Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    564 SOT23 Search Results

    564 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    564 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DALE R1F resistor

    Abstract: DALE R1F MAX1647 MBRS340T3 TPSE686M020R0150 35CV150GX IRF7303 MAX1648 MAX745 MAX745EVKIT
    Text: MAX745 Evaluation Kit _Component Suppliers SUPPLIER* AVX Dale-Vishay International Rectifier IRC Motorola Sanyo Sumida PHONE FAX 803 946-0690 (402) 564-3131 (310) 322-3331 (512) 992-7900 (602) 303-5454 (619) 661-6835 (847) 956-0666 (803) 626-3123


    Original     		PDF MAX745 300kHz MAX745EVKIT MAX745 DALE R1F resistor DALE R1F MAX1647 MBRS340T3 TPSE686M020R0150 35CV150GX IRF7303 MAX1648 MAX745EVKIT

    Untitled

    Abstract: No abstract text available
    Text: Using the UCC28250EVM-564 User's Guide Literature Number: SLUU441A September 2010 – Revised October 2011 User's Guide SLUU441A – September 2010 – Revised October 2011 Half-Bridge DC-to-DC Converter With Secondary-Side Control 1 Introduction This EVM is to aid in evaluating UCC28250 PWM device with secondary-side control in DC-to-DC


    Original     		PDF UCC28250EVM-564 SLUU441A UCC28250

    rtd pt100 interface to 8051

    Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
    Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515


    Original     		PDF OPA340PA: ADS7816P: 12-Bit 200KHz OPA2337PA: ADS7822P: INA125UA: OPA680U: OPA547F: rtd pt100 interface to 8051 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm

    4435 mosfet

    Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
    Text: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展


    Original     		PDF APM70N03 APM3005/7/9N APM2509/6/4N MO-23/25/26/89, SC-70 0V/20V, 30mohm /55mohm~ APM2300A/2322/2324, APM2310/2320/2306, 4435 mosfet APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310

    4001 4011 cmos

    Abstract: 4049 DIP14 4013 datasheet hct lcx 574 CMOS 4541 str 4512 C3245 4017 14 pin package CMOS4000 hcf 4541 be
    Text: Surface mounting packages Standard Logic ICs SO-8 SO-14 SO-16L SO-16 SO-20 SO-24 Selection guide TSSOP14 SOT23-8L TSSOP20 TSSOP16 SOT23-5L SOT323-5L Flip-Chip4 TSSOP48 TSSOP24 µFBGA42 Package TFBGA54 TFBGA96 H inch W (tape width mm) P (mm) D (mm) SO-8, TFBGA42


    Original     		PDF SO-14 SO-16L SO-16 SO-20 SO-24 TSSOP14 OT23-8L TSSOP20 TSSOP16 OT23-5L 4001 4011 cmos 4049 DIP14 4013 datasheet hct lcx 574 CMOS 4541 str 4512 C3245 4017 14 pin package CMOS4000 hcf 4541 be

    DIODE D29 -08

    Abstract: No abstract text available
    Text: Product specification BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23


    Original     		PDF BSR302N PG-SC-59 L6327 DIODE D29 -08

    BSR302N

    Abstract: GPS09473 HLG09474 L6327 GS1660
    Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated


    Original     		PDF BSR302N PG-SC-59 L6327 BSR302N GPS09473 HLG09474 L6327 GS1660

    GS1660

    Abstract: BSR302N GPS09473 HLG09474 L6327
    Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated


    Original     		PDF BSR302N PG-SC-59 L6327 GS1660 BSR302N GPS09473 HLG09474 L6327

    Untitled

    Abstract: No abstract text available
    Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated


    Original     		PDF BSR302N PG-SC-59 PG-SC-59 L6327 JESD22-C101-HMB

    DIODE D29 -08

    Abstract: No abstract text available
    Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated


    Original     		PDF BSR302N PG-SC-59 PG-SC-59 L6327 DIODE D29 -08

    HLG09474

    Abstract: No abstract text available
    Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated


    Original     		PDF BSR302N PG-SC-59 L6327 HLG09474

    lcx 574

    Abstract: STR 4512 HC 4093 4001 4011 cmos HC 40106 4017 14 pin package 4011 cmos logic gate HC 4011 logic gate hcf 4541 equivalent hct 4049
    Text: Standard Logic ICs Selection guide August 2007 www.st.com/logic Family selector HCT 0 to VCC 4 12 4.5 to 5.5 0 to VCC 4 12 AC 2 to 6 0 to VCC 24 4 ACT 4.5 to 5.5 0 to VCC 24 4 VHC 2 to 5.5 0 to 5.5 8 4 VHCT 4.5 to 5.5 0 to 5.5 8 4 V1G 2 to 5.5 0 to 5.5 8 4


