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    60N3 Search Results

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    60N3 Price and Stock

    STMicroelectronics VNL5160N3TR-E

    IC PWR SWITCH N-CHAN 1:1 SOT223
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    DigiKey VNL5160N3TR-E Cut Tape 6,114 1
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    • 10 $0.763
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    • 1000 $0.54572
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    VNL5160N3TR-E Digi-Reel 6,114 1
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    VNL5160N3TR-E Reel 5,000 1,000
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    Avnet Americas VNL5160N3TR-E Reel 13 Weeks 2,000
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    Mouser Electronics VNL5160N3TR-E 1,743
    • 1 $1.06
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    • 1000 $0.502
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    Newark VNL5160N3TR-E Reel 2,000
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    STMicroelectronics VNL5160N3TR-E 1,743 1
    • 1 $1.04
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    Avnet Silica VNL5160N3TR-E 2,000 14 Weeks 1,000
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    EBV Elektronik VNL5160N3TR-E 14 Weeks 1,000
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    Vyrian VNL5160N3TR-E 2,469
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    Win Source Electronics VNL5160N3TR-E 148,250
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    Vishay Semiconductors SE60N3GHM3-I

    6A, 400V, STD , SM RECT,DFN33A
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    DigiKey SE60N3GHM3-I Cut Tape 6,000 1
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    SE60N3GHM3-I Digi-Reel 6,000 1
    • 1 $0.47
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    • 1000 $0.23874
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    SE60N3GHM3-I Reel 6,000 6,000
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    Vishay Semiconductors SE60N3G-M3-I

    DIODE STANDARD 400V 6A DFN33A
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    DigiKey SE60N3G-M3-I Digi-Reel 5,969 1
    • 1 $0.42
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    • 10000 $0.21108
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    SE60N3G-M3-I Cut Tape 5,969 1
    • 1 $0.42
    • 10 $0.264
    • 100 $0.42
    • 1000 $0.2156
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    Vishay Semiconductors VS-40CPQ060-N3

    DIODE ARR SCHOTT 60V 40A TO247AC
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    DigiKey VS-40CPQ060-N3 Tube 1,609 1
    • 1 $3.52
    • 10 $3.52
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    • 1000 $1.86762
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    New Advantage Corporation VS-40CPQ060-N3 10,800 1
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    Microchip Technology Inc VN2460N3-G

    MOSFET N-CH 600V 160MA TO92-3
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    DigiKey VN2460N3-G Bag 605 1
    • 1 $1.5
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    Microchip Technology Inc VN2460N3-G Bag 12,000 7 Weeks
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    NAC VN2460N3-G Bag 1,000
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    Avnet Silica VN2460N3-G 6 Weeks 1,000
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    Master Electronics VN2460N3-G 625
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    • 1000 $1.097
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    Find more 60N3 price and stock on Findchips.com

    60N3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 60N35A9 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current600m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage3.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage4.0 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)25


    Original     		60N35A9 Current600m Current200u PDF

    60n3

    Abstract: STD60N3LH5
    Text: 60N3LH5 N-channel 30 V, 0.0072 Ω typ., 48 A STripFET V Power MOSFET in a DPAK package Datasheet - not recommended for new design Features Order code VDS @ Tjmax RDS on max 60N3LH5 TAB 35 V ID 0.008 Ω 48 A • RDS(on) * Qg industry benchmark 3 • Extremely low on-resistance RDS(on)


    Original     		STD60N3LH5 DocID14079 60n3 STD60N3LH5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 60N32N3LL Dual N-channel 30 V, 0.005 Ω, 15 A PowerFLAT 5x6 asymmetrical double island, STripFET™ Power MOSFET Preliminary data Features Type 60N32N3LL VDSS RDS on ID Q1 30 V < 0.0095 Ω 13.6 A Q2 30 V < 0.0075 Ω 15 A • RDS(on) * Qg industry benchmark


    Original     		STL60N32N3LL PDF

    60n3l

    Abstract: STL60N3LLH5 MERIT INCH
    Text: 60N3LLH5 N-channel 30 V, 0.0063 Ω, 17 A PowerFLAT 5x6 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID 60N3LLH5 30 V <0.0071 Ω 17 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		STL60N3LLH5 60n3l STL60N3LLH5 MERIT INCH PDF

