19Sg
Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.
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Original
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MIL-S-19500/65B
19500/65A
2N388.
UIL-S-19500165B
514AD
19Sg
WN smd transistor
2N388
1027CB
2N388 JAN equivalent
smd transistor marking da
SMD TRANSISTOR MARKING km
transistor smd marking mx
SMD TRANSISTOR MARKING ME
2d SMD NPn TRANSISTOR
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PDF
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CM05B
Abstract: D65084 1N78 1N5764 1N5764MR C65101
Text: MIL-s-19500&l EL 19November 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE,GALLIUM ARSENIDE, MIXER TYPE1N5764, and 1N5764MR 1N5764M , . 1. ScOPE 1.1Scope.Thisspecification covers thedetailrequirements forGal!iumArsenide, Luw Barrier, HighSee:itivity,
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L-s-19500
19November
TYPE1N5764,
1N5764M
1N5764MR
DMR1426
JAN66WHICH
CM05B
D65084
1N78
1N5764
1N5764MR
C65101
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PDF
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2N501A
Abstract: No abstract text available
Text: MI L- S-19500/62B AMENDMENT 3 22 March 1982 SUPERSEDING AMEN O14ENT 2 6 July 1970 ● I MILITARY SEMICONDUCTOR TRANSISTOR, PNP, TYPE 2N501A a part of This amendment forms dated 26 July 1968, and is approved of the Department of Defense. Military for 1.4, cob~ column:
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Original
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S-19500/62B
O14ENT
2N501A
L-s-19500/62B
2N501A
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PDF
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Untitled
Abstract: No abstract text available
Text: r ^ r A /Z H Hl = j rF ^n - i^ U V U n U L ^ iU ^ L rn J January 7, 1998 RECTIFIER, up to 150V, 1.8A, 30ns 1N6073 iN Rn74 1N6074 1N6075 FF05 f f in FF10 FF15 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE
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OCR Scan
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1N6073
1N6074
1N6075
TEL805-498-2111
1N6075
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PDF
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Scans-0016000
Abstract: No abstract text available
Text: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart
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OCR Scan
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00D0125
MIL-S-19500/226B
MIL-S-19500/226A
1N3666U)
MIL-S-19500.
-55aC
HIL-S-19500/226B
S961-1161-1)
Scans-0016000
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PDF
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Untitled
Abstract: No abstract text available
Text: □IXYS Alabama A ll Am erican Huntsville, AL 205-837-1555 Future Electronics Huntsville, AI. 205-830-2322 N u H orizons Huntsville, AL 205-722-9330 Arizona Future Electronics Phoenix, AZ 602-968-7140 C alifornia North A ll Am erican San Jose, CA 408-441-1300
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PDF
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2N1042
Abstract: 2N1043 2N1044 2N1045 Germanium power 3011 fe
Text: ê MJL-S-19500/137C 2l_Jung^9,n _ SUPERSEDING MIL-S-19500/137B 7 A p ril 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, POWER f\AC i irL O ft\fi r\An rrnti/MT/^ti m n u u u n Oxti ¿¿'iau?«; This specification Is m andatory fo r use by a ll D epart
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OCR Scan
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ML-S-19500/137C
MIL-S-19500/137B
2N1042
2N1043
2N1044
2N1045
2N1043
2N1044
Germanium power
3011 fe
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PDF
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JAN 1N4150-1
Abstract: JANS1N4150-1 JANS1N6640 1N3600 1N4150-1 1N4150UR-1 3pda Q033b D0213 Scans-0016000
Text: MIL SPECS H4 E D 00G0125 Q033bfl7 [The documentationand process conversion | Imeasures necessary to comply with this | |revision shaLl be completed by 23 MAR 94. |
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OCR Scan
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D0DD125
0033bfi?
MIL-S-19500/231F
MIL-S-19500/231
1N3600,
1N4150-1,
1N4150UR-1
JANSIN4150-1
MIL-S-19500/609
JANS1N6640
JAN 1N4150-1
JANS1N4150-1
JANS1N6640
1N3600
1N4150-1
3pda
Q033b
D0213
Scans-0016000
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PDF
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OC 74 germanium transistor
Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Text: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart m ents and Agencies of the Department of Defense.
