5C T TRANSISTOR Search Results

2SC3040

Contextual Info: Ordering number: EN 997B _ 2SC3040 NPN Triple Diffused Planar Silicon Transistor 400V/8A Switching Regulator Applications Features . High breakdown voltage VCB0£500V . Fast switching speed. . Wide ASO. Absolute M a x i m a Ratings at T a = 2 5C

VK200 inductance

Abstract: vk200 vk200 rfc with 6 turns SD1136 inductor vk200 VK200 4B inductor Voltronics Corp. ATC100B uhf transistor amplifier MATERIAL-3M-K-6098
Contextual Info: S G □ 5C d | S —THOMSON 7^237 0GQD17Q T .0 T~ 1? -// SOLID STATE MICROWAVE SD1136 THOMSON-CSF COMPONENTS CORPORATION Montgomeryvilie; PA 18936 * (215 362-8500 • TW X 510-661-7299 10 W, 12.5 V UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1136 is a 12.5 volt epitaxial silicon NPN planar

transistor Bf 979

Abstract: pnp vhf transistor
Contextual Info: I BSE D • flB35taDS 0GG45Ö4 T ■ SIEG 'T -3 I-/S BF 979 S PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 5C 04584 D - BF 9 7 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 4 1 8 6 7 .

TRANSISTOR TCD 100

Abstract: 3n123 teledyne transistor Transistor Bo 17 BU100
Contextual Info: TELEDYNE COMPONENTS EflE D • ûW bOa □GGt.5cì3 1 M LOW COST 3N123 SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR G E O M E T R Y 45Q ELECTRICAL DATA A B S O L U T E M A X IM U M R A T IN G PARAM ETER SYM BO L 3N123 U N IT S Collector to Base Voltage

Contextual Info: FMW10 h 7 > y ^ ^ / T ransistors FMW10 Amplifier Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor so>4V;Vvfn- • 1M & \f;£ 0 /D im e n s io n s Unit : mm 1) 7 , - n 2 (0 <T) 7 5>3t >?1£*5c £ nri'-So 2) 2(@<7) h 7 > y X ! > C D tS ttA 'f -5 77 T

1501a

Abstract: AC 1501A ac 1501a 12 TCM1512P TCM1506A 1512A
Contextual Info: 6961 72 4 TEXAS TELECOMMUNICATION CIRCUITS INSTR CL IN / I NTFC 5 5C 33907 D T-52-13-35 TYPES TCM1501A, TCM1506A, TCM1512À, TCM1513A TELEPHUNfc lUNt KiiuutK unlVERS D 2763, SEPTEMBER 1983 P DUAL-IN-LINE PACKAGE Electronic Replacement for Electromechanical

transistor bf 979

Abstract: Q62702-F610 C12B pnp vhf transistor
Contextual Info: ^ I 5SE D • . . flE3SbDS 0GG45fl4 T ■ SIEG PIMP Silicon Planar Transistor BF 979 S SIEMENS AK TI EN GES ELL SCH AF 5C 04584 D - BF 97 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 41867 .

IC 4047

Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA

BC807-40

Contextual Info: BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type Marking BC807-25 5B BC807-40 5C s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■

transistor bf 458

Abstract: transistor bf458 transistor bf 459
Contextual Info: 25C D • fl235b as 00044^5 T H S IE 6 ' rBF 457 BF 458 BF 459 NPN Silicon RF Transistors _"'-5C 0 4 4 9 5 SIE M E N S A K T IEN G ESE LLSC H A F for video and AF output stages BF 457, BF 4 58 and BF 4 5 9 are epitaxial NPN silicon planar transistors in TO 126 plastic

Contextual Info: IS0C0I1 C O M P O N E N T S 4886510 LTD ISOCOM ?5c d • 4aat,siD o o G o n t ?bo ■ iso_ 75C 00 196 INC / d C//- ^ 3 4N25, 4N26, 4N27, 4N28 OPTICALLY COUPLED ISOLATORS ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted Storage Tem perature . -55°C to + 1 5 0 °C

