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Aker Technology Company Ltd S73303T-65.536-X-R OSC 65.536MHZ 3.3V CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	S73303T-65.536-X-R	Cut Tape	981		1	1 $1.35 10 $1.173 100 $1.0197 1000 $0.92448 10000 $0.92448	Buy Now
	S73303T-65.536-X-R	Digi-Reel	981		1	1 $1.43 10 $1.23 100 $1.061 1000 $0.95764 10000 $0.95764	Buy Now
	S73303T-65.536-X-R	Reel			1,000	1 - 10 - 100 - 1000 $0.88626 10000 $0.77048	Buy Now
SiTime Corporation SiT8103AC-22-33E-65.53600X Standard Clock Oscillators -20 to 70C, 3225, 25ppm, 3.3V, 65.536MHz, OE, 250 pcs T&R 12/16 mm
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Mouser Electronics	SiT8103AC-22-33E-65.53600X					1 - 10 - 100 - 1000 $4.92 10000 $4.92	Get Quote
SiTime Corporation SiT3907AC-22-33NH-65.536000X Specialty Oscillators -20 to 70C, 3225, 25ppm, 3.3V, 65.536MHz, 200 PPM PR, 250 pcs T&R 12/16 mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SiT3907AC-22-33NH-65.536000X					1 - 10 - 100 - 1000 $6.34 10000 $6.34	Get Quote
Aker Technology Company Ltd S73310T-65.536-X-15-R S7 Series 65.536 MHz 7 x 5 mm 3.3 V �100 ppm SMT Low Profile Clock Oscillator
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
New Advantage Corporation	S73310T-65.536-X-15-R		2,000		1	1 - 10 - 100 - 1000 $0.9929 10000 $0.9267	Buy Now

65536X Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
24512A Abstract: No abstract text available Text: W24512A W in b o n d - - ; ^ ^ y 64K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536x 8 bits that operates on a single 5-volt power supply. This device Is manufactured using Winbond’s high performance CMOS	OCR Scan	W24512A W24512A 65536x 500mW 32-pin 400mil 300mil A0-A15 24512A	PDF
16PIN Abstract: 51C64H-12 51C64H-8 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15 Text: - 172 — 64K A • m m m % it £ OC TRCY TCAD TAH TRAC max n s) ■ in (n s) CMOS Dynamic 4 7 f y / U f t ■ in (n s) ■in (n s) TP ■ in (n s) TWCY (n s) RAM(65536x1) m « TC'H ■in (n s) TfiWC n in (n s) VDD o r VCC (V) IDD nax (aA) À ID D STANDBY	OCR Scan	65536x1) 16PIN 51CB4H-10 51C64H-12 51C64H-8 51CB4HL-1D HY5164-15 V51C64-10 V51C64-12 V51C64-15 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15	PDF
29F100T Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100 Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz	Original	MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/21/1999 JUN/14/2001 29F100T 1 MEGA OHM RESISTOR MX29F100T 29f100	PDF
CY7C1298A Abstract: GVT7164C18 Text: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry	Original	CY7C1298A/ GVT7164C18 CY7C1298A/GVT7164C18 65536x18 CY7C1315A CY7C1298A CY7C1298A GVT7164C18	PDF
MX29F100T Abstract: No abstract text available Text: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current	Original	MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte FEB/04/1999 PM0548 MX29F100T	PDF
29F100T Abstract: No abstract text available Text: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz	Original	MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0548 29F100T	PDF
Untitled Abstract: No abstract text available Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz	Original	MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte CompatiPM0548 DEC/21/1999	PDF
Untitled Abstract: No abstract text available Text: G E C P L E S S E Y ma9287 S L M I C O N L l i C T O R S Radiation Hard 65536x1 Bit Static RAM Preliminary Data) S 1 0 3 0 3 P D S Issu e 2.3 O c t o b e r 1990 Features • 1.5pm CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 106 rad (Si)	OCR Scan	ma9287 65536x1 MA9287 65536x1 MA9287_	PDF
Untitled Abstract: No abstract text available Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz	Original	MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/14/2001 NOV/12/2001	PDF
65536X8 Abstract: No abstract text available Text: jm i « im W23512 Winbond /iTTTTX 64K X 8 MASK ROM DESCRIPTION FEATURES The W23512 i s a • Power Consumption : High Speed Mask-Programm A c tiv e : 150mW T y p . a b le Read-Only Memory O rganized as 65536X Standby : 25mW(Typ.) 8 B it s and •A c c e s s Time : 200/250 ns (Max.)	OCR Scan	150mW W23512 65536X B-1930 65536X8	PDF
61256P Abstract: 61256F HN61256 HN61256P H*61256 Text: HN61256P, HN612S6FP 327 6 8 x 8-bit or 655 3 6 x 4-bit CMOS Mask Programmable Read Only Memory The Hitachi HN61256P/FP is a mask programmable 32768 x 8 -b it or 65536x4-bit CMOS read only memory. It operates from a single power supply and is compatible w ith T T L . Low power consumption	OCR Scan	HN61256P, HN612S6FP HN61256P/FP 65536x4-bit IS2074® 61256P 61256F HN61256 HN61256P H*61256	PDF
Untitled Abstract: No abstract text available Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz	Original	MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte 80ms-- 80us--	PDF
Untitled Abstract: No abstract text available Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz	Original	MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/14/2001 NOV/12/2001	PDF
Untitled Abstract: No abstract text available Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz	Original	MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte single-pow003 PM0548	PDF

