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    59SM Search Results

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    59SM Price and Stock

    Samtec Inc DWM-32-59-SM-D-300

    .050" X .100" FLEX STACK, FLEXIB
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    DigiKey DWM-32-59-SM-D-300 Bulk
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    JRH ELECTRONICS 806-012-MT18-59SMB

    Circular connector
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    DigiKey 806-012-MT18-59SMB 1
    • 1 $3823.72
    • 10 $3823.72
    • 100 $3823.72
    • 1000 $3823.72
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    JRH ELECTRONICS 806-012-NF18-59SMA

    Circular connector
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    DigiKey 806-012-NF18-59SMA 1
    • 1 $3823.72
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    • 100 $3823.72
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    JRH ELECTRONICS 806-012-Z118-59SMD

    Circular connector
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    DigiKey 806-012-Z118-59SMD 1
    • 1 $5298.84
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    JRH ELECTRONICS 806-019-ZR18-59SMF

    Circular connector
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    DigiKey 806-019-ZR18-59SMF 1
    • 1 $3657.44
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    59SM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TXO-29SM

    Abstract: VC-TCXO 19.68 59SM TXO-29SM-3 Temperature compensated oscillator vTXO
    Text: TXO-29SM/59SM SERIES SMD TEMPERATURE COMPENSATED OSCILLATOR The TXO-29SM/59SM are surface mount TCXOs Temperature Compensated Crystal Oscillator that features very tight stability over a wide temperature range. An internal trimmer is a standard feature used to tune


    Original
    TXO-29SM/59SM TXO-29SM VC-TCXO 19.68 59SM TXO-29SM-3 Temperature compensated oscillator vTXO PDF

    Untitled

    Abstract: No abstract text available
    Text: TXO-29SM/59SM SERIES SMD TEMPERATURE COMPENSATED OSCILLATOR The TXO-29SM/59SM are surface mount TCXOs Temperature Compensated Crystal Oscillator that features very tight stability over a wide temperature range. An internal trimmer is a standard feature used to tune


    Original
    TXO-29SM/59SM TXO-29SM PDF

    D018

    Abstract: D019 D032
    Text: T O S H IB A THMY25N01A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The TH M Y25N 01A is a 33,554,432-w ord by 64-bit synchronous dynamic RAM module consisting of 16 TC 59SM 708A FT/A FTL DRAMs and an unbuffer on a printed circuit board.


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    THMY25N01 432-WORD 64-BIT THMY25N01A TC59SM708AFT/AFTL 168-pin 64-bit D018 D019 D032 PDF

    THMY6416H1EG-80

    Abstract: No abstract text available
    Text: TOSHIBA THMY6416H1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THM Y6416H 1EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC 59SM 708FT DRAMs and an unbuffer on a printed circuit board.


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    THMY6416H1EG-80 216-WORD 64-BIT THMY6416H1EG TC59SM708FT 64-bit THMY6416H1EG-80 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY6432G1 EG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The TH M Y6432G 1EG is a 33,554,432-w ord by 64-bit synchronous dynamic RAM module consisting of 16 TC 59SM 708FT DRAMs and an unbuffer on a printed circuit board.


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    432-WORD 64-BIT THMY6432G1 EG-80# Y6432G 432-w 708FT 64-bit PDF

    A70 Circuit Diagrams

    Abstract: A70L 2a 280
    Text: TO SH IBA THLY12N01A70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The T H LY 12N 01A is a 16,7 7 7 ,2 1 6 -word by 64-bit synchronous dynamic RAM module consisting of eight T C 59SM 716A FT/A FTL DRAMs on a printed circuit board.


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    THLY12N01 216-WORD 64-BIT THLY12N01A TC59SM716AFT/AFTL 75/75L A70 Circuit Diagrams A70L 2a 280 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLY12N1MB70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The TH LY12N 1M B is a 16,77 7 ,2 1 6 -word by 64-bit synchronous dynamic RAM module consisting of four TC 59SM 816B FT /B FT L DRAMs on a printed circuit board.


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    THLY12N1 216-WORD 64-BIT THLY12N1MB TC59SM816BFT/BFTL 75/75L PDF

    D018

    Abstract: D019 D032 D051 D036
    Text: TOSHIBA THMY25E01A70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The TH M Y 25E01A is a 33,554,432-w ord by 72-bit synchronous dynamic RAM module consisting of 18 TC 59SM 708A FT/A FTL DRAMs and an unbuffer on a printed circuit board.


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    THMY25E01 432-WORD 72-BIT THMY25E01A TC59SM708AFT/AFTL 72-bit 75/75L D018 D019 D032 D051 D036 PDF

    TC59SM

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S M 816/08/04B FT/B FTL-70,-75f-80 TOSHIBA MOS DIGIDAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4.194.304-W ORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


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    TC59S 816/08/04B FTL-70 -75f-80 16-BITS 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59SM816BFT/BFTL 304-words TC59SM808BFT/BFTL TC59SM PDF

    TC59SM808BFT

    Abstract: THMY25E10B70 cke 13
    Text: TO SH IBA THMY25E10B70,75,80 TENTATIVE T O S H IB A H Y B R ID D IG ITA L IN T EG R A T ED C IRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The T H M Y 25E10B is a 33,554,432-w ord by 72-bit synchronous dynamic RAM module consisting of


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    THMY25E10B70 432-WORD 72-BIT THMY25E10B TC59SM808BFT 168-pin PC133 cke 13 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THMY25E10B70,75,80 TENTATIVE T O S H IB A H Y B R ID D IG ITA L IN T EG R A T ED C IRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The T H M Y 25E10B is a 33,554,432-w ord by 72-bit synchronous dynamic RAM module consisting of


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    THMY25E10B70 432-WORD 72-BIT 25E10B 432-w 808BFT 72-bit THMY25E10B) PDF