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5962-9213901HXC interpoint

Abstract: MHF 2805s MHF2815 5962-9213901HXC
Contextual Info: in erpoint MHF+ MHF+ S er ie s DC/DC C onverters Up to 15 watts output power G eneral D e s c r ip t io n The MHF+ Series of high frequency DC/DC converters offers a wide input voltage range of 16 to 40 volts and up to 15 watts of output power. The units are capable of withstanding

Calex

Abstract: design the instrumentation amplifier with bridge type transducer d303 d303 PA
Contextual Info: Model 436 Bridgesensor Features Description ! Complete Strain Gage Bridge Signal Conditioner ! 4-20 mA or 12 ±8mA Output ! Contains Isolated DC/DC Converter ! Use with 0.5mV/V to 10mV/V Sensors ! Drives Four 350 ohm Bridges at 10 Volts The Model 436 is a self contained, current output, DC powered

AN569

Abstract: MTB6N60E SMD310
Contextual Info: MOTOROLA Order this document by MTB6N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB6N60E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS on = 1.2 OHM N–Channel Enhancement–Mode Silicon Gate

18004D2

Abstract: MJB18004D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package
Contextual Info: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJB18004D2T4 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS D2PAK For Surface Mount The MJB18004D2T4 is state–of–art High Speed High gain Bipolar

Contextual Info: MMDF4C03HD Power MOSFET 4 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

AN569

Abstract: MMDF4C03HD MMDF4C03HDR2 SMD310
Contextual Info: MMDF4C03HD Preferred Device Advance Information Power MOSFET 4 Amps, 30 Volts Complementary SO–8, Dual http://onsemi.com These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

FT960

Abstract: MMFT960T1 SMD310
Contextual Info: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223

2N02L

Abstract: MMFT2N02EL MMFT2N02ELT1 AN569
Contextual Info: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new

2955E

Abstract: AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3
Contextual Info: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.

Contextual Info: Crane Aerospace & Electronics Power Solutions MHV Single, Dual and Triple DC-DC Converters 28 Volt input – 15 Watt Features No cross regulation on dual outputs • Operating temperature -55°C to +125°C • Input voltage range 16 to 50 volts • Transient protection 80 V for 120 ms

MTD1N80E

Abstract: AN569 SMD310
Contextual Info: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor DPAK for Surface Mount MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM

1P40E

Contextual Info: MTD1P40E Preferred Device Advance Information Power MOSFET 1 Amp, 400 Volts P−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage

Contextual Info: MTB20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

AN569

Abstract: MTD1N80E SMD310
Contextual Info: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate

ED3P03

Abstract: NTMD3P03R2 SMD310
Contextual Info: NTMD3P03R2 Product Preview Power MOSFET -3.05 Amps, -30 Volts Dual P–Channel SO–8 Features • • • • • • • http://onsemi.com High Efficiency Components in a Dual SO–8 Package High Density Power MOSFET with Low RDS on Miniature SO–8 Surface Mount Package – Saves Board Space

NTTD1P02R2

Abstract: SMD310 QT18
Contextual Info: NTTD1P02R2 Product Preview Power MOSFET -1.45 Amps, -20 Volts P–Channel Enhancement Mode Dual Micro8 Package http://onsemi.com Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual Micro8 Surface Mount Package

1P40E

Abstract: MTD1P40E AN569 MTD1P40E1 MTD1P40ET4
Contextual Info: MTD1P40E Preferred Device Advance Information Power MOSFET 1 Amp, 400 Volts P–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage

AN569

Abstract: MTB20N20E MTB20N20ET4
Contextual Info: MTB20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

6P02

Abstract: NTF6P02T3 SMD310
Contextual Info: NTF6P02T3 Power MOSFET -6.0 Amps, -20 Volts P–Channel SOT–223 Features • • • • http://onsemi.com Low RDS on Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified –6.0 AMPERES –20 VOLTS RDS(on) = 44 mW (Typ.)

Power logic MOSFET SOT-223

Abstract: 2N02l 1000 watts ups circuit diagram dc marking code dpak sot-223 code marking 2N3904 AN569 MMFT2N02EL MMFT2N02ELT1 SMD310
Contextual Info: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new

mosfet transistor 800 volts.200 amperes

Contextual Info: MTSF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P−Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed

MTSF2P03HD

Abstract: AN569 MTSF2P03HDR2 SMD310
Contextual Info: MTSF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P–Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed

Contextual Info: MMDF2C03HD Preferred Device Power MOSFET 2 Amps, 30 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

ASA28XXD

Abstract: 600 volts step up to 800 volts 500 watt power circuit diagram flyback
Contextual Info: PD - 94540 ASA28XXD SERIES 28V Input, Dual Output ADVANCED ANALOG HIGH RELIABILITY HYBRID DC/DC CONVERTERS Description The ASA28XXD Series of DC/DC converters are high reliability thick film hybrid converters that use flyback topology operating at a nominal frequency of 550Khz.