LFB5-8 stop mt48h8m32lfb5 rev g
    Text: 256Mb: x32 Mobile SDRAM Features Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features • • • • • • • • • • • •


    Original     		256Mb: MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF 90-ball 09005aef80d460f2/Source: 09005aef80cd8d41 256Mb MT48LC8M32LFB5 D9CDF MT48H8M32LFB5-75 IT mt48h8m32lff5-8 MT48H8M32LFB5-75 MT48V8M32LFB5-10 MT48LC8M32LFB5-8 stop mt48h8m32lfb5 rev g PDF

    MT4LSDT1664

    Abstract: MT4LSDT464 MT4LSDT864 MT4LSDT1664HG-133B1 HY10
    Text: 32MB, 64MB, 128MB x64, SR 144-PIN SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT4LSDT464(L)H(I) – 32MB MT4LSDT864(L)H(I) – 64MB MT4LSDT1664(L)H(I) – 128MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules


    Original     		128MB 144-PIN MT4LSDT464 MT4LSDT864 MT4LSDT1664 MO-190) PC100 PC133 MT4LSDT1664HG-133B1 HY10 PDF