IRFBc40
Abstract: transistor irfbc40 4A,600V IRFBC42 TB334 TA17426
Text: IRFBC40, IRFBC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
Original
|
IRFBC40,
IRFBC42
IRFBc40
transistor irfbc40
4A,600V
IRFBC42
TB334
TA17426
|
PDF
|
MOSFET TEST SIMPLE Procedures
Abstract: Simple test MOSFET Procedures 4A,600V IRFAC40 IRFAC42 TB334
Text: IRFAC40, IRFAC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6.2A and 5.4A, 600V Description • rDS ON = 1.2Ω and 1.6Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
Original
|
IRFAC40,
IRFAC42
MOSFET TEST SIMPLE Procedures
Simple test MOSFET Procedures
4A,600V
IRFAC40
IRFAC42
TB334
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFAC40, IRFAC42 S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6.2A and 5.4A, 600V Description • rDS ON = 1.2Ω and 1.6Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
Original
|
IRFAC40,
IRFAC42
TA17426.
IRFAC40
|
PDF
|
irfbc40
Abstract: No abstract text available
Text: IRFBC40, IRFBC42 S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
Original
|
IRFBC40,
IRFBC42
TA17426.
600VSS
IRFBC42
irfbc40
|
PDF
|
Simple test MOSFET Procedures
Abstract: IRFBC40 TB334
Text: IRFBC40 Data Sheet July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
|
Original
|
IRFBC40
Simple test MOSFET Procedures
IRFBC40
TB334
|
PDF
|
IRFBC40 Transistor
Abstract: transistor irfbc40 irfbc40
Text: IRFBC40 Data Sheet Title FB 0 bt 2A, 0V, 00 m, July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
Original
|
IRFBC40
IRFBC40 Transistor
transistor irfbc40
irfbc40
|
PDF
|
600V 2A MOSFET N-channel
Abstract: transistor irfbc40 IRFBC40 irfbc40 free download TB334
Text: IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
|
Original
|
IRFBC40
600V 2A MOSFET N-channel
transistor irfbc40
IRFBC40
irfbc40 free download
TB334
|
PDF
|
irf 940
Abstract: IRFAC40 TO-204AA
Text: PD - 90587 IRFAC40 600V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAC40 BVDSS RDS(on) ID 600V 1.2Ω 6.2Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
IRFAC40
O-204AA/AE)
paramet252-7105
irf 940
IRFAC40
TO-204AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 90587 IRFAC40 600V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAC40 BVDSS RDS(on) ID 600V 1.2Ω 6.2Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
|
Original
|
IRFAC40
O-204AA/AE)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94986 SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
|
Original
|
IRFBC40APbF
O-220AB
D20AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94986 SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
|
Original
|
IRFBC40APbF
O-220AB
|
PDF
|
F53 DIODE
Abstract: marking F53 AN-994 IRFBC40 IRFBC40L IRFBC40S
Text: PD - 9.1016 IRFBC40S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC40S Low-profile through-hole (IRFBC40L) Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D
|
Original
|
IRFBC40S/L
IRFBC40S)
IRFBC40L)
F53 DIODE
marking F53
AN-994
IRFBC40
IRFBC40L
IRFBC40S
|
PDF
|
IRFBC40A
Abstract: No abstract text available
Text: PD -91885A IRFBC40A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
|
Original
|
-91885A
IRFBC40A
O-220AB
Factor10)
IRFBC40A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94986 SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
|
Original
|
IRFBC40APbF
O-220AB
08-Mar-07
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: IRFBC40, IRFBC42 HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
OCR Scan
|
IRFBC40,
IRFBC42
RFBC40,
|
PDF
|
irfbc40
Abstract: No abstract text available
Text: IRFBC40, IRFBC42 fÇ j HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
OCR Scan
|
IRFBC40,
IRFBC42
TA17426.
irfbc40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFAC40, IRFAC42 HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6.2A and 5.4A, 600V Description • These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
OCR Scan
|
IRFAC40,
IRFAC42
TA17426.
IRFAC40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFBC40 Semiconductor Data Sheet July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
OCR Scan
|
IRFBC40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-91885A International IOR Rectifier SMPS MOSFET IRFBC40A HEXFET Power MOSFET A pplications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching V dss 600V Rds(on) max Id 1.2£2 6.2A B e n efits • Low Gate Charge Qg results in Simple
|
OCR Scan
|
PD-91885A
IRFBC40A
|
PDF
|
IRFAC40R
Abstract: MOSFET IRF VDs 600v RG-910 IRFAC42R irfac-types FAC42
Text: Rugged Power MOSFETs IRFAC40R, IRFAC42R File Num ber 2 1 5 6 Avalanche-Energy-Rated N-Channel Power MOSFETs 6.2A and 5.4A, 600V fDsion = 1.20 and 1.60 N-CHANNEL ENHANCEMENT MODE Features: • Repetitive Avalanche Ratings m Sim ple Drive R equirem ents ■ Ease o f Paralleling
|
OCR Scan
|
IRFAC40R,
IRFAC42R
92CS-42658
IRFAC40R
IRFAC42R
MOSFET IRF VDs 600v
RG-910
irfac-types
FAC42
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • 4302571 ODS4DÖ4 47t. HAS IRFBC40R Jg H A R R IS IRFBC42R N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 Package Features T0-220A B TOP VIEW • 6.2A and 5.4A, 600V • rDS on = 1-2fi • Repetitive Avalanche Ratings DRAIN (FLANGE) • Simple Drive Requirements
|
OCR Scan
|
IRFBC40R
IRFBC42R
T0-220A
IRFBC40R
IRFBC42R
IRFBC40R,
RFBC40R,
/RFBC42R
|
PDF
|
IRFBC40R
Abstract: No abstract text available
Text: 2 H a r IRFBC40R IRFBC42R r i s N-Channel Power MOSFETs Avalanche Energy Rated August 1 9 9 1 Features Package TO -2 2 0 A B TOP VIEW • 6.2A and 5.4A, 600V • rDS(on = 1-2 fl * ntl 1-6 fl • Repetitive Avalanche Ratings DRAIN (FLANGE) • Simple Drive Requirements
|
OCR Scan
|
IRFBC40R
IRFBC42R
IRFBC42R
IRFBC40R,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFAC40, IRFAC42 HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6 .2 A and 5.4A , 60 0V Description • r D S O N = 1 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
OCR Scan
|
IRFAC40,
IRFAC42
RFAC40,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MASS45E International tor Rectifier 001 • IN R PD-9.506B IRFBC40 INTERNATIONAL R E C T I F I E R H EXFEr Power M O S FE T • • • • • O O lM ' îb e Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
|
OCR Scan
|
MASS45E
IRFBC40
|
PDF
|
