marking 6z
Abstract: diode 6z sot-23 LMBF170LT1 LMBF170LT1G LMBF170LT3 LMBF170LT3G marking 6Z SOT23
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1 LMBF170LT1 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Shipping 6Z 3000/Tape&Reel 6Z Pb-Free 3000/Tape&Reel 6Z 10000/Tape&Reel 6Z (Pb-Free)
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Original
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LMBF170LT1
OT-23
3000/Tape
10000/Tape
LMBF170LT1G
LMBF170LT3
marking 6z
diode 6z sot-23
LMBF170LT1
LMBF170LT1G
LMBF170LT3
LMBF170LT3G
marking 6Z SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1G LMBF170LT1G 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Drain 3 Shipping LMBF170LT1G 6Z 3000/Tape&Reel LMBF170LT3G 6Z 10000/Tape&Reel
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Original
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LMBF170LT1G
OT-23
3000/Tape
LMBF170LT3G
10000/Tape
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PDF
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code marking 6z sot-23
Abstract: TO236 footprint Power MOSFET N-Channel sot-23 6Z SOT23 sot-23 MARKING CODE 6Z marking "td" sot23 marking 6Z SOT23 TO-236 footprint MMBF170LT1 MMBF170LT3G
Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage - Continuous
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Original
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MMBF170LT1
OT-23
MMBF170LT1/D
code marking 6z sot-23
TO236 footprint
Power MOSFET N-Channel sot-23
6Z SOT23
sot-23 MARKING CODE 6Z
marking "td" sot23
marking 6Z SOT23
TO-236 footprint
MMBF170LT1
MMBF170LT3G
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PDF
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code marking 6z sot-23
Abstract: 50Winput MMBF170LT1G sot-23 MARKING CODE 6Z
Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features http://onsemi.com • Pb−Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage VDGS 60 Vdc
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Original
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MMBF170LT1
OT-23
OT-23
code marking 6z sot-23
50Winput
MMBF170LT1G
sot-23 MARKING CODE 6Z
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PDF
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2802S
Abstract: r0201 D29/SEKI ST 22
Text: 0002/81/9 'INiad N-lfrHSS 'SOlIlNNId IHSItfdlSMfrHBNdOlNNODNSiQlItGH XDS\SlN3NDdWDGVZ I dO T 133HS| 3N0N :31VDS SOTTI A3U b86T-S>TA ISNV M id DIU.L3W03D QNV SNOISN3WIQ 13ycft]31NI 'ON 'QMQ 3ZIS - is - ESZ'Z 96'SS 69 >S ZKES S IT S 88'OS I9'6b t>£'8t> ¿OYb
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OCR Scan
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SBH41
SBH41-NBPB-D_
HEflDERC\CDNNTDP\BH41\CTRAIGHT
PIWM1105.
CEH41-N
/18/200B
2802S
r0201
D29/SEKI ST 22
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PDF
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702 sot23
Abstract: No abstract text available
Text: SOT-23 TRANSISTORS continued TMOS FETs The following is a listing of small-signal surface mount TMOS FETs which exhibit low Ros(on) characteristics. Pinout: 1-Gate, 2-Source, 3-Drain Device Switching Time V GS(th) R DS(on) @ I d Marking Ohm mA BVqss Volts
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OCR Scan
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OT-23
MMBF170LT1
BSS123LT1
2N7002LT1
702 sot23
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PDF
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code marking 6z sot-23
Abstract: marking 6Z SOT23 MMBF170LT1G TO236 footprint MMBF170LT1 MMBF170LT3 MMBF170LT3G MOSFET N SOT-23 sot-23 MARKING CODE 6Z marking CODE 6z
Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage
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Original
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MMBF170LT1
OT-23
MMBF170LT1/D
code marking 6z sot-23
marking 6Z SOT23
MMBF170LT1G
TO236 footprint
MMBF170LT1
MMBF170LT3
MMBF170LT3G
MOSFET N SOT-23
sot-23 MARKING CODE 6Z
marking CODE 6z
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PDF
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code marking 6z sot-23
Abstract: diode 6z sot-23 TO-236-3 TO236 footprint Power MOSFET N-Channel sot-23 marking 6Z MOSFET SOT-23 sot-23 MARKING CODE 6Z to-236 MARKING QG 6 PIN
Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage
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Original
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MMBF170LT1
OT-23
MMBF170LT1/D
code marking 6z sot-23
diode 6z sot-23
TO-236-3
TO236 footprint
Power MOSFET N-Channel sot-23
marking 6Z
MOSFET SOT-23
sot-23 MARKING CODE 6Z
to-236
MARKING QG 6 PIN
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PDF
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t6661
Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
Text: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel
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OCR Scan
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O-236AB)
OT-23
318E-04
O-261AA)
OT-223
O-236AB
OT-23)
MMBF170LT1
BSS123LT1
2N7002LT1
t6661
ft960
marking 6Z SOT23
702 sot23
sot 23 70.2
sot-23 mosfet Marking SA s
6z sot223 marking
marking 6Z
25 marking
6z sot
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBF170L, NVBF170L Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
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Original
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MMBF170L,
NVBF170L
OT-23
AEC-Q101
OT-23
MMBF170LT1/D
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PDF
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marking 6Z
Abstract: MMBF170LT3G MMBF170LT1 MMBF170LT1G MMBF170LT3 sot-23 MARKING CODE 6Z 6Z SOT23
Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features http://onsemi.com • Pb−Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage Rating VDSS 60 Vdc Drain−Gate Voltage VDGS 60 Vdc
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Original
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MMBF170LT1
OT-23
MMBF170LT1/D
marking 6Z
MMBF170LT3G
MMBF170LT1
MMBF170LT1G
MMBF170LT3
sot-23 MARKING CODE 6Z
6Z SOT23
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PDF
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code marking 6z sot-23
Abstract: MVBF170LT1G
