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Texas Instruments UC3865NG4 IC OFFLINE SWITCH MULT TOP 16DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UC3865NG4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
INDUSTRIALSUPPLIES.COM 277565NGY DLX NON-ELC PARTITION, RACEWAY
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DigiKey	277565NGY	Bulk			1	1 $437.74 10 $437.74 100 $437.74 1000 $437.74 10000 $437.74	Buy Now
Texas Instruments SN74LS465NG4 IC BUF NON-INVERT 5.25V 20DIP
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DigiKey	SN74LS465NG4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Texas Instruments SN74HC365NG4 IC BUFFER NON-INVERT 6V 16DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SN74HC365NG4	Tube			1,075	1 - 10 - 100 - 1000 - 10000 $0.34932	Buy Now
Texas Instruments SN74HC165NG4 IC SHIFT REGISTER 8BIT 16-DIP
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DigiKey	SN74HC165NG4	Tube			2,275	1 - 10 - 100 - 1000 - 10000 $0.16187	Buy Now

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65NG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
58 65NG mosfet Abstract: 65NG 369D NTD5865NT4G Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol	Original	NTD5865N NTD5865N/D 58 65NG mosfet 65NG 369D NTD5865NT4G	PDF
Untitled Abstract: No abstract text available Text: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • • • • • Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(on) MAX	Original	NTD5865N NTD5865N/D	PDF
Untitled Abstract: No abstract text available Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	NTD4865N NTD4865N/D	PDF
Untitled Abstract: No abstract text available Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	NTD4965N NTD4965N/D	PDF
1210301 Abstract: bbc scr 78 Text: /h o m e /u s 0 1 6 9 2 6 /D M T E C m o d DRAWI NG MADE I N T H I R D ANGDE P R O J E C T I O N RARO NNNBER 5 I R55 U55D R5V M AC H IN E 466502 -1 N 834400-1 466502 - 2 6 583435-3 466502 - 3 — 466502 - 4 ii 466502 - 5 6 5-466502 -5 G 555 T5RMINAM N A M 5 :	OCR Scan	BBB435-B /home/us016926/DMTECmod 4F863F-1 I2-0CT-05 us016326 00TS3 1210301 bbc scr 78	PDF
58 65NG Abstract: No abstract text available Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol	Original	NTD5865N NTD5865N/D 58 65NG	PDF
65NG Abstract: 49 65NG 4965ng NTD4965N Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	NTD4965N NTD4965N/D 65NG 49 65NG 4965ng	PDF
65NG Abstract: 48 65NG Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	NTD4865N NTD4865N/D 65NG 48 65NG	PDF
65NG Abstract: 49 65NG 4965ng NTD4965NT4G Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	NTD4965N NTD4965N/D 65NG 49 65NG 4965ng NTD4965NT4G	PDF
V68A Abstract: No abstract text available Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	NTD4965N NTD4965N/D V68A	PDF
65NG Abstract: 48 65NG 369D Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	NTD4865N NTD4865N/D 65NG 48 65NG 369D	PDF
65NG Abstract: 369D NTD4865NT4G Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	NTD4865N NTD4865N/D 65NG 369D NTD4865NT4G	PDF
49 65NG Abstract: 4965ng 65NG 4965n NTD4965N-35G NTD4965NT4G mosfet 126 NTD4965N 369D-01 369D Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility	Original	NTD4965N NTD4965N/D 49 65NG 4965ng 65NG 4965n NTD4965N-35G NTD4965NT4G mosfet 126 NTD4965N 369D-01 369D	PDF
65NG Abstract: 58 65NG 48 65NG Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol	Original	NTD5865N NTD5865N/D 65NG 58 65NG 48 65NG	PDF