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    Untitled

    Abstract: No abstract text available
    Text: 60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)


    Original     		GT60M324 15mitation, PDF

    60M324

    Abstract: No abstract text available
    Text: 60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)


    Original     		GT60M324 60M324 PDF

    60M324

    Abstract: GT60M324 60M32
    Text: 60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)


    Original     		GT60M324 60M324 GT60M324 60M32 PDF