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    600V 5A Search Results

    600V 5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    600V 5A Price and Stock

    Honeywell Sensing and Control AWM43600V-2

    Flow Sensors AIR FLOW SENSOR 6 SLPM FEMALE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AWM43600V-2 76
    • 1 $167.85
    • 10 $161.93
    • 100 $161.93
    • 1000 $161.93
    • 10000 $161.93
    Buy Now

    Fluke Corporation FUSE-15A/600V-25

    Fuse Kits & Assortments Fuse, Fast 15A 600V Lot Qty 25
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FUSE-15A/600V-25
    • 1 $145.9
    • 10 $145.9
    • 100 $145.9
    • 1000 $145.9
    • 10000 $145.9
    Get Quote

    Carlo Gavazzi Holding AG GCA95A600VAC60HZ

    Industrial Relays Replacement coil for CC75, CC85 and CC95 contactors, 600VAC 60Hz.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GCA95A600VAC60HZ
    • 1 $43.7
    • 10 $41.51
    • 100 $38.01
    • 1000 $38.01
    • 10000 $38.01
    Get Quote

    600V 5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GF10NC60

    Abstract: GP10NC60KD gf10nc STGF10NC60KD STGB10NC60KD STGB10NC60KDT4 STGP10NC60KD GB10NC60KD GF10NC60KD JESD97
    Text: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V


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    PDF STGB10NC60KD STGF10NC60KD STGP10NC60KD O-220 O-220FP STGF10NC60KD O-220 GF10NC60 GP10NC60KD gf10nc STGB10NC60KD STGB10NC60KDT4 STGP10NC60KD GB10NC60KD GF10NC60KD JESD97

    GP10NC60KD

    Abstract: GF10NC60KD GB10NC60KD STGP10NC60KD STGB10NC60KDT4 JESD97 STGB10NC60KD STGF10NC60KD GB10NC60K GF10NC60
    Text: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V


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    PDF STGB10NC60KD STGF10NC60KD STGP10NC60KD O-220 O-220FP STGF10NC60KD O-220 GP10NC60KD GF10NC60KD GB10NC60KD STGP10NC60KD STGB10NC60KDT4 JESD97 STGB10NC60KD GB10NC60K GF10NC60

    GP10NC60KD

    Abstract: STGP10NC60KD gf10nc60kd RG 2006 10A 600V GF10N ST IGBT code marking STGF10NC60KD gp10nc60
    Text: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V


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    PDF STGB10NC60KD STGF10NC60KD STGP10NC60KD O-220 O-220FP STGF10NC60KD O-220 GP10NC60KD STGP10NC60KD gf10nc60kd RG 2006 10A 600V GF10N ST IGBT code marking gp10nc60

    GF10NC60

    Abstract: gp10nc60 GP10NC60HD RG 2006 10A 600V gf10nc GF10NC60HD GF10N STGP10NC60HD GB10NC60HD JESD97
    Text: STGB10NC60HD - STGF10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT Features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A STGF10NC60HD 600V < 2.5V 6A


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    PDF STGB10NC60HD STGF10NC60HD STGP10NC60HD O-220 O-220FP STGB10NC60HD O-220 GF10NC60 gp10nc60 GP10NC60HD RG 2006 10A 600V gf10nc GF10NC60HD GF10N STGP10NC60HD GB10NC60HD JESD97

    gp10nc60k

    Abstract: RG 2006 10A 600V JESD97 STGB10NC60K STGB10NC60KT4 STGD10NC60K STGP10NC60K
    Text: STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60K STGP10NC60K STGD10NC60K 600V 600V 600v <2.5V <2.5V <2.5V 10A 10A 10A


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    PDF STGB10NC60K STGD10NC60K STGP10NC60K O-220 STGB10NC60K O-220 gp10nc60k RG 2006 10A 600V JESD97 STGB10NC60KT4 STGD10NC60K STGP10NC60K

    YG972S6

    Abstract: TO-220F torque ips circuit diagram YG972S6R TO-220F JEDEC YG971S6R PH967C6 YG971S6 PH965C6 YA975C6R
    Text: Super LLD For PFC circuit Device Type PH965C6 PH967C6 YA971S6R YA972S6R YA975C6R Features Super LLD(For PFC circuit) ‚hp 20A/600V Super LLD(For PFC circuit) ‚hp 30A/600V Super LLD2(For PFC circuit) ‚ho 8A/600V Super LLD2(For PFC circuit) ‚ho 10A/600V


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    PDF PH965C6 PH967C6 YA971S6R YA972S6R YA975C6R 0A/600V A/600V YG972S6 TO-220F torque ips circuit diagram YG972S6R TO-220F JEDEC YG971S6R PH967C6 YG971S6 PH965C6 YA975C6R

    CEF09N6

    Abstract: CEP09N6 CEB09N6
    Text: CEP09N6/CEB09N6 CEI09N6/CEF09N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP09N6 600V 1.2Ω 9A 10V CEB09N6 600V 1.2Ω 9A 10V CEI09N6 600V 1.2Ω 9A 10V CEF09N6 600V 1.2Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).


