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    Murata Manufacturing Co Ltd LQH5BPN1R2NT0L

    Power Inductors - SMD
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    Mouser Electronics LQH5BPN1R2NT0L 1,203
    • 1 $0.41
    • 10 $0.319
    • 100 $0.212
    • 1000 $0.192
    • 10000 $0.148
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    Murata Manufacturing Co Ltd LQH5BPN2R2N38L

    Power Inductors - SMD
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    Mouser Electronics LQH5BPN2R2N38L 780
    • 1 $0.61
    • 10 $0.396
    • 100 $0.302
    • 1000 $0.263
    • 10000 $0.21
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    Murata Manufacturing Co Ltd LQH5BPB2R2NT0L

    Power Inductors - SMD
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    Mouser Electronics LQH5BPB2R2NT0L 512
    • 1 $0.59
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    Murata Manufacturing Co Ltd LQH5BPZ2R2NT0L

    Power Inductors - SMD
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    Mouser Electronics LQH5BPZ2R2NT0L 495
    • 1 $0.47
    • 10 $0.298
    • 100 $0.235
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    Murata Manufacturing Co Ltd LQH5BPH2R2NT0L

    Power Inductors - SMD 2.2 UH 30%
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    Mouser Electronics LQH5BPH2R2NT0L 400
    • 1 $0.52
    • 10 $0.338
    • 100 $0.262
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    5BP 2N Datasheets Context Search

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    small signal transistor MOTOROLA

    Abstract: w21 transistor MOTOROLA small signal transistor 2N3821JTX PHW4101 FIDL 5Bp transistor MOTOROLA TRANSISTOR
    Text: MOTOROU Orderthis document by2N3621JTND SEMICONDUCTOR TECHNICAL DATA ● 2N3821JTX, JANS Processed per MlL4-19500/375 N4hannel, Depletion Mode Junction Field-Effect Transistor JFETs .designed for small-ignal, Iowoise amplifier applications. * ~,)> . .$$”


    Original     		by2N3621JTND 2N3821JTX, MlL4-19500/375 TM06AF 2N3821JTX PHW4101 2Ns21JmD small signal transistor MOTOROLA w21 transistor MOTOROLA small signal transistor FIDL 5Bp transistor MOTOROLA TRANSISTOR PDF

    2N3634 MOTOROLA

    Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
    Text: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn


    Original     		Orderth18 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, CHARACTERlST19 2N3634, 2N3635 2N3636, 2N3637 2N3634 MOTOROLA m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636 PDF

    2N3501 MOTOROLA

    Abstract: 2N3501 k5c transistor 2N3501JAN AICB
    Text: MOTOROU Orderthls document by 2N3501JANID SEMICONDUCTOR TECHNICAL DATA 2N3501JAN, JTX, JTXV, JANS Processed per MIL4-195001366 NPN Silicon SmallSignal Transistors .designed for genera~urpose switching and amplifier applications in hig~voltage .,!.\ ELECTRICAL


    Original     		2N3501JANID 2N3501JAN, MIL4-195001366 lPHX241011-2 2N3501 2N3501 MOTOROLA k5c transistor 2N3501JAN AICB PDF

    2N3506

    Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
    Text: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)


    Original     		bv2N850WWD 2N3506JTX, 2N3507JTX, TM05AD 2NW06 2NW07 300Vdc) 2N3506 1PHW41011-2 2NS50MWD 2N3506 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 15-ADO PDF

    M036

    Abstract: 2N3251AJAN PHM4101
    Text: MOTOROW Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3251AJAN/D e 2N3251AJAN, JTX Processed per MIL4-195001323 PNP Silicon Smal14ignal Transistors .designed for genera~urpose switching and amplifier applications. CASE 22*, TM06AA .,4., , ‘, ELECTRICAL CHARACTERlSTl~~#*25°C


    Original     		2N3251AJAN/D 2N3251AJAN, MIL4-195001323 Smal14ignal TM06AA PHM4101 2N3251AJANID M036 2N3251AJAN PDF

    2N3440 MOTOROLA

    Abstract: 2n3439 motorola MOTOROLA 2N3440 2N3439 LF036 Y14W 5bp 2n 2N3439JAN 2N3440 2N3440JTX
    Text: MOTOROU Orderthls document by 2N3439JANID SEMICONDUCTOR TECHNICAL DATA o 2N3439JAN, JTX, JTXV 2N3440JTX, JTXV Processed per MIL4-I 9500/368 NPN Silicon Small+ignal Transistors .designed for tighvoltage amplifier applications. MAXIMUM RATINGS Rsttng Symbol


    Original     		2N3439JANID 2N3439JAN, 2N3440JTX, 1PHW4101 2N3439JAN/D 2N3440 MOTOROLA 2n3439 motorola MOTOROLA 2N3440 2N3439 LF036 Y14W 5bp 2n 2N3439JAN 2N3440 2N3440JTX PDF