    60n3l

    Abstract: STD60N3LH5-H 60N3LH5 ISD24 60n3 ecopack2 60N3LH5 DPAK
    Text: 60N3LH5-H N-channel 30 V, 0.0072 Ω, 48 A DPAK STripFET V Power MOSFET Features Type VDSS RDS on max ID 60N3LH5-H 30 V 0.008 Ω 48 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge


    Original     		STD60N3LH5-H 60n3l STD60N3LH5-H 60N3LH5 ISD24 60n3 ecopack2 60N3LH5 DPAK PDF

    60n3l

    Abstract: 60N3LH5 60N3 STD60N3LH5 STU60N3LH5 STP60N3LH5
    Text: 60N3LH5, 60N3LH5 60N3LH5, 60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features • ■ Order codes VDSS RDS on max ID 60N3LH5 30 V 0.008 Ω 48 A 60N3LH5 30 V 0.0084 Ω 48 A 60N3LH5


    Original     		STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S O-220 STU60N3LH5 STD60N3LH5 60n3l 60N3LH5 60N3 STD60N3LH5 STU60N3LH5 STP60N3LH5 PDF

    st marking code

    Abstract: 60n32n3ll 60N32 STL60N32N3ll
    Text: 60N32N3LL Dual N-channel 30 V, 0.006 Ω, 15 A PowerFLAT 5x6 asymmetrical double island, STripFET™ Power MOSFET Target specification Features Type 60N32N3LL VDSS RDS on ID Q1 30 V < 0.012 Ω 12 A Q2 30 V < 0.008 Ω 15 A • RDS(on) * Qg industry benchmark


    Original     		STL60N32N3LL st marking code 60n32n3ll 60N32 STL60N32N3ll PDF

    60N40

    Abstract: 60N3S ST T4 0580 MO-040AA MTE50N50 D7828 WCLA MTE60N40 60n4 motorola 1046
    Text: MOTOROLA SC Î X S T R S / R F> b4 ]>Ejt:3b7aS4 GDtfina I 1 MOTOROLA T-39-15 SEMICONDUCTOR TECHNICAL DATA M TE50N45 M TE50N50 M 60N35 M TE60N40 Designer's Data Sheet Pow er Field Effect Transistor IU-Channel Enhancem ent M ode Silicon G ate TMOS TMOS POWER FETs


    OCR Scan     		T-39-15 TE50N45 TE50N50 TE60N35 TE60N40 100/tH, D7828 MTE50N45 MTE50N50 MTE60N35 60N40 60N3S ST T4 0580 MO-040AA MTE50N50 D7828 WCLA MTE60N40 60n4 motorola 1046 PDF

    STL60N32N3LL

    Abstract: No abstract text available
    Text: 60N32N3LL Dual N-channel 30 V, 0.005 Ω, 15 A PowerFLAT 5x6 asymmetrical double island, STripFET™ Power MOSFET Features Order code 60N32N3LL • VDSS Q1 Q2 RDS on ID 30 V < 0.0092 Ω 13.6 A 30 V < 0.0055 Ω 15 A 4 3 2 1 S1/D2 RDS(on) * Qg industry benchmark


    Original     		STL60N32N3LL STL60N32N3LL PDF

    N4111

    Abstract: Sensick ds 60 Sensick ds 60 dtr ir Sensick Sensick Sensors DS 60 DtR IR Sensick Sensors distance sensor diamond grade reflective tape Sensick DS 50 P412
    Text: DS 60 Distance sensors Distance sensors Proximity mode DS 60: The solution for large scanning distances Distance sensors Reflector mode During development of the DS 60, emphasis was placed on satisfying user requirements such as, compact design, two invertable


    Original     		60-P11121 60-N11121 N4111 Sensick ds 60 Sensick ds 60 dtr ir Sensick Sensick Sensors DS 60 DtR IR Sensick Sensors distance sensor diamond grade reflective tape Sensick DS 50 P412 PDF

    60N3LH5

    Abstract: 60n3l STP60N3LH5 STU60N3LH5 STD60N3LH5 ISD24
    Text: 60N3LH5 60N3LH5, 60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS on max ID 60N3LH5 30 V 0.008 Ω 48 A 60N3LH5 30 V 0.0084 Ω 48 A 60N3LH5 30 V 0.0084 Ω 48 A • RDS(on) * Qg industry benchmark


    Original     		STD60N3LH5 STP60N3LH5, STU60N3LH5 O-220 STP60N3LH5 60N3LH5 60n3l STP60N3LH5 STU60N3LH5 STD60N3LH5 ISD24 PDF