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    PDF CEP09N6/CEB09N6 CEI09N6/CEF09N6 CEP09N6 CEB09N6 CEI09N6 CEF09N6 O-220 O-263 O-262 O-220F CEF09N6 CEP09N6 CEB09N6

    gp10nc60hd

    Abstract: gp10nc60 GB10NC60HD STGP10NC60HD
    Text: STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1


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    PDF STGB10NC60HD STGP10NC60HD O-220 O-220 gp10nc60hd gp10nc60 GB10NC60HD STGP10NC60HD

    GP10NC60HD

    Abstract: GB10NC60HD RG 2006 10A 600V JESD97 STGB10NC60HD STGP10NC60HD GP10N gp10nc60
    Text: STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1


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    PDF STGB10NC60HD STGP10NC60HD O-220 O-220 GP10NC60HD GB10NC60HD RG 2006 10A 600V JESD97 STGB10NC60HD STGP10NC60HD GP10N gp10nc60

    RG 2006 10A 600V

    Abstract: STGB10NC60HDT4
    Text: STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1


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    PDF STGB10NC60HD STGP10NC60HD O-220 O-220 STGB10NC60HDT4 RG 2006 10A 600V

    SF5J42

    Abstract: SF5G42
    Text: SF5G42,SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42,SF5J42 Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V Average On−State Current : IT AV = 5A


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    PDF SF5G42 SF5J42 O-220AB SF5G42 SF5J42

    400v 15A thyristor

    Abstract: F5J41 SF5G41A SF5J41A 2f5g41
    Text: SF5G41A,SF5J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G41A, SF5J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A


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    PDF SF5G41A SF5J41A SF5G41A, SF5G41A 400v 15A thyristor F5J41 SF5J41A 2f5g41

    SF5J42

    Abstract: F5J42 SF5G42
    Text: SF5G42, SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42, SF5J42 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A


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    PDF SF5G42, SF5J42 O-220AB SF5G42 SF5J42 F5J42 SF5G42

    SF5J41

    Abstract: SF5G41 SF5G41A SF5J41A
    Text: SF5G41A,SF5J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G41A,SF5J41A Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V Average On−State Current : IT AV = 5A


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    PDF SF5G41A SF5J41A SF5G41A SF5J41 SF5G41 SF5J41A

    GW19NC60WD

    Abstract: gw19nc60w
    Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction


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    PDF STGW19NC60WD STGP19NC60WD O-220 O-247 O-220 GW19NC60WD gw19nc60w

    CEB10N6

    Abstract: CEF10N6 CEP10N6
    Text: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


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    PDF CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6

    Untitled

    Abstract: No abstract text available
    Text: SF5G42, SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42, SF5J42 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A


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    PDF SF5G42, SF5J42 O-220AB SF5G42 SF5J42

    f5jz47

    Abstract: f5gz47 SF5JZ47 SF5GZ47
    Text: SF5GZ47,SF5JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5GZ47,SF5JZ47 Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400, 600V : VRRM = 400, 600V Average On−State Current : IT AV = 5A


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    PDF SF5GZ47 SF5JZ47 SF5GZ47 f5jz47 f5gz47 SF5JZ47

    f5gz47

    Abstract: F5JZ47 SF5GZ47 SF5JZ47
    Text: SF5GZ47, SF5JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5GZ47, SF5JZ47 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A


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    PDF SF5GZ47, SF5JZ47 SF5GZ47 f5gz47 F5JZ47 SF5GZ47 SF5JZ47

    GW19NC60WD

    Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
    Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction


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    PDF STGW19NC60WD STGP19NC60WD O-220 O-247 O-220 GW19NC60WD gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97

    SF5G41

    Abstract: SF5G41A SF5J41 SF5J41A
    Text: SF5G41A,SF5J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G41A,SF5J41A Unit: mm MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current : IT AV = 5A


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    PDF SF5G41A SF5J41A SF5G41A SF5G41 SF5J41 SF5J41A

    Untitled

    Abstract: No abstract text available
    Text: SF5G48, SF5J48, USF5G48, USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48, SF5J48, USF5G48, USF5J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A


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    PDF SF5G48, SF5J48, USF5G48, USF5J48 SF5G48 SF5J48

    SF5J42

    Abstract: SF5G42
    Text: SF5G42,SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42,SF5J42 Unit: mm MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current : IT AV = 5A


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    PDF SF5G42 SF5J42 O-220AB SF5G42 SF5J42

    Untitled

    Abstract: No abstract text available
    Text: GaN 600V SBD < m Nihon Inter Electronics Corporation Gallium Nitride 600V SBD Vr-V Characteristics H //// -PFC Circuit Applied Reverse Voltage [V] -Reduce VF rise due to current collapse to below 20% Recovery waveform GaN vs Si Si GaN FSU05A60 -FRD/5A/600V


    OCR Scan
    PDF FSU05A60 -FRD/5A/600V) 40ns/div FSA06A60 GaN-SBD/6A/600V) FSA04B60 O-220 FSA06B60