Untitled Abstract: No abstract text available Text: G E C P L E S S E Y ma9187 — !t— — MB— • — — Radiation Hard 65536x1 Bit Static RAM Preliminary Data S10309PDS Issue 2.3 October 1990 Features • 1.5\|im CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 10* rad (Si)	OCR Scan	ma9187 65536x1 S10309PDS MA9187 65536x1 Cobalt-60	PDF
Untitled Abstract: No abstract text available Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz	Original	MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte 80us-- 100us	PDF
x7ta Abstract: No abstract text available Text: fTÍTrK Winbond 64K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536x8 bits that operates on a single 5-volt pow er supply. This device is manufactured using W inbond’s high performance CMOS	OCR Scan	W24512A 65536x8 500mW 32-pin 400mil 300mil W24512A W24512AK-15 W24512AK-20 W24512AJ-15 x7ta	PDF
CY7C1298A Abstract: GVT7164C18 Text: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry	Original	CY7C1298A/ GVT7164C18 CY7C1298A/GVT7164C18 65536x18 CY7C1315A CY7C1298A CY7C1298A GVT7164C18	PDF
VS1003 Abstract: No abstract text available Text: VS1003 VS1003 - MP3/WMA AUDIO CODEC Features Description • Decodes MPEG 1 & 2 audio layer III CBR +VBR +ABR ; WMA 4.0/4.1/7/8/9 all profiles (5-384kbit/s); WAV (PCM + IMA ADPCM); General MIDI / SP-MIDI files • Encodes IMA ADPCM from microphone or line input	Original	VS1003 VS1003 5-384kbit/s) FI-33720	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	16-BIT M16C/29 REJ09B0101-0112	PDF
AX 1668 F 24 pin Abstract: No abstract text available Text: SMJ27C512 65536 BY 8-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS019D - SEPTEMBER 1987 - REVISED OCTOBER 1997 Organization . . . 65536 by 8 Bits J PACKAG E High-Reiiabiiity MIL-PRF-38535 Processing T O P V IE W Single 5-V Power Supply A15[ Pin-Compatible With Existing 512K	OCR Scan	SMJ27C512 SGMS019D MIL-PRF-38535 27C512-15 27C512-20 27C512-25 27C512-30 AX 1668 F 24 pin	PDF
tc 106-10 Abstract: smd transistor w J 3 58 bts 425 l1 transistor SMD p02 smd diode p126 P56. smd 013A1 B15 diode smd diode DB 3 C F2N SMD Text: REJ09B0034-0131 16/32 M32C/83 Group M32C/83, M32C/83T Hardware Manual RENESAS 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 SERIES Before using this material, please visit our website to verify that this is the most current document available.	Original	REJ09B0034-0131 M32C/83 M32C/83, M32C/83T) 16/32-BIT M32C/80 tc 106-10 smd transistor w J 3 58 bts 425 l1 transistor SMD p02 smd diode p126 P56. smd 013A1 B15 diode smd diode DB 3 C F2N SMD	PDF
MH1SS1 Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: STR71xFxx STR710RZ ARM7TDMI 32-bit MCU with Flash, USB, CAN, 5 timers, ADC, 10 communication interfaces Features • ■ Core – ARM7TDMI 32-bit RISC CPU – 59 MIPS @ 66 MHz from SRAM – 45 MIPS @ 50 MHz from Flash LQFP64 10 x 10 Memories – Up to 256 Kbytes Flash program memory	Original	STR71xFxx STR710RZ 32-bit LQFP64	PDF

65536X Search Results

65536X Price and Stock

Aker Technology Company Ltd S73303T-65.536-X-R

SiTime Corporation SiT8103AC-22-33E-65.53600X

SiTime Corporation SiT3907AC-22-33NH-65.536000X

Aker Technology Company Ltd S73310T-65.536-X-15-R

65536X Datasheets Context Search

24512A

16PIN

29F100T

CY7C1298A

MX29F100T

29F100T

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65536X8

61256P

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x7ta

CY7C1298A

VS1003

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AX 1668 F 24 pin

tc 106-10

MH1SS1

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