Contextual Info: BC807 BC808 HL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m BC807 = 5D BC807-16 = 5A BC807-25 « 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G

555 timer smps

Contextual Info: n z z S G S - T H O M S O N ^•7/. KfflD [^©[lL[i©¥[^©KilD©@ L6561 POWER FACTOR CORRECTOR PRO DU CT PREVIEW • VERY PRECISE ADJUSTABLE OUTPUT OVERVOLTAGE PROTECTION ■ MICRO POWER START-UP CURRENT 5C jATYP.) ■ VERYLOW OPERATING SUPPLY CURRENT (4mA TYP.)

CMBT4124

Contextual Info: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P -N transistor PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m M arking CMBT4124 = 5C _3.0_ 2.8 0.14 0.48 0.38 -^ p T 0 9 0.70 0.50 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 1.4 1.2

BCY59

Abstract: BCY 85 BCY58 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G
Contextual Info: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - 2 5C 0 4 3 0 6 BCY 58 BCY59 D - BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors

orega

Abstract: L6561 application L6561 fuse 2a 250v ETD29 L6561 AN litz wire 38 awg B1ET2910A BYT03-400 L6560
Contextual Info: SGS-TtiOMSON L6561 :ILI iriS3©K!lDgl POWER FACTOR CORRECTOR P R O D U C T P R E V IE W • VERY PRECISE ADJUSTABLE OUTPUT OVERVOLTAGE PROTECTION ■ MICRO POWERSTART-UP CURRENT 5C uATYP.) ■ V E R Y LO W OPERATING SUPPLY CURRENT (4mA TYP.) ■ INTERNAL START-UP TIMER

514256

Abstract: 514256-10 MSM514256 MSM514256-10 MSM514256-12 oki msm51426 A2E3
Contextual Info: O K I SEMICO ND UC T OR GROUP IDE D £ b?5M5MD Q0Q4E02 7 £ Q 5C B sennlcoicfltactog* MSM514256RS/JS/ZS 262,144-WORD X , -r-4L-x*-n _ 4-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM514256 is a new generation dynamic RAM organized as 262,144 words by 4 bits. The technology

st 9926

Abstract: 9926 mosfet mosfet 600V 50A
Contextual Info: Preliminary Data Sheet No. PD-9.926 International Rectifier i r g t i o o 5c m i 2 > Fast IGBT "HALF-BRIDGE” INT-A-PAK™ MODULES V CE = 1200V ^C DC = ^ 0 A • Rugged Design • Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant

Siemens 1836

Contextual Info: 2SC D • T-33-29 ô53SbOS QQQMHIB 4 « S I E 6 . BD 861 BD 863 BD 865 NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF 5C 04^ 13 ° Epibase p o w e r d arlington transistors 1 5 W BD 8 6 1 , BD 8 6 3 , and BD 8 6 5 are monolithic silicon NPN epibase power darlington transistors

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5C36 Microcontroller D ATA SHE E T D S -LM3S 5C 36 - 1 3 4 4 0 . 2 5 4 9 S P M S 237B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5C36 Microcontroller D ATA SHE E T D S -LM3S 5C 36 - 1 3 4 4 0 . 2 5 4 9 S P M S 237B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5C56 Microcontroller D ATA SHE E T D S -LM3S 5C 56 - 1 3 4 4 0 . 2 5 4 9 S P M S 241B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

cs 308

Abstract: Microprocessor Supervisor Circuit
Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5C31 Microcontroller D ATA SHE E T D S -LM3S 5C 31 - 1 3 4 4 0 . 2 5 4 9 S P M S 239B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5C56 Microcontroller D ATA SHE E T D S -LM3S 5C 56 - 1 3 4 4 0 . 2 5 4 9 S P M S 241B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated