NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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OCR Scan
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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PDF
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s29f
Abstract: No abstract text available
Text: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '
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OCR Scan
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TMS29F040
4194304-BIT
29LF040/
29VF040
ComJS820A
R-PDSO-G32)
s29f
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040
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OCR Scan
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SMJS820B
TMS29F040
29LF040/
29VF040
SMJS825)
A18A17
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PDF
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ba qu
Abstract: TC58F401
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION
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OCR Scan
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TC58F400F
TC58F401F
BITS/262
TC58F400/401
TC58F4
TC58F400)
00000h
01FFFh
02000h
ba qu
TC58F401
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PDF
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A29L008
Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:
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Original
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A29L008
KbyteX15
SA10
SA11
SA12
SA13
SA14
SA15
SA16
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PDF
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a29040al-70
Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
Text: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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Original
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A29040A
a29040al-70
A29040A-55
A29040A-70
A29040AL
A29040AL-55
A29040AV-55
IN3064
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PDF
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am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Original
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
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PDF
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Original
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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PDF
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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Original
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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PDF
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A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
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Original
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A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
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PDF
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VT82C496G
Abstract: VT82C486 VT82C496 VIA VT82C496G VT82C406MV VT82C486A vt82c496g" VT82C406 80486DX4-100 VT82C505
Text: VT82C496G VT82C406MV GREEN PC 80486 PCI/VL/ISA SYSTEM DATA SHEET DATE : April 20, 1995 VIA TECHNOLOGIES, INC. Table of Contents VIA Technologies, Inc. Table of Contents Features. 1
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Original
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VT82C496G
VT82C406MV
C496G
MSTR16#
208-Pin
85TYP
VT82C496G
VT82C486
VT82C496
VIA VT82C496G
VT82C406MV
VT82C486A
vt82c496g"
VT82C406
80486DX4-100
VT82C505
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PDF
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M29W008A
Abstract: M29W008AB M29W008AT
Text: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte
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Original
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M29W008AT
M29W008AB
TSOP40
M29W008A
M29W008AB
M29W008AT
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR CM44-10134-1E CONTROLLER MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90945 Series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and intended reader Thank you very much for your continued patronage of Fujitsu semiconductor products.
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Original
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CM44-10134-1E
2MC-16LX
16-BIT
MB90945
F2MC-16LX
F2MC-16LX
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM44-10103-5E 2 F MC-16LX 16-BIT MICROCONTROLLER MB90550A/B Series HARDWARE MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90550A/B Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.
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Original
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CM44-10103-5E
2MC-16LX
16-BIT
MB90550A/B
MC-16LX
F2MC-16LX
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR CM44-10102-5E CONTROLLER MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90570/A series HARDWARE MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90570/A series HARDWARE MANUAL FUJITSU LIMITED PREFACE • Objectives and Intended Reader Thank you for your interest in Fujitsu semiconductor products.
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Original
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CM44-10102-5E
2MC-16LX
16-BIT
MB90570/A
-16LX
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PDF
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diode T35 12H
Abstract: ST10F269Z2Q6 ST10F269Q ST10F269Z2T3 PQFP144 ST10F269 TQFP144 diode t318 BB126 st10 Bootstrap
Text: ST10F269 16-BIT MCU WITH MAC UNIT, 128K to 256K BYTE FLASH MEMORY AND 12K BYTE RAM DATASHEET • ■ 2K Byte Internal RAM 16 CPU-Core and MAC Unit Watchdog 16 10K Byte XRAM CAN1_RXD CAN1_TXD CAN1 CAN2_RXD CAN2_TXD CAN2 PEC Oscillator and PLL 16 Interrupt Controller
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Original
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ST10F269
16-BIT
256KByte
TQFP144
F269-Q3
diode T35 12H
ST10F269Z2Q6
ST10F269Q
ST10F269Z2T3
PQFP144
ST10F269
TQFP144
diode t318
BB126
st10 Bootstrap
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PDF
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Untitled
Abstract: No abstract text available
Text: AMDB Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for
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OCR Scan
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Am29LV081
20-year
Am29LV081B-100
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PDF
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Untitled
Abstract: No abstract text available
Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from
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OCR Scan
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Am29DL800B
8-Bit/512
16-Bit)
Am29DL800
FBB048.
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PDF
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20510D
Abstract: No abstract text available
Text: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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OCR Scan
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Am29LV004
20510D
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PDF
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AN1995
Abstract: M25P40
Text: M25P40 4 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 4 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (512 Kbit) in 1s (typical) ■ Bulk Erase (4 Mbit) in 4.5s (typical)
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Original
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M25P40
50MHz
2013h)
M25P40and
AN1995
M25P40
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PDF
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Am29DL400BT
Abstract: No abstract text available
Text: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,
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OCR Scan
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Am29DL400B
16-Bit)
44-Pin
16-038-S044-2
Am29DL400BT
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDZ1 Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Optim ized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and w rite operations for
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OCR Scan
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Am29LV081
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PDF
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am29f040b
Abstract: No abstract text available
Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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OCR Scan
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Am29F040B
Am29F040
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PDF
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Untitled
Abstract: No abstract text available
Text: AMD£1 ADVANCE INFORM ATION Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents
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OCR Scan
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Am29F004B
29F004B
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PDF
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