6C000H Search Results

29DL400BT-70

Contextual Info: PRELIMINARY AMDil Am29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank,

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

transistor BC 55

Abstract: TR BC bc 163 FPT-48P-M19 FPT-48P-M20
Contextual Info: MBM29DL400TC/BC-55/70/90 Data Sheet Retired Product This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

M58BW016xB

Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers

S29AL004D

Contextual Info: Am29DL400B Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29AL004D supersedes Am29DL400B and is the factory-recommended migration path. Please refer to the S29AL004D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.

ba part 3rd year 2012

Abstract: S29CL-J
Contextual Info: S29CD-J and S29CL-J Flash Family S29CD032J, S29CD016J, S29CL032J, S29CL016J 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O S29CD-J and S29CL-J Flash Family Cover Sheet Data Sheet

fujitsu mb90f

Abstract: upc 2851 v bnt 801 v1.1 MB90F DN-13 bnt 801 K 2232 DC-06 c914 MB90F378
Contextual Info: Corporate names revised in the documents The Fujitsu Limited reorganized its LSI business into a wholly owned subsidiary, the Fujitsu Microelectronics Limited on March 21, 2008. The corporate names “Fujitsu” and “Fujitsu Limited” described all in this document have been

ST3215

Contextual Info: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)

S29CL-J

Contextual Info: S29CD-J and S29CL-J Flash Family S29CD032J, S29CD016J, S29CL032J, S29CL016J 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O S29CD-J and S29CL-J Flash Family Cover Sheet Data Sheet

Contextual Info: S29CD-G Flash Family S29CD032G, S29CD016G 32 Megabit 1M x 32-Bit , 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O featuring 170 nm Process Technology PRELIMINARY INFORMATION Data Sheet

78f1164

Abstract: PD78F1168AGC-UEU-AX 78F1165 78F1167A nec f0114h nec f0123h 78f1166 78F1166A 78F1164A ptc 100
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

M50FLW040A

Abstract: M50FLW040B PLCC32 TSOP32
Contextual Info: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)

AT25DF041A

Abstract: AT26F004 AT26F004-SSU
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 33 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

AT26F004-SSU

Abstract: AT26F004 AT26F004-MU AT26F004-SU
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 33 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

Am29BDD160GB64C

Contextual Info: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

am29f date code markings

Abstract: am29lv date code markings Am29BDD160GB64C
Contextual Info: ADVANCED INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

Contextual Info: LH28F004SU-Z9 FEATURES 4M 512 x 8 Flash Memory 42-PIN CSP TOP VIEW • 512K x 8 Word Configuration • 2.7 V Write/Erase Operation (5 V ± 0.5 V Vpp, 3.0 V ± 0.3 V V CC, CC’ +15°C to +35°C) - No Requirement For DC/DC Converter To Write/Erase / 1 2 3

Contextual Info: LH28F400SU B-ZO FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V Vpp; 3.3 V Vqq - No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time (Vcc = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability - 160 ns Maximum Access Time

M50FLW040A

Abstract: M50FLW040B PLCC32 TSOP32 A19-21
Contextual Info: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)

la 7913

Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)

Contextual Info: SHARP Ver.1.1 9 6 /1 1 /2 2 - Limited usage of LH28F800SUD (In the case of 8bit configuration ) Programmingproblem at command and data We observed some operation error when you write commandand data in following timing. * Same timing of BEX# High and WE# High

Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM44-10140-3E F2MC-16LX 16-BIT MICROCONTROLLER MB90350E Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90350E Series HARDWARE MANUAL Be sure to refer to the "Check Sheet" for the latest cautions on development.

Q002

Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)