6r299p
Abstract: 6r299
Text: IPA60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA60R299CP
PG-TO220-3-31
SP000096438
6R299P
6r299p
6r299
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6r299p
Abstract: SP000103251 IPW60R299CP CoolMOS Power Transistor JESD22 DS1058
Text: IPW60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW60R299CP
PG-TO247-3-1
SP000103251
6R299P
6r299p
SP000103251
IPW60R299CP
CoolMOS Power Transistor
JESD22
DS1058
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IPL60R299CP
Abstract: 6R299P ipl60r JESD22 6R29
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
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IPL60R299CP
150mm²
IPL60R299CP
6R299P
ipl60r
JESD22
6R29
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6r299p
Abstract: IPW60R299CP SP000103251 JESD22 6R29 6r299
Text: IPW60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW60R299CP
PG-TO247-3
SP000103251
6R299P
6r299p
IPW60R299CP
SP000103251
JESD22
6R29
6r299
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6R299P
Abstract: 6r299 PG-TO-220-3-1 PG-TO220-3-1 IPP60R299CP JESD22 SP000084280 INFINEON transistor IPP60R299
Text: IPP60R299CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPP60R299CP
PG-TO220-3-1
SP000084280
6R299P
6R299P
6r299
PG-TO-220-3-1
PG-TO220-3-1
IPP60R299CP
JESD22
SP000084280
INFINEON transistor IPP60R299
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EL series SMD transistor
Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description
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PDF
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IPL60R299CP
150mm²
EL series SMD transistor
6R299P
ipl60R299cp
mosfet 600v
JESD22
ipl60r
IPL60
6r299
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6R299P
Abstract: IPP60R299CP INFINEON transistor IPP60R299 IPP60R299 JESD22 SP000084280 6r299
Text: IPP60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPP60R299CP
PG-TO220
SP000084280
6R299P
6R299P
IPP60R299CP
INFINEON transistor IPP60R299
IPP60R299
JESD22
SP000084280
6r299
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6r299p
Abstract: PG-TO220FP IPA60R299CP 6r299
Text: IPA60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA60R299CP
PG-TO220FP
SP000096438
6R299P
6r299p
PG-TO220FP
IPA60R299CP
6r299
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6R299P
Abstract: IPL60R299CP 6r299 g1 smd diode
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.1, 2012-01-10 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
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IPL60R299CP
150mm²
6R299P
IPL60R299CP
6r299
g1 smd diode
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6R299P
Abstract: 6R250P 6r299 6R250 IPA60R250CP 2500VA JESD22 PG-TO220-3-31 CoolMOS Power Transistor
Text: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA60R250CP
PG-TO220
PG-TO220FP
6R250P
6R299P
6R299P
6R250P
6r299
6R250
IPA60R250CP
2500VA
JESD22
PG-TO220-3-31
CoolMOS Power Transistor
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6r299p
Abstract: PG-TO247-3-1 TRANSISTOR marking ar code 6R229PIPW60R299CP IPW60R299CP 6r299 JESD22 SP000103251
Text: IPW60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW60R299CP
PG-TO247-3-1
SP000103251
6R299P
6r299p
PG-TO247-3-1
TRANSISTOR marking ar code
6R229PIPW60R299CP
IPW60R299CP
6r299
JESD22
SP000103251
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6R299P
Abstract: 6r299 6R229PIPW60R299CP 6R299P tO247 IPW60R299CP PG-TO-247-3 JESD22 SP000103251 R/6R299P tO247
Text: IPW60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW60R299CP
PG-TO247-3
SP000103251
6R299P
009-134-A
O-247
6R299P
6r299
6R229PIPW60R299CP
6R299P tO247
IPW60R299CP
PG-TO-247-3
JESD22
SP000103251
R/6R299P tO247
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6r299p
Abstract: SP000103251 IPW60R299CP
Text: IPW60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPW60R299CP
PG-TO247
SP000103251
6R299P
6r299p
SP000103251
IPW60R299CP
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6R299P
Abstract: IPI60R299CP JESD22 SP000103249 6r299
Text: IPI60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPI60R299CP
PG-TO262
SP000103249
6R299P
6R299P
IPI60R299CP
JESD22
SP000103249
6r299
|
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6R299P
Abstract: IPP60R299CP JESD22 SP000084280 DS1058 CoolMOS Power Transistor
Text: IPP60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPP60R299CP
PG-TO220
SP000084280
6R299P
6R299P
IPP60R299CP
JESD22
SP000084280
DS1058
CoolMOS Power Transistor
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6R299P
Abstract: 6r299 CoolMOS Power Transistor IPP60R299CP JESD22 SP000084280 IPP60R299 6R29
Text: IPP60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPP60R299CP
PG-TO220
SP000084280
6R299P
6R299P
6r299
CoolMOS Power Transistor
IPP60R299CP
JESD22
SP000084280
IPP60R299
6R29
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6r299
Abstract: 6R250P 6R299P
Text: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA60R250CP
PG-TO220
PG-TO220FP
6R250P
6R299P
6r299
6R250P
6R299P
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6R299P
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.1, 2012-01-10 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
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Original
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IPL60R299CP
150mmÂ
6R299P
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6R299P
Abstract: 6r299 IPP60R299CP IPP60R299 JESD22 SP000084280 INFINEON transistor IPP60R299 D44 MARKING CODE
Text: IPP60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPP60R299CP
PG-TO220
SP000084280
6R299P
6R299P
6r299
IPP60R299CP
IPP60R299
JESD22
SP000084280
INFINEON transistor IPP60R299
D44 MARKING CODE
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6R299P
Abstract: 6r299 PG-TO220FP IPA60R299CP JESD22 SP000096438 PG-TO220-FP CoolMOS Power Transistor 6R29
Text: IPA60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA60R299CP
PG-TO220FP
SP000096438
6R299P
6R299P
6r299
PG-TO220FP
IPA60R299CP
JESD22
SP000096438
PG-TO220-FP
CoolMOS Power Transistor
6R29
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6R299P
Abstract: No abstract text available
Text: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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PDF
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IPA60R250CP
PG-TO220
PG-TO220FP
6R250P
6R299P
6R299P
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6r299p
Abstract: 6r299 IPA60R299CP PG-TO220-3-31 JESD22 SP000096438 6R29
Text: IPA60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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PDF
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IPA60R299CP
PG-TO220-3-31
SP000096438
6R299P
6r299p
6r299
IPA60R299CP
PG-TO220-3-31
JESD22
SP000096438
6R29
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6R299P
Abstract: 6r299 6R29 IPB60R299CP JESD22 SMD TRANSISTOR MARKING Dd
Text: IPB60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPB60R299CP
PG-TO263
6R299P
6R299P
6r299
6R29
IPB60R299CP
JESD22
SMD TRANSISTOR MARKING Dd
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