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    6 VOLT NPN Search Results

    6 VOLT NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    6 VOLT NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature


    Original     		PDF TIPL762, TIPL762A OT-93 TIPL762 TCP762AG

    Untitled

    Abstract: No abstract text available
    Text: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature


    Original     		PDF TIPL762, TIPL762A global/pdfs/TSP1203 OT-93 TCP762AG

    by205 diode

    Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL762 TIPL762A
    Text: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature


    Original     		PDF TIPL762, TIPL762A OT-93 TIPL762 by205 diode 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL762 TIPL762A

    BY205-400

    Abstract: TRANSISTOR D 1978 by205 by205 diode TRANSISTOR 2n2904 2N2222 2N2904 D44H11 D45H11 TIPL762
    Text: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature


    Original     		PDF TIPL762, TIPL762A OT-93 TIPL762 OT-93 BY205-400 TRANSISTOR D 1978 by205 by205 diode TRANSISTOR 2n2904 2N2222 2N2904 D44H11 D45H11 TIPL762

    MP4T3243

    Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
    Text: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers


    Original     		PDF MP4T3243 OT-23 MP4T324335 Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303

    sot23 1303

    Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
    Text: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers


    Original     		PDF MA4T3243 OT-23 MA4T324335 sot23 1303 IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335

    40 watts power amplifier rl 8 ohms

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large-signal, common base, Class-C CW amplifier applications in the range 1600 - 1 6 4 0 MHz. • Specified 28 Volt, 1.6 GHz Class-C Characteristics


    OCR Scan     		PDF 395C-01, MRF16030 40 watts power amplifier rl 8 ohms

    MRF842

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF842 The RF Line NPN Silicon RF Power Transistor . designed for 12.5 volt UHF large-signal, common-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 80 6 -9 6 0 MHz.


    OCR Scan     		PDF MRF842 MRF842

    TRANSISTOR S 838

    Abstract: transistor c 838 TRANSISTOR motorola 838
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF847 . . . designed for 12.5 volt UHF large-signal, com m on-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 80 6 -9 6 0 MHz.


    OCR Scan     		PDF MRF847 MRF847 TRANSISTOR S 838 transistor c 838 TRANSISTOR motorola 838

    MRF844

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF844 The RF Line NPN Silicon RF Power TVansistor . . . designed for 12.5 volt UHF large-signal, common-base am plifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 6 -9 6 0 MHz.


    OCR Scan     		PDF MRF844 MRF844

    C12P

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 volt UHF large-signal, com m on-base am plifier applica­ tions in industrial and com m ercial FM equipm ent operating in the range o1 8 0 6 -9 6 0 MHz.


    OCR Scan     		PDF MRF842 C12P

    MRF844

    Abstract: equivalent transistor rf "30 mhz" 8w RF POWER TRANSISTOR NPN Transistor D 2599
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silicon RF Power Transistor . . . designed for 12.5 volt UHF large-signal, com m on-base am plifier applica­ tions in industrial and com m ercial FM equipm ent operating in the range of 8 0 6 -9 6 0 MHz,


    OCR Scan     		PDF MRF844 equivalent transistor rf "30 mhz" 8w RF POWER TRANSISTOR NPN Transistor D 2599

    TIPL762

    Abstract: TIPL762A T1PL762
    Text: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS _ AUGUST 1978 • REVISED MAY 1995 • Rugged TViple-Diffused Planar Construction • 6 A Continuous Collector Current • Operating Characteristics Fully Guaranteed at100°C • 1000 Volt Blocking Capability


    OCR Scan     		PDF TIPL762, TIPL762A at100Â OT-93 TIPL762 T1PL762

    PG2020

    Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
    Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6


    OCR Scan     		PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 PG2020 PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053

    Untitled

    Abstract: No abstract text available
    Text: TD62303F T D62303F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 6 DIGIT DRIVER Unit in mm Features . Output Current . 500mA Max. 17V . Output Volt a g e . . TTL, C-MOS Comp a t i b l e Inputs . Suitable for D i g i t -Driver of 6 Digit Common


    OCR Scan     		PDF TD62303F D62303F 500mA TD623

    MRF857S

    Abstract: transistor bd136 MRF857S equivalent 305D-01
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.


    OCR Scan     		PDF 305D-01, MRF857S transistor bd136 MRF857S equivalent 305D-01

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858 MRF858S NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 80 0 -9 6 0 MHz.


    OCR Scan     		PDF MRF858 MRF858S

    c 2579 power transistor

    Abstract: hf power transistor NPN c 2579 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.


    OCR Scan     		PDF MRF899 c 2579 power transistor hf power transistor NPN c 2579 transistor

    NEL130681-12

    Abstract: J425 NEL1306 NEL1300 2SC3542
    Text: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL13208I-12 FEATURES DESCRIPTION • HIGH LINEAR POWER AND GAIN: NEL1306: PidB = 38 dBm, GidB - 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB - 6 dB TYP NEC's NEL1300 series of NPN epitaxial microwave power


    OCR Scan     		PDF NEL1306: NEL1320: NEL130681-12 NEL13208I-12 NEL1300 10pFM 1000pF NEL132081-12 J425 NEL1306 2SC3542

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF840 The RF Line N PN Silicon RF Power TVansistor . designed for 12.5 volt UHF large-signal, common-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 6 -9 6 0 MHz.


    OCR Scan     		PDF MRF840 MRF840

    ATIC 59 C1

    Abstract: 301Ah transistor bd136 mrf857s 03Af
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.


    OCR Scan     		PDF F857S MRF857S ATIC 59 C1 301Ah transistor bd136 03Af

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz


    OCR Scan     		PDF MA4T3243 MA4T324335

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR F X T 6 1 4 ISSUE 1 - FEB 94 FEATURES * 100 Volt VCE0 * * /C \ ¿ 7 ffh—' //iff Í//H 800 mA continuous current Gain of 10K at lc=500mA * Pt0,= 1W att APPLICATIONS * Lamp, solenoid and relay drivers E


    OCR Scan     		PDF 500mA BCX38 cH7Q57Ã 001G35S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silicon RF Power Transistors MRF891 MRF891S . . , designed for 24 volt U H F large-signal, common-emitter amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 0 -9 6 0 MHz.


    OCR Scan     		PDF MRF891 MRF891S