Untitled
Abstract: No abstract text available
Text: Ordering number : EN3240C 1SS351 Schottky Barrier Diode http://onsemi.com Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP Features • • • Series connection of 2 elements in a small-sized package facilitates high-density mounting and
|
Original
|
PDF
|
EN3240C
1SS351
1SS351-applied
|
MCD1320F
Abstract: MD1320F VB26
Text: 3.3V/5V Output MD1320F DESCRIPTION The MD1320F is a high-efficiency step down DC-DC converter power integrated circuit with main MOSFET switch and Schottky Barrier Diode. The MD1320F can deliver15watts maximum 5V, 3.0A with high efficiency over a wide input voltage range.
|
Original
|
PDF
|
MD1320F
MD1320F
deliver15watts
MCD1320F
VB26
|
step up dc-dc 12v to 48v 24 amp
Abstract: MD1620F STOP10 1221N
Text: 5V Output MD1620F DESCRIPTION The MD1620F is a high-efficiency step down DC-DC converter power integrated circuit with main MOSFET switch and Schottky Barrier Diode. MD1620F can deliver 10watts maximum 5V, 2.0V with high efficiency over a wide input voltage range. With the MD1620F
|
Original
|
PDF
|
MD1620F
MD1620F
10watts
1620F
12VDC
57VDC
step up dc-dc 12v to 48v 24 amp
STOP10
1221N
|
S3 Package
Abstract: No abstract text available
Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= Max. 0.4V @ IF=10mA • Low reverse current : IR= Max. 0.5 ㎂ (@ VR=5V) • High speed switching application Ordering Information Type No. Marking SDB110Q S3 Package Code
|
Original
|
PDF
|
SDB110Q
SDB110Q
OD-523
KSD-E009-003
S3 Package
|
YG803C06
Abstract: application FULL WAVE RECTIFIER diode full wave rectifier 6 v
Text: YG803C06 15A Schottky barrier diode (60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection
|
Original
|
PDF
|
YG803C06
O-220F
YG803C06
application FULL WAVE RECTIFIER
diode full wave rectifier 6 v
|
Untitled
Abstract: No abstract text available
Text: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Tj=125°C, typ Applications Features Low VF Optimized for 3.3V 5V output application
|
Original
|
PDF
|
YG803C06R
YG803C06
O-220F
500ns,
|
YG803C06
Abstract: No abstract text available
Text: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection
|
Original
|
PDF
|
YG803C06R
O-220F
YG803C06
|
Untitled
Abstract: No abstract text available
Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= max 0.3V @ IF=1mA • Low reverse current : IR= max 0.5 ㎂ (@ VR=5V) Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 0.8±0.1
|
Original
|
PDF
|
SDB110Q
OD-523
KSD-E009-002
|
MD1320N
Abstract: No abstract text available
Text: 3.3V/5V Output MD1320N 14.1MAX 13.6 DESCRIPTION Dimensions = mm + – 0.1 32 The MD1320N is a high-efficiency step down DC-DC converter 17 Company Name power integrated circuit with main MOSFET switch and Schottky + 7.5 – SHINDENGEN MD1320N 5038N Barrier Diode. The MD1320N can deliver 7.5 watts maximum
|
Original
|
PDF
|
MD1320N
MD1320N
5038N
32-pin
|
SPF-2086
Abstract: 175C 2-18 GHz Low Noise Gallium Arsenide FET SPF2086
Text: Product Description SPF-2086 Stanford Microdevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise PHEMT GaAs FET 1dB output power is +21dBm at 5V and 50mA. This device
|
Original
|
PDF
|
SPF-2086
SPF-2086
21dBm
100mW
175C
2-18 GHz Low Noise Gallium Arsenide FET
SPF2086
|
MAX247
Abstract: STPS80L15CY
Text: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A2 K MAX 247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V
|
Original
|
PDF
|
STPS80L15CY
MAX247
STPS80L15CY
MAX247
|
MAX247
Abstract: STPS80L15CY 5g30
Text: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A1 K MAX 247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V
|
Original
|
PDF
|
STPS80L15CY
MAX247
STPS80L15CY
MAX247
5g30
|
STPS80L15CY
Abstract: No abstract text available
Text: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A2 K Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V
|
Original
|
PDF
|
STPS80L15CY
Max247
STPS80L15CY
|
Untitled
Abstract: No abstract text available