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OCR Scan
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MIL-S-19500/125C
-S-19500/125B
2N1500
OC 74 germanium transistor
2N1500
pnp germanium transistor
NEW JERSEY SEMICONDUCTOR uz
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PDF
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N2150
Abstract: 2n7151 cage 11851 vfd S1 DELTA t41l FCABLE11 2N2151 546i 00CU Transistor CR64
Text: I ● r I I Ill e documentation ana process conversion medsures necessary to comply .itn this revision shall be 1991. co.pletea by 10 C&ok I I I I HIL-S-1950+3/Z77D I 10 JLUIe 1991 SUPERSEDING MI L- S-19 SO0/277C 12 August 1968 MILITARY SEH!CONCYUCTOR SPECIFICATIOW
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Original
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HIL-S-1950
3/Z77D
SO0/277C
2N21S0
2N2151
S-195CW.
2N2150
2N7151
N2150
2n7151
cage 11851
vfd S1 DELTA
t41l
FCABLE11
546i
00CU
Transistor CR64
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PDF
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str g 5551
Abstract: str G 5551 47 D-85540 a1232 R-17778 D-85551 D-12277 str f 6655 Taiwan Oasis Enterprise Co., LTD
Text: /~ \T P rj= E - ^ / 7 \ /A j U a Sales Offices, Distributors & Representatives May 1999 Altera Regional Offices NORTHERN CALIFORNIA CORPORATE HEADQUARTERS Altera Corporation 101 Innovation Drive San Jose, CA 95134 TEL: (408)544-7000 FAX: (408)544-7755 Altera Corporation
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OCR Scan
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B-201
RUS-127434
TR-91090/Istanbul
str g 5551
str G 5551 47
D-85540
a1232
R-17778
D-85551
D-12277
str f 6655
Taiwan Oasis Enterprise Co., LTD
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PDF
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2N760A
Abstract: MC 331 transistor 2N757A transistor WFA 2N759A 945 U3d marking MIL-S-19500/218
Text: MIL-S-19500/218A 23 November 1966 SUPEKSMJING M IL-S-19500/218 SigC 11 October 1961 (See 6 .4) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N757A, 2N750A AND 2N760A This specification is mandatory for use by a ll Depart
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OCR Scan
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MIL-S-19500/218A
MIL-S-19500/218
2N757A,
2N759A
2N760A
2N757A
2N760A
MC 331 transistor
transistor WFA
945 U3d marking
MIL-S-19500/218
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PDF
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pnp germanium transistor
Abstract: boonton 91-6c
Text: M IL -S-19500/77C 6 March 1968 SUPERSEDING M IL -T -19500/77B 5 Ju ly 1961 See 6 . 3. MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, P N P , GERMANIUM, LOW-POWER m tm w 1 lJtTC j oxto n o £ 1N O Î 7U T his sp e cific atio n is m an d ato ry fo r u se by a ll D e p a rt
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OCR Scan
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MIL-S-19500/77C
19500/77B
pnp germanium transistor
boonton 91-6c
|
PDF
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003431b
Abstract: 1N3038B HA 4016 1N3016B 1N3016B-1 1N3051B 1N3821A 1N3821A-1 1N3828A JANTX1N3821A-1
Text: MIL SPEC S 44E D • 0 0 0 0 12 5 0 Q 3 4 3G 7 05b ■ MILS The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 March 1994 INCH-POUND MIL-S -19500/115 H 20 December 1993 SUPERSEDING HIL-S-19500/115G
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OCR Scan
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QQ00125
0Q343G7
MIL-S-19500/115H
MIL-S-19500/115G
1N3821A
1N3828A,
1N3016B
1N3051B,
1N3821A-1
1N3828A-1,
003431b
1N3038B
HA 4016
1N3016B-1
1N3051B
1N3828A
JANTX1N3821A-1
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PDF
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|
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2N5807
Abstract: 2N5806 thyristor TAG 20 600 2N5809 2N5808 KS 300 A TRIODE thyristors 2N58 thyristor tag 83 thyristor circuit 1970 lm 4221 ii
Text: M IL-S-19500/U6 20 Augngt 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRIODE THYRISTOR BI-DIRECTIONAL ,SILICON, TYPES 2N58CS THROUGH 2N5S'09 This specification Is mandatory for use by all D epart ments and Agencies of the Department of Defense. I.
