68645 Search Results

sot-23 Marking N2

Abstract: sot-236 Marking N2 Si2302CDS
Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS APPLICATIONS

Si2302CDS

Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS APPLICATIONS

sot-23 Marking N2

Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see

INNET T2006

Abstract: THROUGH HOLE pe-65883 PM 1205A T2014 Midcom C1500 67130840 PE-644 A553
Contextual Info: PRELIMINARY Application Note 351 Transformer Selection Guide This application note lists a number of transformer part numbers from a variety of vendors for use with the DS2151, DS2152, DS2153 & DS2154. Specifications for selecting the appropriate transformer are given

Contextual Info: 123415678429ABCD58 123415678429ABCD58 1234567 89ABCDEFD  4C45E57457DC7  234C25D C4E4E  ! " #F56$9 6$9 952%  17E &4C3 F 6'53 A48  7CD45*4DCCBC5!4B4F565  A7#* 7+C24  #2734544 2B2C2,4

Contextual Info: 123415678429ABCD58 123415678429ABCD58 1234556 789ABCDECF  4C45E57457DC7  234C25D C4E4E  ! " #F56$9 6$9 6$952%  17E &4C3 F '63 A48  7CD45*4DCCBC5!4B4F565  A7#* 7+C24  #2734544 2B2C2,4

Contextual Info: 123415678429ABCD58 123415678429ABCD58 1234567 89ABCDEFD  4C45E57457DC7  234C25D C4E4E  ! " #F59$ 9$ $%52&  17E '4C3 F %$53 A48  7CD45*4DCCBC5!4B4F565  A7#* 7+C24  #2734544 2B2C2,4 13

Contextual Info: 123415678429ABCD58 123415678429ABCD58 1213434 56789ABCADE  4C45E57457DC7  234C25D C4E4E  ! " #F56$9 6$9 6$952%  17E &4C3 F6'53 A48  7CD45*4DCCBC5!4B4F565  A7#* 7+C24 1D x × FEA9DE6EC5C

Contextual Info: 123415678429ABCD58 123415678429ABCD58 1234556 789ABCDECF  4C45E57457DC7  234C25D C4E4E  ! " #F59$ 9$ 9$52%  17E &4C3 F ' 3 A48*  7CD45+4DCCBC5!4B4F565  A7#+ 7,C24  #2734544 2B2C2-4 1F3

SI2302CDS

Abstract: sot-23 Marking N2
Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see

sot-23 Marking N2

Abstract: Si2302CDS
Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • • • • Halogen-free According to IEC 61249-2-21 Definition TrenchFET Power MOSFET

Contextual Info: • Made from drawn square wire with a maximum comer radius of 0,05 mm 0.002 in. for wire wrapping. • 4-Wall shielding protects pins in unmated condition and prevents misalignment. • Polarizing slot prevents mismatching of female. • Optional retention leg (P/N Series

77693

Abstract: 68064 7808 209j 471A 77079 71459 75405 75302 69310
Contextual Info: Part num bers 494 Page Part num bers Page 46221 46223 46225 46226 46227 23 23 23 23 23 48048 48049 48050 48051 48052 20 20 20 20 20 46231 46233 46235 46236 46237 23 23 23 23 23 48085 48115 48116 48117 48231 46241 46243 46245 46246 46247 23 23 23 23 23 46420

Contextual Info: Shrouded Headers 2.54 x 2.54 mm 0.100 x 0.100 in. Description Right-Angle 4-Wall Header for Flat Cable Receptacle -WHC-5M it (0-200 3.56 t 0.06 mm (0.140 t 0.003 in.) 2.54 men _ • (0100 m I '~i “ (0100*».] TYP

DDR52

Abstract: DDR53 DDR50 TMP47E186M
Contextual Info: TO SHIBA TMP47E186/187 CMOS 4-Bit Microcontroller TMP47E186M /TMP47E187M TMP47E186M/187M is a high-speed, advanced single-chip 4-bit microcomputer with built-in ROM, RAM, E2PROM, SPI, I/O ports, a timer / counter. Model TMP47E186M TMP47E187M ROM RAM E2PROM

sot-23 Marking N2

Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see

Si2302CDS

Abstract: 68645 si2302cds-t1-e3 si2302cdst1e3
Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS APPLICATIONS

62e24

Contextual Info: 123415678429ABCD58 123415678429ABCD58 1234452 6789ABCDBEF  4C45E57457DC7  234C25DC4E4E ! "F566# 66# 6#$52%   17E &4C3F '3 A48  7CD45*4DCCBC5 4B4F565  A7"* 7+C24 1E3 x × × × FBAEF7FD6D

Contextual Info: 123415678429ABCD58 123415678429ABCD58 12345667 89ABCDEFD  4C45E57457DC7  234C25DC4E4E ! "F5## ## 6$#52%   17E &4C3F 6' 3 A48*  7CD45+4DCCBC5 4B4F565  A7"+ 7,C24 13 x × DC9F8F