200B
Abstract: 27LV256 DK-2750 o2 9910 DS11020G
Text: 27LV256 256K 32K x 8 Low-Voltage CMOS EPROM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 1 31 32 2 5 29 6 28 7 27 8 9 10 11 26 25 24 23 A8 A9 A11 NC OE A10 CE O7 O6 20 19 18 17 21 16 22 13 15 12 14 A6 A5 A4
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27LV256
27LV256
D-81739
200B
DK-2750
o2 9910
DS11020G
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27LV256
Abstract: DK-2750 RG41 200B
Text: 27LV256 256K 32K x 8 Low-Voltage CMOS EPROM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 1 31 32 2 5 29 6 28 7 27 8 9 10 11 26 25 24 23 A8 A9 A11 NC OE A10 CE O7 O6 20 19 18 17 21 16 22 13 15 12 14 A6 A5 A4
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27LV256
27LV256
DK-2750
RG41
200B
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ICE3A1065L
Abstract: ICE3A1565L ICE3B0365L surge lightning to smps ICE3A1065l equivalent transistor Triggered spark gap diode C10 325KT ICE3B0365 INFINEON PART MARKING
Text: Version 2.0, 8 May 2006 CoolSET -F3 ICE3 B03 6 5 L ICE3 A10 6 5 L ICE3 A15 6 5 L Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS™ and Latched off Mode Power Management & Supply N e v e r s t o p t h i n k i n g .
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ICE3xxx65L
ICE3A1065L/ICE3A1565L
ICE3B0365L
ICE3B0365L,
ICE3A1065L
ICE3A1565L
ICE3B0365L
surge lightning to smps
ICE3A1065l equivalent transistor
Triggered spark gap
diode C10
325KT
ICE3B0365
INFINEON PART MARKING
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IEEE1284-I
Abstract: IEEE1284-II SN74LVC161284
Text: SN74LVC161284 19-BIT BUS INTERFACE WITH 3-STATE OUTPUTS SCAS583C - NOVEMBER 1 9 9 6 - REVISED FEBRUARY 1997 DGG OR DL PACKAGE TOP VIEW 1.4-kQ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors [ A9 [ A10 [ A11 [
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SN74LVC161284
19-BIT
SCAS583C
MIL-STD-883,
IEEE1284-I
IEEE1284-II
300-mil
IEEE1284-I
IEEE1284-II
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Untitled
Abstract: No abstract text available
Text: IDT71256SA70PE-TL IL08 C-MOS 256 K 32,768 x 8 -BIT STATIC RAM —TOP VIEW— 10 A14 IN 1 VDD (+5 V) 28 A0 9 A1 8 A12 IN 2 27 WE IN A2 7 6 A7 IN 3 26 A13 IN 5 4 A6 IN 4 25 A8 IN 3 25 A5 IN 5 24 A9 IN 24 21 A4 IN 6 23 A11 IN 23 7 22 OE IN 8 21 A10 IN A1 IN
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IDT71256SA70PE-TL
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Untitled
Abstract: No abstract text available
Text: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 (Military Pinout)
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AS8S512K32
AS8S512K32A
MIL-STD-883
512Kx32
AS8S512K32Q1-12/Q
AS8S512K32Q1-15/Q
AS8S512K32Q1-17/Q
AS8S512K32Q1-20/Q
AS8S512K32Q1-25/Q
AS8S512K32Q1-35/Q
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A1712
Abstract: AN651 Si4684-A10 SI4684
Text: Si 4 6 8 4 - A10 S INGLE - CHIP , F M / D A B /D AB + R ADIO R ECEIVER Features Worldwide FM band support 76–108 MHz Advanced RDS/RBDS decoder DAB, DAB+ Band III support (168–240 MHz) Supports WorldDMB Receiver Profiles 1 and 2 OFDM channel demodulator
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5962-9461109haa
Abstract: 5962-9461108HAA 5962-9461110HMA 5962-9562408HNC 5962-9461109HMA
Text: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 & 5962-95624 (Military Pinout)
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AS8S512K32
AS8S512K32A
MIL-STD-883
512Kx32
AS8S512K32A
5962-9461109haa
5962-9461108HAA
5962-9461110HMA
5962-9562408HNC
5962-9461109HMA
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AS8S512K3
Abstract: 5962-9461109HMX
