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    60V TRANSISTOR NPN 2A SWITCHING APPLICATIONS Search Results

    60V TRANSISTOR NPN 2A SWITCHING APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    60V TRANSISTOR NPN 2A SWITCHING APPLICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD439

    Abstract: BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440 BD442
    Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol : BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V


    Original     		PDF BD439/441 O-126 BD440, BD442 BD439 BD441 BD439 BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440

    60V transistor npn 2a switching applications

    Abstract: 60V transistor npn 2a BD719 Audio Output Transistor Amplifier BD720
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD719 DESCRIPTION •DC Current Gain: hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V BR CEO= 60V(Min) ·Complement to type BD720 APPLICATIONS ·Designed for use in audio output and general purpose


    Original     		PDF BD719 BD720 60V transistor npn 2a switching applications 60V transistor npn 2a BD719 Audio Output Transistor Amplifier BD720

    Untitled

    Abstract: No abstract text available
    Text: BD439/441 BD439/441 Medium Power Linear and Switching Applications • Complement to BD440, BD442 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCES


    Original     		PDF BD439/441 BD440, BD442 O-126 BD439 BD441

    BD681 cross reference

    Abstract: bd677as BD679AS 679a
    Text: BD675A/677A/679A/681 BD675A/677A/679A/681 Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base


    Original     		PDF BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 O-126 BD675A BD677A BD679A BD681 cross reference bd677as BD679AS 679a

    120v relay driver

    Abstract: BFX34
    Text: BFX34 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT GENERAL PURPOSE TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION: The BFX34 is a silicon Epitaxial Planar NPN transistor in a TO-39 case, intended for high current applications.


    Original     		PDF BFX34 BFX34 120v relay driver

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X • High Power • Hermetic TO-66 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO


    Original     		PDF BDY71X O-213AA)

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X • High Power • Hermetic TO-66 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO


    Original     		PDF BDY71X O-213AA)

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD / BDS17SMD • High Voltage • Hermetic SMD1 TO-276AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS16SMD BDS17SMD O-276AB) BDS16 BDS17

    IC 9550

    Abstract: TO276AA
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD05 / BDS17SMD05 • High Voltage • Hermetic SMD05 TO-276AA Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS16SMD05 BDS17SMD05 SMD05 O-276AA) BDS16 BDS17 IC 9550 TO276AA

    Transistor 3-347

    Abstract: 3-347
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS16 BDS17 O220M T0-257AB) BDS17 O-257AB) Transistor 3-347 3-347

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD05 / BDS17SMD05 • High Voltage • Hermetic SMD05 TO-276AA Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS16SMD05 BDS17SMD05 SMD05 O-276AA) BDS16 BDS17

    flyback converter DC/DC 400V

    Abstract: NPN transistor 10w 1a vce 400v capacitor 100MF 100v 6V DC-AC Fluorescent lamp BY206 Lamps FLASH TUBE xenon inverter 12v to 220 ac mosfet based TL8W step up DC DC converter in 6v out 9V xenon inverter circuits
    Text: Application Note 7 Issue 2 January 1996 The Use of Zetex E-Line Transistors in DC-DC Converters An Introduction and Typical Applications David Bradbury What Are DC-DC Converters? DC-DC Converters are circuits designed to match loads to the power sources available. Generally, they accept power


    Original     		PDF ZTX850 /TO92 flyback converter DC/DC 400V NPN transistor 10w 1a vce 400v capacitor 100MF 100v 6V DC-AC Fluorescent lamp BY206 Lamps FLASH TUBE xenon inverter 12v to 220 ac mosfet based TL8W step up DC DC converter in 6v out 9V xenon inverter circuits

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS16 BDS17 O220M T0-257AB) BDS16 O-257AB)

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD / BDS17SMD • High Voltage • Hermetic SMD1 TO-276AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS16SMD BDS17SMD O-276AB) BDS16 BDS17

    60V transistor npn 2a switching applications

    Abstract: 2N6107 2N6292 60V transistor npn 2a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6292 DESCRIPTION •DC Current Gain: hFE = 30-150@ IC= 2A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 70V(Min) ·Complement to Type 2N6107 APPLICATIONS ·Designed for use in general-purpose amplifier and


    Original     		PDF 2N6292 2N6107 60V transistor npn 2a switching applications 2N6107 2N6292 60V transistor npn 2a

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR NPN TRANSISTOR 2N3421 • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO


    Original     		PDF 2N3421 Junc0396 O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR NPN TRANSISTOR 2N3421 • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO


    Original     		PDF 2N3421 Ju0396 O-205AD)

    Transistor B C 458

    Abstract: c 458 c transistor 60V transistor npn 2a switching applications bd533 Transistor n 535
    Text: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO-220 • Com plem ent to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C olle ctor Base Voltage C olle ctor Em itter Voltage


    OCR Scan     		PDF BD533/535/537 BD534, BD536 BD538 O-220 BD533 BD535 BD537 Transistor B C 458 c 458 c transistor 60V transistor npn 2a switching applications Transistor n 535

    60V transistor npn 2a switching applications

    Abstract: No abstract text available
    Text: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Symbol BD533 Rating


    OCR Scan     		PDF BD533/535/537 BD534, BD536 BD538 BD533 BD535 BD537 60V transistor npn 2a switching applications

    t460 transistor

    Abstract: 2N1724 60V transistor npn 2a switching applications i442 T460 2IM1724
    Text: IMPIM S ilic o n P o w e r T ra n sisto r 2IM1724 Application The SSDI 2N1724 is a NPN double epitaxial silicon power transistor designed for high reliability opera­ tion in military, space and indus­ trial applications. Fast switching speeds, low saturation voltages


    OCR Scan     		PDF 2IM1724 2N1724 200mA t460 transistor 60V transistor npn 2a switching applications i442 T460 2IM1724

    BD441

    Abstract: No abstract text available
    Text: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle cto r B ase Voltage C o lle cto r Em itter Voltage C o lle cto r Em itter V oltage


    OCR Scan     		PDF BD439/441 BD440, BD442 O-126 BD439 BD441

    BD681

    Abstract: BD677A 681 transistor bd681 TRANSISTOR
    Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD676A, BD678A, BD680A and BD682 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage


    OCR Scan     		PDF BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 BD675A BD677A BD679A BD681 681 transistor bd681 TRANSISTOR

    TRANSISTOR BC 456

    Abstract: BD441
    Text: BD439/441 NPN EPITAXIAL SILICON TRAN SISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively A B S O L U T E MAXIMUM RATINGS C h a ra c te ristic Collector B ase Voltage S ym bol BD439 Rating V cao BD441 Collector Emitter Voltage


    OCR Scan     		PDF BD439/441 O-126 BD440, BD442 BD439 BD441 BD441 TRANSISTOR BC 456

    Untitled

    Abstract: No abstract text available
    Text: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Symbol Collector Emitter Voltage : BD533


    OCR Scan     		PDF BD533/535/537_ BD534, BD536 BD538 BD533 BD535 BD537