Text: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM 15 V Tj (max) 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A2 K Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V
|
Original
|
PDF
|
STPS80L15CY
Max247
Max247
STPS80L15CY
|
|
|
STPS80L15CY
Abstract: No abstract text available
Text: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM 15 V Tj (max) 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS n n n n n Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V
|
Original
|
PDF
|
STPS80L15CY
Max247
STPS80L15CY
|
spf 2086
Abstract: SPF-2086
Text: Product Description SPF-2086 Stanford M icrodevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise PHEMT GaAs FET 1dB output power is +21 dBm at 5V and 50mA. This device
|
OCR Scan
|
PDF
|
SPF-2086
100mW
SPF-2086
sSs22s|
spf 2086
|
shindengen m
Abstract: No abstract text available
Text: Shindengen 3.3V /5V Output MD1320N 14.1 M AX Dimensions = mm Americajnc. DESCRIPTION 13.6 : The M D1320N is a high-efficiency step down DC-DC converter 17 32 Company Name power integrated circuit with main M O SFET switch and Schottky Type No. Barrier Diode. The M D1320N can deliver 7.5 watts maximum
|
OCR Scan
|
PDF
|
MD1320N
D1320N
MD1320N
5038N
32-pin
shindengen m
|
SPF-2076
Abstract: No abstract text available
Text: SPF-2076 Product Description Stanford M icrodevices’ SPF-2076 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 1-23 GHz, Low Noise PHEMT G a As FET 1dB output power is +21 dBm at 5V and 50mA. This device
|
OCR Scan
|
PDF
|
SPF-2076
100mW
SPF-2076
|
2SC100
Abstract: No abstract text available
Text: Surface Mounting Device y B y Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D1FS4A Case : 1F U n ii : m m Weight : .06g ° — i37 - - K T ~ ? 40V 1.5A •^JvffiSMD • T j I 5013 • 1 £ V f = 0 .4 5V 7 r r s m / ß V '> i ß 11 +5 • S R B if i
|
OCR Scan
|
PDF
|
|
a17 smd diode
Abstract: marking smd NU JT MARKING smd marking MY SM3 DIODE
Text: Schottky Barrier Diode Single Diode m tm m o u tlin e Package :G1F DG1M3A Unu:mm W eight O .O llii Typ in 30V 1.5A Feature • g /J 'fflS M D • Ultra-small SMD • |g n i^ = 0 .8 m m • Ultla-thin PKG=0.8mm • < 5V f = 0 .4 6 V • Low V f-0 .46V • 1KIr = 0.05mA
|
OCR Scan
|
PDF
|
tVU-71-Â
J53Z-1)
a17 smd diode
marking smd NU
JT MARKING
smd marking MY
SM3 DIODE
|
smd diode marking 2J
Abstract: IR LFN smd a4t K711 DIODE vn SMD DG1S6 LFN ir marking ANs diode smd marking S0
Text: Schottky Barrier Diode Single Diode W W DG1S6 W O U T L IN E Package : G 1 F Uim:mm Weight O.Ollg Typ 60 V 1A 3.5 @ Feature • Ultra-small SMD • fè iìl5 k = 0 .8 m m • <5V f=0.58V - I | K 7 1 QD— 1 M — °2 > • Ultra-thin PKG=0.8mm • Low Vf-0 .58V
|
OCR Scan
|
PDF
|
160mm"
J53Z-1)
smd diode marking 2J
IR LFN
smd a4t
K711
DIODE vn SMD
DG1S6
LFN ir
marking ANs
diode smd marking S0
|
SR3045
Abstract: No abstract text available
Text: SURGE SCHOTTKY BARRIER RECTIFIERS OPERATING TEMPERATURE RANGE 2 0 V to 4 5V : - 6 5 ° C t o + 1 2 5 °C 5 0 V to 6 0V : - 6 5 ° C to + 1 5 0 °C STORAGE TEMPERATURE - 6 5 ° C t o ^ 1 5 0 ° C Maximum Peak SURGE PART NUMBER Reverse V oltage M axim um A verage
|
OCR Scan
|
PDF
|
SR3030
SR3040
SR3045
300HOTTKY/TO-3P
SR6Q60
|
sr540 diode
Abstract: No abstract text available
Text: SCHOTTKY BARRIER RECTIFIERS PLASTIC M ATERIAL USED CAR R IES UL 94V-0 O PERATING TEM PE R A TU R E RANGE 20V to 4 5V : -65 °C to +125 "C 50V to 6 0V : -65 °C to +150 °C & AiàLfo'feïÆ.'iÆ TYPE M a xim u m Peak R everse V o lta g e PRV VpK jt&'Krêmfcffr'&aii
|
OCR Scan
|
PDF
|
DO-201
DO-41
Q007L
sr540 diode
|
Untitled
Abstract: No abstract text available
Text: £t7 STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PR ELIM IN ARY DATASHEET MAIN PRODUCT CHARACTERISTICS If av 2 x40 A V rrm 15 V Tj (max) 125 °C V f (max) 0.33 V FEATURES AND BENEFITS • Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A ■ 15V BLOCKING VOLTAGE SUITABLE FO R 5V
|
OCR Scan
|
PDF
|
STPS80L15CY
Max247
STPS80L15CY
|
