600V 8A ULTRA FAST RECOVERY DIODE TO220 Search Results

STTA806DI

Abstract: STTA806D
Contextual Info: STTA806D I  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.

smps with uc3842 and tl431

Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Contextual Info: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES

600v 10A ultra fast recovery diode

Abstract: HUR20100CT fast recovery diode 600v 12A HUR20120CT fast recovery diode 600v 5A
Contextual Info: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM

600v 10A ultra fast recovery diode

Abstract: HUR10100 HUR10120
Contextual Info: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G

600v 10A ultra fast recovery diode

Abstract: fast recovery diode 600v 12A HUR20100CT 10A, 100v fast recovery diode 10a ultra fast diode HUR20120CT fast recovery diode 600v 5A ultra fast recovery time diode
Contextual Info: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM

600v 10A ultra fast recovery diode

Abstract: sonic cleaner HUR10100 HUR10120 fast recovery diode 600v 5A 600v 10A ultra fast recovery diode to-220ac ultra fast recovery time diode
Contextual Info: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G

CM6805

Contextual Info: CMPFCD86 PFC Diode 8A/600V FEATURES ‹ ‹ ‹ ‹ ‹ ‹ Fast switching for high efficiency Low noise Trr ~ 25ns Ultra low reverse leakage current High voltage ultra faster diode PFC application High inrush current K A CMPFCD86 (TO-220AC) K MECHANICAL DATA

Contextual Info: APT11GF120KR G 1200V TYPICAL PERFORMANCE CURVES APT11GF120KR APT11GF120KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.

APT11GF120KRG

Abstract: APT11GF120KR 600v 8A ultra fast recovery diode to220
Contextual Info: APT11GF120KR G 1200V TYPICAL PERFORMANCE CURVES APT11GF120KR APT11GF120KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.

HFA06TB60

Abstract: HFA08TB60 diode hfa08tb60 revers characteristic transistor revers characteristic ir 908c SL-2341 32
Contextual Info: PD-2.341 International \1QRIRectifier HEXFRED Provisional Data Sheet HFA08TB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Features; Units Vr V r rm 600 V If a v 6 A trr (typ) 18 ns On- (typ) 65 Jrrm difrec)M/dt (tvoi

MOSFET 1000v 30a

Abstract: W210PIV400 mosfet 600V 100A MOSFET 1200v 30a MOSFET welding INVERTER welding inverter 100A UC3842 mosfet 600V 30A 1200v 30A to247 W210PIV STGW50N60
Contextual Info: WELDING STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Primary Secondary Inverter RECOMMENDED DEVICES MAIN FEATURES Mains BF3506TV / BF3510TV BHA/K3012TV MSSxx / MDSxx BTW68-xxx / BTW69-xxx Input Rect. Bridge - 600V/35A; 1000V/35A Input Rect. Bridge - 1200V/30A 3-ph.

stepper motor driver full bridge 6A

Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
Contextual Info: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx

f08s60sn

Abstract: TT2202 TT220 F08S f08s60
Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

f08s60sn

Abstract: TT2202 2202L FFP08S60SNTU f08s60
Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

F08S60SN

Abstract: FFP08S60SNTU FFP08S60SN TO220-2L diode 8a 600v C200300
Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

IRGB4060D

Abstract: IRF1010 CT4-15
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 8.0A, TC = 100°C Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

Contextual Info: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

IRF1010

Abstract: 8A2021
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: STEALTHTM II Rectifier FFPF08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFPF08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: ISL9R860P2, ISL9R860S3ST 8A, 600V Stealth Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

f08s60sn

Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
Contextual Info: STEALTHTM II Rectifier FFPF08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFPF08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

TO254P1524X482

Abstract: ISL9R860P2 ISL9R860S2 ISL9R860S3S ISL9R860S3ST R860P2 TB334 600v 8A ultra fast recovery diode to220
Contextual Info: ISL9R860P2, ISL9R860S2, ISL9R860S3ST 8A, 600V Stealth Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

R860P2

Abstract: TA49409 TO254P1524X482 ISL9R860P2 ISL9R860S2 ISL9R860S3S ISL9R860S3ST TB334 R860P
Contextual Info: ISL9R860P2, ISL9R860S3ST 8A, 600V Stealth Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current