Text: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 (Military Pinout)
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AS8S512K32
AS8S512K32A
MIL-STD-883
512Kx32
461108HAX
5962-9461107HAX
5962-9461106HAX
5962-9461105HAX
5962-9461118HAX
5962-9461117HAX
AS8S512K3
5962-9461109HMX
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SN74ALVCH16500
Abstract: No abstract text available
Text: SN74ALVCH16500 18-BIT UNIVERSAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS SCES023 - JULY 1995 DGG OR DL PACKAGE crop v ie w OEAB LEAB A1 GND A2 [ [ [ [ [ 1 2 3 4 5 U A3 [ 6 VCc [ 7 8 9 10 11 12 13 A9 [ 14 A10 [ 15 A11 [ 16 A12 [ 17 GND [ 18 A4 A5 A6 GND A7 A8
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SN74ALVCH16500
18-BIT
SCES023
300-mll
latch-enabl55
SN74ALVCH16500
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Untitled
Abstract: No abstract text available
Text: 27C512A 512K 64K x 8 CMOS EPROM PACKAGE TYPES FEATURES • High speed performance PLCC co in ^ co i - 3—, oo i— i— < i<- < z > << • CMOS Technology for low power consumption /LtÌL?M"ÌtéÌL2ÌÌ.2Ì A8 A9 II < fe A11 CM L2 -6 - NC ID \-= A10 O
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27C512A
28-pin
32-pin
S-013
DS00049M-page
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5962
Abstract: 5962-9461110HTC 702 smd AS8S512K32 AS8S512K32A 5962-9461108HTA SRAM flatpack BQFP 100 PACKAGE AS8S512K3 9461110HM
Text: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 & 5962-95624 (Military Pinout)
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AS8S512K32
AS8S512K32A
MIL-STD-883
512Kx32
A17hout
5962
5962-9461110HTC
702 smd
AS8S512K32
AS8S512K32A
5962-9461108HTA
SRAM flatpack
BQFP 100 PACKAGE
AS8S512K3
9461110HM
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Untitled
Abstract: No abstract text available
Text: LC3564SM-70-TLM IL08D C-MOS 64 K 8192 x 8 -BIT SRAM —TOP VIEW— 10 VDD 28 1 NC 9 8 A12 2 27 WE 7 6 A7 3 26 CE2 5 4 A6 4 25 A8 3 25 A5 5 24 A9 24 21 A4 6 23 A11 23 2 A3 7 22 OE A2 8 21 A10 A1 9 20 CE1 A0 A1 A2 I/O 1 A3 I/O 2 A4 I/O 3 A5 I/O 4 A6 I/O 5 A7
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LC3564SM-70-TLM
IL08D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON I TECHNOLOGY, 1 6 M l n b XAM INC. FEATURES 50-Pin TSOP V cc DQ0 DQ1 V ssQ DQ2 DQ3 V ccQ DQ4 DQ5 V ssQ DQ6 DQ7 V ccQ DQ M L W E# C AS# RAS# C S# BA A10 A0 A1 A2 A3 V cc MARKING 1M16 • Plastic Package - OCPL 50-pin TSOP 400 mil TG • Timing
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50-Pin
MT48LC1M16A1TG-8A
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si4688
Abstract: si4688 a 10 si4688-a10 dab radio circuit AM/FM radio schematic diagrams
Text: Si 4 6 8 8 - A10 S I N G L E - CHIP , F M / H D / D A B / D A B + R A D I O R EC EIVER Features Worldwide FM band support 76–108 MHz Advanced RDS/RBDS decoder FM HD Radio support Patent-pending fast-HD station
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TAA 521
Abstract: AS8SLC512K32
Text: SRAM AS8SLC512K32 Austin Semiconductor, Inc. 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM Memory Array MCM NC A0 A1 A2 A3 A4 A5 CE\3 GND CE\4 WE\1 A6 A7 A8 A9 A10 Vcc 68 Lead CQFP (Q) FEATURES OPTIONS • • • • I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6
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AS8SLC512K32
CeraLC512K32
AS8SLC512K32P-12/IT
-55oC
125oC
TAA 521
AS8SLC512K32
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Untitled
Abstract: No abstract text available
Text: IMICRON TCCHWLOOY.INC. S MT48LC1M16A1 S - 512K SYNCHRONOUS DRAM V dd DQ0 DQ1 VssQ DQ2 DQ3 V ddQ DQ4 DQ5 VssQ DQ6 DQ7 V ddQ DQML W E# CAS# RAS# CS# BA A10 A0 A1 A2 A3 V dd M ARKING N ote: 1 M eg x 16 1• 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
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048-cycle
096-cycle
50-PIN
16MSDRAMx16
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Untitled
Abstract: No abstract text available
Text: IS61LV256 PIN CONFIGURATION 28-Pin SOJ p in CONFIGURATION 28-Pin TSOP Type I A14 C 1 28 ] A12 C 2 27 ] WE A7 C 3 26 ] A13 A6 C 4 25 ] A8 A5 H 5 24 ] A9 A4 C 6 23 ] A11 OE A11 A9 A8 A13 WE A3 E 7 22 ] ÔË vcc A2 C 8 21 ] A10 A1 C 9 20 ] CE A14 A12 A7 A6
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IS61LV256
28-Pin
A0-A14
I/00-I/07
SR063-1H
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ACME
Abstract: T25x15x8C 15AWG
Text: 1. M e c h a n ic a l: 2. S c h e m a t i c : 3.0Q Typ 9T 15AWG 1 o- 2 O- 4 -0 3 9T 15AWG Core: A cm e A10 T 2 5 x1 5 x8 C 3. Electrical X F B D 0 6 -C M C 1 2 Ü YYWW OCL: 6 0 0 u H i3 0 % @ 10KHz, Leakage In d u c ta n c e : E — 2 0 .3 2 — A 3 0 .5D Max
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XF6D06-CMC120
15AWG
T25x15x8C
600uHi30%
10KHz,
125DVrms
MIL-STD-202G,
ACME
T25x15x8C
15AWG
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27C512-15
Abstract: 27C512A 27C512-12
Text: Obsolete Device 27C512A 512K 64K x 8 CMOS EPROM DESCRIPTION 30 31 1 32 2 29 6 28 7 27 27C512A 5 8 9 10 11 12 26 25 24 23 22 13 A8 A9 A11 NC OE/VPP A10 CE O7 O6 20 19 18 17 16 21 15 A6 A5 A4 A3 A2 A1 A0 NC O0 3 4 A7 A12 A15 NU Vcc A14 A13 PLCC 14 DIP/SOIC
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27C512A
sp35-882
D-85737
NL-5152
27C512-15
27C512A
27C512-12
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Microchip 27C512
Abstract: No abstract text available
Text: 27C512A 512K 64K x 8 CMOS EPROM DESCRIPTION 30 31 1 32 2 29 6 28 7 27 27C512A 5 8 9 10 11 12 26 25 24 23 22 13 A8 A9 A11 NC OE/VPP A10 CE O7 O6 20 19 18 17 16 21 15 A6 A5 A4 A3 A2 A1 A0 NC O0 3 4 A7 A12 A15 NU Vcc A14 A13 PLCC 14 DIP/SOIC A15 A12 A7 A6 A5
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27C512A
Microchip 27C512
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ek681024
Abstract: No abstract text available
Text: < 2 8 * ' EK681024A £ U R £ ;<a 1• 32 □ VCC A16 □ NC □ 2 31 □ A15 A14 □ 3 30 □ CE2 A12 □ 4 29 □ /WE A7 □ 5 28 □ A13 A6 El 6 27 □ A8 A5 7 26 □ A9 A4 □ 8 25 □ A11 A3 □ 9 24 □ /OE A2 □ 10 23 □ A10 A1 □ 11 22 □ /CE1
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180mA,
150mA,
130mA
8x20mm)
EK681024A
EK681024A
81024A
ek681024
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PDF
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A6 ROC
Abstract: No abstract text available
Text: EK621024A 128K X 8 Bit CMOS SRAM 30 3 /OE 1 A10 3 /CE1 A13 C 4 29 : DQ8 /W E C 5 28 : DQ7 CE2 C 6 A15 C 7 27 : DQ6 26 : DQ5 25 : DQ4 24 3 VSS D DQ3 A11 C 1 32 A9 C 2 AS C 3 31 VCC C 8 NC □ 9 FEATURES • Access Times 35ns, 55ns, 70ns, 100ns • Single 5V ±10% Power Supply
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EK621024A
100ns
8x20mm)
EK621024A
21024A
A6 ROC
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PDF
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A14C
Abstract: No abstract text available
Text: Bowmar Ulfhite P W lf llit r / — m ie 3 2 Kx8 B ,T PROGRAMMABLE EEPROM Technology 8023 PIN DIAGRAM A14C 1 A12C 2 28 3 Vcc 27 □ WE A7C 3 A6 C 4 26 □ A13 25 □ A8 24 □ A9 23 □ A11 A5C 5 A4 £ 6 A3C 7 A2C 8 A 1C 9 22 DO E 21 □ A10 20 D C E ADC 10
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DI/05
I/02C
250nS
A14C
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PDF
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