610 PHILIPS Search Results
610 PHILIPS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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philips NTC thermistor 2322
Abstract: philips thermistor 2322 610
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/J25/85 philips NTC thermistor 2322 philips thermistor 2322 610 | |
Contextual Info: DEVELOPMENT DATA rm to This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. PCF86C410/610 FAMILY SINGLE-CHIP 8-BIT MICROCONTROLLER GENERAL DESCRIPTION The PCF86C410/610 fam ily o f microcontrollers is manufactured in an advanced CMOS technology. |
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PCF86C410/610 PCF86C410 PCF86C410: PCF86C610: PCF86C000 256an | |
diode 42B DO-35
Abstract: BA314
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BA314 DO-35) 7110fl2b 01GS30S diode 42B DO-35 BA314 | |
74 TTL PACKAGE OUTLINES
Abstract: MGA010 MMBD7000
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S1528 MGA010 SBV2-116 74 TTL PACKAGE OUTLINES MGA010 MMBD7000 | |
Philips FA 153Contextual Info: PACKAGE OUTLINES Page SOT78 TO-220AB 602 SOT82 603 SOT93B 604 SOT 186 605 SOT186A 606 SOT 199 607 SOT399 608 SOT429 609 SOT430 610 Philips Semiconductors High-voltage and Switching NPN Power Transistors Packa9e ouMines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead T0-220AB |
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O-220AB) OT93B OT186A OT399 OT429 OT430 T0-220AB O-220AB O-247 Philips FA 153 | |
IFBBContextual Info: Philips Semiconductors b b S 3T 31 0 Q 3 Q lb 4 610 M UHF push-pull power MOS transistor a n N AMER PHILIPS/DISCRETE FEATURES APX Product specification BLF547 bH E I PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures |
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BLF547 OT262A2 0D30172 MRB022 IFBB | |
JD 16
Abstract: ecg rectifier diode ECG605 1N415C diode 1N415C Z41A K596 595-AA 1N416E diode ecg 125
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0007E05 ECG605 ECG113A ECG120 ECG582 ECG581 O-220 1N415C 1N415E 1N416C JD 16 ecg rectifier diode ECG605 1N415C diode Z41A K596 595-AA 1N416E diode ecg 125 | |
philips NTC thermistor 2322Contextual Info: SERIES 6 1 0 -0 Disc NTC Therm istor R25 = 4 ohm to 33 ohm 1 Watt 10‘ 1 -25 25 50 75 100 ‘ 126 T 'C | DESCRIPTION The Series 610-0 NTC Thermistor is a leadless disc intended for general use. ELECTRICAL SPECIFICATIONS Dissipation.1 Watt, maximum |
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Contextual Info: 853-1268C O7434 .040 1.02 .030 (.76) 3 .170 (4.32) .150 (3.81) .058 (1.47) .072 (1.83) .025 (.64) o X 45 .015 (.38) 1 6 40 7 39 .650 (25.59) .610 (24.02) .012 (.30) .008 (.20) CL .675 (17.15) SQ. .640 (16.26) 17 29 .020 (.51) .014 (.36) .025 (.64) .004 (.10) |
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1268C 853-1268C O7434 5M-1982 44-PIN 254mm) 020mm) | |
FT-100 float switch
Abstract: PCF86C410P free computer hardware repairing notes 80C51 PCF86C410T pcb86c410
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PCF86C410/610 PCF86C410/610 PCF86C410 PCF86C410: PCF86C610: PCF86C000 M89-1329/CC FT-100 float switch PCF86C410P free computer hardware repairing notes 80C51 PCF86C410T pcb86c410 | |
Contextual Info: Philips Semiconductors Product specification BAND IV/V CIRCULATORS / ISOLATORS UP TO 200 W Preferred application: UHF television M AXIM UI M POW ER TYPE 2722162 DIM ENSIO NS Fig. 02691 02701 1 02401 2722 162 02751 02741 2722 162 02671 02681 2722 162 4 to 800 |
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BK639 | |
philips circulator 2722 162
Abstract: 2722 162 01561 2722 162 03811 Circulators Circulators/Isolators uhf circulator PC06 02681
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MBK640 MBK641 MBK642 MBK643 philips circulator 2722 162 2722 162 01561 2722 162 03811 Circulators Circulators/Isolators uhf circulator PC06 02681 | |
CIRCUIT DIAGRAM OF PHILIPS AMPLIFIER DH 892
Abstract: tda6101q LA 7811 Video Amplifier tda6101q BP317 philips om IR2136 ac 2092
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TDA6101Q SCD38 /1500/02/pp16 711Dfi2b CIRCUIT DIAGRAM OF PHILIPS AMPLIFIER DH 892 tda6101q LA 7811 Video Amplifier tda6101q BP317 philips om IR2136 ac 2092 | |
Contextual Info: Philips Sem iconductors Preliminary specification NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 1 RXB06150W SbE D • 7110fl2b D04bS42 ^ET FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium pulse applications up to |
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RXB06150W 7110fl2b D04bS42 FO-91B | |
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transistor B42Contextual Info: ^ -3 3 - 0 1 Philips Sem iconductors NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal Input prematching networks allow an easier design of circuits |
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RZB06050W 711DfiEti 711Dfl2b transistor B42 | |
RZB06050W
Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476
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RZB06050W FO-57C 711Dfi2fci T-33-09 RZB06050W transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476 | |
Contextual Info: N AUER PHILIPS/DISCRETE b lE b b S B ^ l OOSblSD fl71 BA314 D IAPX A LOW VOLTAGE STABISTOR W Z Silicon planar epitaxial diode in DO-35 envelope. This diode is intended for low voltage stabilizing e.g. bias stabilizer in class-B output stages, clipping, clamping and meter protection. |
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BA314 DO-35 | |
BA314
Abstract: MAM246 stabistor
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M3D176 BA314 DO-35) MAM246 BA314 MAM246 stabistor | |
stabistorContextual Info: DISCRETE SEMICONDUCTORS [MTTÆ i i l H l i l T BA314 Low-voltage stabistor Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 Philips Sem iconductors 1996 Mar 21 PHILIPS Philips Semiconductors Product specification |
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BA314 BA314 DO-35) MAM246 stabistor | |
MBA540
Abstract: antenna diversity switch fm antenna diversity fm phase diversity audio limiter ic antenna diversity T34 rectifier TEA6101 tea6101t TEA6100
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TEA6101/T OT102 OT163A May1992 MBA540 antenna diversity switch fm antenna diversity fm phase diversity audio limiter ic antenna diversity T34 rectifier TEA6101 tea6101t TEA6100 | |
D-25CF
Abstract: 3909
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39-60A 7110SEb 01i-state T-39-09 BUK539-60A 711DfiSb 0044b78 D-25CF 3909 | |
TDA4568
Abstract: r14 diode DIP18
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TDA4568 TDA4568 r14 diode DIP18 | |
VK 1760
Abstract: 7Z00 2000T tube cathodique PHILIPS reactance
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1000mA VK 1760 7Z00 2000T tube cathodique PHILIPS reactance | |
BFM520
Abstract: BFG403W BFE520 BFG505W BFG520W BFM505 BF547W BFC505 BFC520 BFE505
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BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFM520 BFG403W BFG505W BFG520W BFM505 |