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OCR Scan
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MIL-S-19500/
MIL-S-19500
2N5807
2N5806
thyristor TAG 20 600
2N5809
2N5808
KS 300 A TRIODE thyristors
2N58
thyristor tag 83
thyristor circuit 1970
lm 4221 ii
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PDF
|
STR 6267
Abstract: str f 6267 str 6267 f str 5707 STR F 9208 L datasheet str 5707 STR D 5707 str 6853 F918 f4148
Text: DISTRIBUTORS July 1997 ALABAMA Hamilton Hallmark 4890 University Sq., #1 Huntsville, AL 35805 P#205/837-8700 F#205/830-2565 Marshall 3313 Memorial Pkwy So., 150 Huntsville, AL 35803 P#205/881-9235 F#205/881-1490 Pioneer 4835 University Square Huntsville, AL 35816
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Original
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51itzerland
3-15F,
Omraniye-81257-Omraniye
STR 6267
str f 6267
str 6267 f
str 5707
STR F 9208 L
datasheet str 5707
STR D 5707
str 6853
F918
f4148
|
PDF
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transistor 2N 2222 h 331
Abstract: transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4
Text: I INCH-PQUKITT M IL-S-l9500/447A ER 10 J u n e 1991 ctiDrDcrntkir u * nu MIL-S-19500/447(ER) 19 February 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, MPN, SILICON, POWER, T V O r I ITL 9 1 I C Û O C , u1nA nM IT Va nA Mn uf\ ul An Un Ti Va Vi
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OCR Scan
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MIL-S-19500/447A
MIL-S-19500/447
2N5926,
MIL-S-19500.
5961-A006)
transistor 2N 2222 h 331
transistor marking wv4
GI 312 diode
NBX 2102
marking 1Nco
2N5926 JANTX
rial mci
TRANSISTOR wv4
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PDF
|
4066 Handbook
Abstract: 2N3103 2n3033 2N3091 2N3093 2N3095 2N3097 2N3098 2N3099 2N3101
Text: K1L-S-19500/280A EC 6 .Tannery 197» SUPERSEDING HTL-S-19500/280(NAVY) 2 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTOR (CONTROLLED RECTIFIER). SILICON TYPES 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 2N3105, AND 2N3106
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OCR Scan
|
K1L-S-19500/280A
MTL-S-19500/280
2N3091,
2N3093,
2N3095,
2N3097,
2N3098,
2N3099,
2N3101,
2N3103,
4066 Handbook
2N3103
2n3033
2N3091
2N3093
2N3095
2N3097
2N3098
2N3099
2N3101
|
PDF
|
O7703
Abstract: ic sj 2036 2N1489 2N1490 oc142 2N148B b961 2N1487 2N1488 Transistor 1967
Text: M IL -S -19500/208B Ü4 A ugust 1967 SUPERSEDING M IL -S - 19500/208A EL 23 O cto b e r 1964 (See 6. 2) M ILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, H IGH-POW ER TY PES 2N1487, 2N1488, 2N1489, AND 2N1490 T h is s p e c ific a tio n is m an d ato ry fo r u se by a ll D e p a rt
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OCR Scan
|
MIL-S-19500/208B
19500/208A
2N1487,
2N1488,
2N1489,
2N1490
2N1487
2N1489
2N1488
O7703
ic sj 2036
2N1490
oc142
2N148B
b961
Transistor 1967
|
PDF
|
2n491a
Abstract: Helipot 2N469A 2N489A 2N490A MXL-STD-750 2N2417A 2N2418A 2N2422A 2N494A
Text: MUrS~19500/75B 18 October 1986 SUPERSEDING n / rrra _ t a r nnM * w w w \ j f ««#4 25 October 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, PN, SILICON UNIJUNCTION TYPES 2N489A THROUGH 2N494A. TX2N489A THROUGH TX2N404A. 2N2417A THROUGH 2N2422A, AND TX2N2417A THROUGH TX2N2422A
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OCR Scan
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MH/-S-19500/75B
2N489A
2N494A.