    2N2219A MOTOROLA

    Abstract: 2N2219A 2N2219AJAN 4101 transistor
    Text: MOTOROU SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219AJANID a 2N2219AJAN, JTX, JTXV, JANS Processed per MIL4-I 9500/251 NPN Silicon Small-ignal Transistors ., designed for genera~urpose switching and amplifier applications. CASE7$M, SWLE 1 T0205AD ~039


    Original     		2N2219AJANID 2N2219AJAN, T0205AD 2N22d9A 2N2219AJAN/D 2N2219A MOTOROLA 2N2219A 2N2219AJAN 4101 transistor PDF

    Q2N44

    Abstract: 06AF 2N44 motorola MN transistor 2N4416AJTX
    Text: MOTOROU Order this document by2N416AJTWD SEMICONDUCTOR TECHNICAL DATA o 2N4416AJTX, JTXV Processed per MlL-l 9500/428 N+hannel, Small+ignal Field Effect Transistor CASE 2W3, T=06AF .:’.~{.3” ELECTRICAL CHARACTERISTICS WA= #~@& *\A .*.<* Characterlstlc ., “$}$,w


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    w21 transistor

    Abstract: 2N3764 2N3764JTX MIL-19500 MOTOROLA LON motorola MN transistor Motorola transistor 358
    Text: . MoToRom Order this document by 2N3764~WD SEMICONDUCTOR TECHNICAL DATA ● 2N3764JTX, JTXV, JANS Processed per MIL+-19500/396 PNP Silicon Smal14ignal Transistor .designed for genera~urpose switching applications. ● Emtisr+ase Vohge * Colleotor Current — Cotinuous


    Original     		2N3764 2N3764JTX, Smal14ignal TW06AB 1PHW4101 2N37WTWD w21 transistor 2N3764JTX MIL-19500 MOTOROLA LON motorola MN transistor Motorola transistor 358 PDF

    motorola g18

    Abstract: 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S
    Text: MOTOROU o Orderthls document by 2N3019SJANID SEMICONDUCTOR TECHNICAL DATA ttl ,$$>. *t~i”*J,:~$< >,. j/ ,>, ,.!$: .> ~>‘ 1111~ ~~~ ‘‘}1lb “,., 2N3019SJAN, dTX, dTXV, dANS 2N3700dAN, JTX, JTXV, JANS I\o Processed per MlL4-19500/391 NPN Silicon Small+ignal


    Original     		2N3019SJANID 2N3019SJAN, 2N3700dAN, MlL4-19500/391 2N3019S T0205AD 1PHX24101 motorola g18 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S PDF

    MOTOROLA 2n2920

    Abstract: 2N2920 2N2920JAN
    Text: MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN, JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,.:,>$’ \.>.l , c*\~ ~!.?,:$,! a- 9500/355 ual N,PNSilicon Small+ ignal Transistors .!. 3 Unit Vdc Vdo VEBO Emitter+ase Vohge


    Original     		2N2920JANID 2N2920JAN, S50SS. 1PHW4101 2N292W~ MOTOROLA 2n2920 2N2920 2N2920JAN PDF

    Condor c-fi 30

    Abstract: w33 transistor 2N3735 2N3737 2N3737JTX 2N3735J 2N3735JTX 2N3737J desi 30 2N3735 MOTOROLA
    Text: MOTOROU Order this document by2N3735JT~ SEMICONDUCTOR TECHNICAL DATA o 2N3735JTX, JANS 2N3737JTX Processed per MIL4-I NPN Silicon Smal14ignal tlb ,11 9500/395 Transistors . . .deeigned for genera~urpoee switching and amplifier applications. 2N3737 is Not Recommended for New Desi$#$+;’


    Original     		by2N3735JT~ 2N3735JTX, 2N3737JTX Smal14ignal 2N3737 2N3735 T0205AD 2N3737 TG206AB 1PHX24101 Condor c-fi 30 w33 transistor 2N3735 2N3737JTX 2N3735J 2N3735JTX 2N3737J desi 30 2N3735 MOTOROLA PDF

    2N4931

    Abstract: GE-3 PNP transistor 2N3743 2N3743JTX
    Text: MOTOROU Orderthls document by2N37-D SEMICONDUCTOR TECHNICAL DATA a ,+!$ ,*: 1. ~t , ~ t,. ~, ., .6> ~ { , ~s. II 2N3743JTX, JTXV 2N4931JTX, JTXV ,11 Processed per MlL4-19500/397 : ‘t. 4 A: Plmlachnologle: ‘L Operallon qejlai .<. ?~, t:,~‘ PNP Silicon, High Voltage


    Original     		by2N37-D 2N3743JTX, 2N4931JTX, MlL4-19500/397 1PHX241011-2 2N37WTWD 2N4931 GE-3 PNP transistor 2N3743 2N3743JTX PDF

    L1201

    Abstract: 2N2060J 2N2060JTX small signal transistor
    Text: , MOTOROW Order thie document by 2N2080JWD SEMICONDUCTOR TECHNICAL DATA ● *{iv \ :,+ \ ‘! .,? .>W, : \ .,i. ,: . ~ ,:, , , IIUlp 2N2060JTX, JANS Processed per MIL4-195001270 J ’11. ~1. .8:6 : qo ~ Dual NPN Silicon Smal14ignal Transistor .dasignedfor genera~urpose amptifierap~oations.