Text: MMBF170LT1, MVBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features • AEC Q101 Qualified − MVBF170LT1 • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit
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Original
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MMBF170LT1,
MVBF170LT1
OT-23
MVBF170LT1
OT-23
MMBF170LT1/D
code marking 6z sot-23
MVBF170LT1G
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PDF
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transistor 6z
Abstract: No abstract text available
Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating Symbol Value Drain-Source Voltage vdss 60 Vdc Drain-Gate Voltage V d GS 60 Vdc Gate-Source Voltage Vg s ±20 Vdc Drain Current — Continuous Pulsed 'd 'd m 0.5 0.8 Ade Unit D rain
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OCR Scan
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MMBF170LT1
OT-23
O-236AB)
2N7000
transistor 6z
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PDF
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bk p36
Abstract: 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 M40272
Text: •n fO «i MOS 4096x1 1024x4 4096x1 - M40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item o 0 o Organization s o (O Ô o 3 a Description Access Time ns (Max Cycle Time ns (Min) Power Dissipation mW (Max) S A H > z o 2 > o o m CO 2 m 5 o X k k k k k oo O 03
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OCR Scan
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1024x4
F2114171
4096x1
M40272
M40273
M40274
M40275
bk p36
1024x1 static ram
16x4-Bit
4710B
4720B
4725B
F16K3
F16K4
F16K5
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PDF
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NVBF170LT1
Abstract: No abstract text available
Text: MMBF170LT1, NVBF170LT1 Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
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Original
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MMBF170LT1,
NVBF170LT1
OT-23
AEC-Q101
OT-23
MMBF170LT1/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2
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Original
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MMBF170
AEC-Q101
J-STD-020
DS30104
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PDF
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"Philips Semiconductors" BAX DO-35
Abstract: B2V86-2V0 b2v86 BZV87-3V24 ba315 BA220
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes LOW-VOLTAGE STABISTORS OVERVIEW VF typ. V 1 mA 5 mA at lF: Vr V RRM ' frm 10 mA max. max. max. sF typ. rdiH max. (V) (V) (mA) (mV/K)
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OCR Scan
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DO-35
OD80C
BAX14
BA220
BA315
BA314
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
"Philips Semiconductors" BAX DO-35
B2V86-2V0
b2v86
BZV87-3V24
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Power MOSFET LMBF170LT1 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 ms VGS VGSM ±20 ±40
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Original
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LMBF170LT1
OT-23
LMBF170LT1
LMBF170LT1-4/4
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PDF
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13.8 8w zener diode
Abstract: "MARKING CODE" 3Y zener marking sot323 code SEMICONDUCTOR 12w marking code sot 23 6Y marking code marking code z2
Text: Central" CMSZDA2V4 THRU CMSZDA47V Semiconductor Corp. SURFACE MOUNT DUAL SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZDA2V4 Series silicon dual zener diode is a highly quality voltage regulator, connected in a
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OCR Scan
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CMSZDA47V
250mW
OT-323
T-323
20-February
13.8 8w zener diode
"MARKING CODE" 3Y
zener marking sot323
code SEMICONDUCTOR
12w marking code sot 23
6Y marking code
marking code z2
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PDF
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MMBF170LT1
Abstract: MMBF170LT3
Text: MMBF170LT1 Power MOSFET 500 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 ms VGS VGSM
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Original
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MMBF170LT1
r14525
MMBF170LT1/D
MMBF170LT1
MMBF170LT3
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PDF
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BF546
Abstract: marking 6k sot-23 package BF5459L F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot
Text: MOTOROLA SC 4bE T> • XSTRS/R F b 3 b 7 2 S 4 D O' îb S Ot 2 « f l O T t — 3 SO T-23 T R A N S IS T O R S (continued) Unipolar (Field Effect) Transistors (JFETs) RF JFETs Pinout: 1-Drain, 2-Source, 3-Gate NF Device Marking Typ (dB) f (MHz) Min (mmhos)
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OCR Scan
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BFJ309L
BFJ310L
BF5486L
BF5457L
BF5459L
OT-23
OT-143
MLL-34
OT-223
SO-16
BF546
marking 6k sot-23 package
F5 sot223
BFJ177
F5 marking sot223
MLL34
M6A sot-23
6z sot223 marking
Cross Reference sot
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1
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Original
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MMBF170
J-STD-020
MIL-STD-202,
DS30104
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PDF
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MMBF170 rohs
Abstract: top marking 6z DS-30104 DS30104 SOT23 k6z
Text: MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1
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Original
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MMBF170
J-STD-020
MIL-STD-202,
DS30104
MMBF170 rohs
top marking 6z
DS-30104
SOT23 k6z
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PDF
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AE fet sot-23
Abstract: MMBF170LT1
Text: MOTOROLA Order this document by MMBF170LT1/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60
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Original
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MMBF170LT1/D
MMBF170LT1
236AB)
MMBF170LT1/D*
AE fet sot-23
MMBF170LT1
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PDF
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