    60n3l

    Abstract: 60N3LH5 STD60N3LH5
    Text: 60N3LH5 60N3LH5 N-channel 30V - 0.0072Ω - 48A - DPAK - IPAK STripFET V Power MOSFET Features Type VDSS RDS on Max ID 60N3LH5 30V 0.008Ω 48A 60N3LH5 30V 0.0084Ω 48A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		STD60N3LH5 STU60N3LH5 60n3l 60N3LH5 PDF

    sick DS 50

    Abstract: DOS-1205-G BEF-WN-DS60 infrared power led 3w DOL-1205-G05M SICK distance sensor led SICK distance sensor gra101 DOL-1205-G10M 60-P41111-S03
    Text: T E C H N I C A L D E S C R I P T I O N TB_DS60_en.QXP 27.07.2002 13:56 Uhr Seite 1 DS 60 D i s t a n ce Sensor TB_DS60_en.QXP 27.07.2002 13:56 Uhr Seite 2 DS 60 Distance Sensor Application Field The DS 60 distance sensors operate according to the principle of time of flight


    Original     		110th sick DS 50 DOS-1205-G BEF-WN-DS60 infrared power led 3w DOL-1205-G05M SICK distance sensor led SICK distance sensor gra101 DOL-1205-G10M 60-P41111-S03 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    60N40

    Abstract: GM 950 motorola MO-040AA 040-AA 60n3 Motorola b4 50N50 MTE50N45 MTE50N50 MTE60N35
    Text: MOTOROLA SC ÌXSTRS/R F> L4 DE~| b 3 t,72S4 O Dtfinfl r T MOTOROLA T-39-15 S E M IC O N D U C T O R TECHNICAL DATA M TE50N 45 M TE50N 50 M TE60N 35 MTE60IM40 Designer's Data Sheet P o w e r F ield E ffe c t T r a n s is t o r IM-Channel Enhancem ent M od e Silico n Gate T M O S


    OCR Scan     		T-39-15 MTE50N45 MTE50N50 MTE60N35 MTE60IM40 mc14001 100/th, d7828 MTE50N45 MTE50N50 60N40 GM 950 motorola MO-040AA 040-AA 60n3 Motorola b4 50N50 PDF

    Sensick ds 60 dtr ir

    Abstract: Sensick DS 50 Sensick ds 60 short distance measurement ir infrared diode diode catalogue 60N11 "infrared distance sensor" 2000 60-P41311 Sensick Sensors DS 60 DtR IR Sender DS
    Text: Lichtschranken Lichtschranken Baureihe Baureihe WL WL27-2 27-2 DS 60 Distance sensors Distance sensors Proximity mode Distance sensors Reflector mode DS 60: The solution for large scanning distances During development of the DS 60, emphasis was placed on satisfying user requirements such as,


    Original     		60-P11121 60-N11121 Sensick ds 60 dtr ir Sensick DS 50 Sensick ds 60 short distance measurement ir infrared diode diode catalogue 60N11 "infrared distance sensor" 2000 60-P41311 Sensick Sensors DS 60 DtR IR Sender DS PDF

    n4111

    Abstract: SICK distance sensor SICK m12 5 pins 60-P41111 WSG1-01 60-P31311 "IR distance Sensor" 60-P11121 60-P41311 N4121
    Text: D i s t a n ce Sensor DS 60 T E C H N I C A L D E S C R I P T I O N Distance Sensor DS 60 Application Field The DS 60 distance sensors operate according to the principle of time of flight measurement. The compact sensor makes large and adjustable scanning distances possible with very precise distance detection.


    Original     		110th M12x1 n4111 SICK distance sensor SICK m12 5 pins 60-P41111 WSG1-01 60-P31311 "IR distance Sensor" 60-P11121 60-P41311 N4121 PDF

    60n3l

    Abstract: 60N3LH5 60n3 STU60N3LH5 JESD97 STD60N3LH5 smd diode marking b6 ISD24 60N3LH5 DPAK
    Text: 60N3LH5 60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A - DPAK - IPAK STripFET V Power MOSFET Features Type VDSS RDS on Max ID 60N3LH5 30V 0.008Ω 48A 60N3LH5 30V 0.0084Ω 48A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		STD60N3LH5 STU60N3LH5 60n3l 60N3LH5 60n3 STU60N3LH5 JESD97 STD60N3LH5 smd diode marking b6 ISD24 60N3LH5 DPAK PDF