Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage
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OCR Scan
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IDT6168SA
IDT6168LA
15/20/25/35/45ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
M1L-STD-883,
IDT6168
384-bit
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PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage
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Original
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IDT6168SA
IDT6168LA
25/45ns
15/20/25ns
IDT6168LA
20-pin
MIL-STD-883,
IDT6168SA/LA
x4033
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PDF
|
ATPA
Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C
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Original
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CY2147-35C
CY7C147-35C
CY7C147-45C
CY91L22-35C
CY7C122-35C
CY2147-45C
CY7C148-35C
CY7C148-25C+
ATPA
7130SA100P
24l01
7C263/4-35C
7164S15Y
cy9122-25
7133SA35J
7142sa55
7130sa55p
cy2149-45c
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PDF
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idt6168sa
Abstract: IDT6168 6168LA45
Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage
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Original
|
25/45ns
15/20/25ns
IDT6168LA
20-pin
MIL-STD-883,
IDT6168SA
IDT6168LA
IDT6168
384-bit
6168LA45
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PDF
|
81c78
Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M
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Original
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2147-35C
2147-45C
2147-45M+
2147-55C
2147-55M
2148-35C
2148-35M
2148-45C
81c78
7C291
5962-8515505RX
27PC256-12
PAL164A
8464C
5C6408
72018
39C10B
MACH110 cross reference
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PDF
|
5962-86705
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption
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OCR Scan
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IDT6168SA
IDT6168LA
12/15/20/25/35/45/55/70/85/100ns
10/12/15/20/25/35ns
1DT6168SA
225mW
100nW
IDT6168LA
5962-86705
|
PDF
|
IDT6168
Abstract: IDT6168LA IDT6168SA
Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage
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Original
|
IDT6168SA
IDT6168LA
25/45ns
15/20/25ns
IDT6168LA
20-pin
MIL-STD-883,
IDT6168SA/LA
x4033
IDT6168
IDT6168SA
|
PDF
|
3090
Abstract: IDT6168 IDT6168LA IDT6168SA
Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage
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Original
|
IDT6168SA
IDT6168LA
25/45ns
15/20/25ns
IDT6168LA
20-pin
MIL-STD-883,
IDT6168SA/LA
3090
IDT6168
IDT6168SA
|
PDF
|
1DT6168SA
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage
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OCR Scan
|
IDT6168SA
IDT6168LA
15/20/25/35/45ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
IDT6168
384-bit
1DT6168SA
|
PDF
|
IDT6168
Abstract: IDT6168LA IDT6168SA
Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage
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Original
|
IDT6168SA
IDT6168LA
15/20/25/35/45ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
IDT6168
384-bit
IDT6168SA
|
PDF
|
DSC1121
Abstract: IDT6168 300mil SO20 Package IDT6168LA IDT6168SA
Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption
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Original
|
IDT6168SA
IDT6168LA
15/20/25/35/45/55/70/85/100ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
DSC1121
IDT6168
300mil SO20 Package
IDT6168SA
|
PDF
|
IDT6168
Abstract: IDT6168LA IDT6168SA 6168LA35 6168SA 6168SA20
Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage
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Original
|
IDT6168SA
IDT6168LA
15/20/25/35/45ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
IDT6168
384-bit
IDT6168SA
6168LA35
6168SA
6168SA20
|
PDF
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2Y202
Abstract: dt6168 1N12J
Text: § d t Integrated DevteTfechnology. Inc CMOS STATIC RAM 16K 4K x 4-BIT) ID T 6 1 6 8 S A ID T 6 1 6 8 L A FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-blt h ig h -sp ee d s ta tic RAM organized as 4 K x 4 . It Is fa b ric a te d u s in g ID T’s hig h -p erform a n ce, high-rellability te c h n o lo g y -C E M O S . T h is state-of-the-art te ch n olo gy, c o m
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OCR Scan
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2/15/20/25/35ns
IDT6168SA
100pW
IDT6168LA
T6168LA
20-pin
IDT61088A
/lDT6168LA
MIL-STD-883,
2Y202
dt6168
1N12J
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PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed (equal access and cycle time) — Military: 1 2 /1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00ns (m ax.) — Com mercial: 1 0 /1 2 /1 5/2 0 /2 5 /3 5 n s (max.)
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OCR Scan
|
IDT6168SA
IDT6168LA
T6168LA
20-pin
20-pin
IDT6168SA/LA
MIL-STD-883,
|
PDF
|
|
|
d1994
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption
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OCR Scan
|
IDT6168SA
IDT6168LA
15/20/25/35/45/55/70/85/100ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
d1994
|
PDF
|
27HC642
Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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Original
|
2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
27HC642
39C10B
PAL22V10APC
CY2254SC-1
7132SA70
93L422AM
7024S15
7130SA25
7C198-45C
7006S
|
PDF
|
29S5
Abstract: No abstract text available
Text: IN T E GR AT ED DEVI CE SflE D CMOS STATIC RAM 16K 4Kx 4-BIT 4Ö 25 771 001 154 0 247 IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 1 2 /15/2 0/25 /35/45/5 5/70 /85/100ns (max.)
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OCR Scan
|
IDT6168SA
IDT6168LA
10/12/15/20/25/35ns
IDT6168LA
20-pin
IDT6168SA/LA
29S5
|
PDF
|
s431 ac
Abstract: s431 A95E
Text: mE INTEGRATED DEVICE D HÖ25771 □ 0 0 3 5 £i3 7 IDT 6168SA IDT 6168LA CMOS STATIC RAM 1 6K 4K x 4-BIT T - H h ' 1 3 - ö Z FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) Tiie IDT6168 Isa 16,384-blt high-speed static RAM organized as
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OCR Scan
|
6168SA
6168LA
15/20/25/35/45/55/70/85/100ns
12/15/20/25/35ns
IDT6168SA
225mW
100pW
IDT6168LA
s431 ac
s431
A95E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA 1DT6168LA Integrated Device Technology, Inc. nology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 10ns are available. The circuit also
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OCR Scan
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IDT6168SA
1DT6168LA
12/15/20/25/35/45/55/70/85/100ns
10/12/15/20/25/35ns
IDT6168LA
20-pin
20pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated D evice Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15 /2 0 /2 5 /3 5 /4 5 n s (m ax.) — Com mercial: 15 /20/2 5/35 n s (m ax.) • Low power consumption
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OCR Scan
|
IDT6168SA
IDT6168LA
20-pin
384-bit
200mV
300mll
P20-1)
D20-1)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage
|
Original
|
25/45ns
15/20/25ns
IDT6168LA
20-pin
MIL-STD-883,
IDT6168SA
IDT6168LA
IDT6168
384-bit
|
PDF
|
IDT6168
Abstract: IDT6168LA IDT6168SA
Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage
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Original
|
IDT6168SA
IDT6168LA
15/20/25/35/45ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
IDT6168
384-bit
IDT6168SA
|
PDF
|