TX2N489A
TX2N494A.
2N2417A
2N2422A,
TX2N2417A
TX2N2422A
2n491a
Helipot
2N469A
2N490A
MXL-STD-750
2N2418A
2N2422A
2N494A
|
PDF
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TX2N1724
Abstract: 2N1724 2N1722 ADE350
Text: M IL -S -1 9 5 0 0 /2 6 2 F 19 February 196? SUPERSEDING M IL -S -1 9 5 0 0 /2 6 2 E 25 O ctober 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, HIGH-POWER T Y PE S 2N 1722, TX2N 1722, 2N 1724, AND TX2N 1724 T h is sp e c ific a tio n i s m andatory fo r u s e by a ll D ep a r t
|
OCR Scan
|
MIL-S-19500/262F
MIL-S-19500/262E
2N1722,
TX2N1722,
2N1724,
TX2N1724
1969-343-225/J16
TX2N1724
2N1724
2N1722
ADE350
|
PDF
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ygc 801
Abstract: chip ygc 801 yx 801 2N6966 2N6967 801 ygc 2N6969 2N6968 yx 801 ic DIODE dla 9-F
Text: Mil S-19500/569 IS September 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL. SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS This specification Is approved for use by a ll Depart ments and Agencies of the Department of Defense.
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OCR Scan
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MIL-S-19500/569
2N6966,
2N6967,
2N6968,
2N6969
MIL-S-19500.
T0-213AA.
ygc 801
chip ygc 801
yx 801
2N6966
2N6967
801 ygc
2N6968
yx 801 ic
DIODE dla 9-F
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PDF
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GC102
Abstract: 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406
Text: G-TUO -CE} INC D 5 D E I 3 7 7 7 4 7 S OGGOOt ,4 S I i i u i u i 7v ; c i o 2 12/16MHz PC/AT Compatible C h ip set Features Description • Highly Integrated PC/AT Com patible Three Chip Set. The GC101/GC102 is a fully IBM PC/AT compatible chip set support
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OCR Scan
|
377747S
12/16MHZ
16MHz
12MHz
GC101/GC102
16MHz.
/RAS40
/RAS6080
RAS40
GC102
8088 motherboard schematics
ASC 8.000MHz crystal oscillator
cpu 416-2 DP
CQA03
coa030
sd 7406
ero 1818
74ALS245
TI HA 7406
|
PDF
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BS2779 BSP THREAD
Abstract: IEC60079-14 EX-35-B-1-0-20-M20 M32 nylon cable gland 602 GB Series AMPHENOL dts01 galvanised conduit hazardous area ZP-C-2520-12 Radsok Amphenol Radsok
Text: Amphenol Cable Glands and Cord Grips 12-055 Amphenol Table of Contents Introduction Amphenol® Cable Glands Page Number 1 2-3 ATEX Approved Glands Featuring Elastometric Seals EX-20 4-5 EX-25 6-7 EE-30 8-9 EX-35 10-11 EX-40 12-13 EX-45 14-15 EE-RG 16-17
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Original
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EX-20
EX-25
EE-30
EX-35
EX-40
EX-45
EX-50
EX-55
EX-60
EX-65
BS2779 BSP THREAD
IEC60079-14
EX-35-B-1-0-20-M20
M32 nylon cable gland
602 GB Series AMPHENOL
dts01
galvanised conduit hazardous area
ZP-C-2520-12
Radsok
Amphenol Radsok
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PDF
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