    Original     		2N2080JWD 2N2060JTX, MIL4-195001270 Smal14ignal 1PHW4101 2N20MJTND L1201 2N2060J 2N2060JTX small signal transistor PDF

    to225aa

    Abstract: to225a TO-225AA B52200F006 2N6237 2N6241 2N6241 equivalent 2N6239 2N6240 2N6238
    Text: MOTOROLA Order this document by 2N6237/D SEMICONDUCTOR TECHNICAL DATA 2N6237 thru 2N6241 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning


    Original     		2N6237/D 2N6237 2N6241 2N6237/D* to225aa to225a TO-225AA B52200F006 2N6237 2N6241 2N6241 equivalent 2N6239 2N6240 2N6238 PDF

    2N6507 MOTOROLA

    Abstract: 2N6506 applications 2N6508 MOTOROLA 2N6509 2N6504 MOTOROLA 2N6507 2N6504 2N6506 2N6504-D 221A-04
    Text: MOTOROLA Order this document by 2N6504/D SEMICONDUCTOR TECHNICAL DATA 2N6504 thru 2N6509* Thyristors Silicon Controlled Rectifiers *Motorola preferred devices . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.


    Original     		2N6504/D 2N6504 2N6509* 21A-04 O-220AB) 2N6504/D* 2N6507 MOTOROLA 2N6506 applications 2N6508 MOTOROLA 2N6509 2N6504 MOTOROLA 2N6507 2N6504 2N6506 2N6504-D 221A-04 PDF

    2N6346A

    Abstract: 2N6346 2N634 2N6347A 2N6348A 2N6349A 380 volt 50 hz 50 amp triac 221A-04 2N6342 2N6349
    Text: MOTOROLA Order this document by 2N6346A/D SEMICONDUCTOR TECHNICAL DATA Triacs 2N6346A thru 2N6349A Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon


    Original     		2N6346A/D 2N6346A 2N6349A 2N6346A/D* 2N6346A 2N6346 2N634 2N6347A 2N6348A 2N6349A 380 volt 50 hz 50 amp triac 221A-04 2N6342 2N6349 PDF

    2n6439

    Abstract: UT25 VK200 Ferox
    Text: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    Original     		2N6439/D 2N6439 2N6439/D* 2n6439 UT25 VK200 Ferox PDF

    2N6348 equivalent

    Abstract: 2N6342 2N6343 MOTOROLA triac 2n6348 2N6343 2N6349 2N6347 2N6348 2N6345 2N6346
    Text: MOTOROLA Order this document by 2N6342/D SEMICONDUCTOR TECHNICAL DATA 2N6342 thru 2N6349 Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon


    Original     		2N6342/D 2N6342 2N6349 2N6342/D* 2N6348 equivalent 2N6342 2N6343 MOTOROLA triac 2n6348 2N6343 2N6349 2N6347 2N6348 2N6345 2N6346 PDF

    2N6439

    Abstract: 2n6439 TRANSISTOR
    Text: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.


    Original     		2N6439/D 2N6439 2N6439 2N6439/D* 2N6439/D 2n6439 TRANSISTOR PDF

    2N6027 MOTOROLA

    Abstract: 2N6028 MOTOROLA 2N6027 2n5270 2N6028 PUT 2N6027 PUT 2N6028 2N6027 CIRCUIT 2N6027-D 2n6027 PUT
    Text: MOTOROLA Order this document by 2N6027/D SEMICONDUCTOR TECHNICAL DATA 2N6027 2N6028 Programmable Unijunction Transistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to “program” unijunction characteristics such as


    Original     		2N6027/D 2N6027 2N6028 2N6027/D* 2N6027 MOTOROLA 2N6028 MOTOROLA 2N6027 2n5270 2N6028 PUT 2N6027 PUT 2N6028 2N6027 CIRCUIT 2N6027-D 2n6027 PUT PDF

    2N6233

    Abstract: 2N6235
    Text: O rd er th is docum ent b y 2N6233/D M MOTOROLA SEM IC O N D U C TO R S P.O. BOX 20912 • PHO ENIX. A R IZ O N A 85036 5 AMPERE HIGH VOLTAGE NPN SILICON TRANSISTORS . . . useful fo r high-voltage m edium power a p p lica tio n s such as sw itch ing regulators.


    OCR Scan     		2N6233/D 2N6233 2N6235 PDF

    2N6439

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    OCR Scan     		2N6439/D 2N6439 2N6439 PDF

    kd 2902

    Abstract: 2N7008
    Text: Order this document by 2N7008/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Small-Signal Field Effect Transistor N -C hannel E n h an cem en t-M o d e S ilic o n G ate T M O S N -C H A N N E L S M A L L -S IG N A L T M O S FET . . . are d e signed fo r h ig h vo lta g e , hig h speed a p p lica tio n s such as


    OCR Scan     		2N7008/D kd 2902 2N7008 PDF