    Original     		PDF DIP-14/16 DIP-14 DIP-24 SGSTDLOG0307 lcx 574 STR 4512 HC 4093 4001 4011 cmos HC 40106 4017 14 pin package 4011 cmos logic gate HC 4011 logic gate hcf 4541 equivalent hct 4049

    4541B

    Abstract: 4098B 40106B 4034b hcf 4052 datasheet rs 4011b 4039B 4013B 4009UB logos 4012B
    Text: LO 2.5V Vi Top Io Tpd VO With 3.6V Input/Output Tolerance SYMBOL Vcc W VCX VERY HIGH SPEED LOGIC PARAMETER VALUE UNIT 1.8 to 3.6 V Input Voltage 0 to 3.6 V Operating Temperature -40 to 85 °C 24 mA @ Vcc= 2.3V 18 mA @ Vcc= 1.8V 6 mA 3.2* ns Supply Voltage


    Original     		PDF 4000B 4030B, 4070B 4069UB, 4502B 4007UB, 4009UB, 4010B, 4041UB, 4077B 4541B 4098B 40106B 4034b hcf 4052 datasheet rs 4011b 4039B 4013B 4009UB logos 4012B

    74 HC 273A

    Abstract: hcf 4052 datasheet 4026B data sheet HC 40106 4039B 4027B 4093B 4013B 4081b DATAsheet 4022B
    Text: 3.3V SYMBOL Vcc LCX WITH 5V INPUT/OUTPUT TOLERANCE PARAMETER VALUE UNIT 2.7 to 3.6 V Input Voltage 0 to 5.5 V SO Tube 74LCXxxxM Operating Temperature -40 to 85 °C SO (T&R) 74LCXxxxMTR 24 mA TSSOP (Tube) 74LCXxxxT* 4 (TYP)* ns TSSOP (T&R) 74LCXxxxTTR 74LCX16xxxTTR 74LCX16xxxATTR


    Original     		PDF 74LCXxxxM 74LCXxxxMTR 74LCXxxxT* 74LCXxxxTTR 74LCX16xxxTTR 74LCX16xxxATTR 74LCX16xxxT* 74LCX 74 HC 273A hcf 4052 datasheet 4026B data sheet HC 40106 4039B 4027B 4093B 4013B 4081b DATAsheet 4022B

    circuit diagram of 13.56MHz RF Generator

    Abstract: schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz DRF1200 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz
    Text: Application Note 1811 December 2008 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET


    Original     		PDF DRF1200 DRF1200/Class-E an6-13131-1-ND DRF1200 140-XRL16V10-RC GRM21BR71H474KA88L 140-XRL35V10-RC circuit diagram of 13.56MHz RF Generator schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


    Original     		PDF SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA

    KST4126

    Abstract: marking E3
    Text: KST4126 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST4126 OT-23 -10HA, -50mA, 100MHz -100mA, 300//s, 00251ED KST4126 marking E3

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BB 914 S ilico n V ariab le C a p a c ita n c e D iode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity of C-V curve


    OCR Scan     		PDF Q62702-B673 OT-23 flS35b05

    Marking KJo SOT23

    Abstract: 564 transistor MMBTA43 transistor 564 marking 564 sot23-6
    Text: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 14E D | 7=11,4142 00072^4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MMBTA43 OT-23 100hA 100hA, MMBTA43_ Marking KJo SOT23 564 transistor transistor 564 marking 564 sot23-6

    Ferranti Semiconductors

    Abstract: ferranti ZC830 ZC831 ZC832 ZC833 ZC834 ZC835 ZC836
    Text: SOT-23 T A B LE 7 - S IL IC O N ION IM PLA N TED H Y P E R A B R U P T TU N E R D IO D ES Designed fo r use in H F, V H F , U H F e le ctro n ic tu n in g a p p lica tio n s w here large cap a cita n ce variatio n s and high Q are required. H igh Q w ith a guaranteed m inim um value.


    OCR Scan     		PDF OT-23 C2/C20 ZC830 ZC831 ZC832 ZC833 ZC834 ZC835 FSD1001. FSD1001 Ferranti Semiconductors ferranti ZC836

    transistor A 564

    Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1823L5 KST1623L6 KST1623L7 KST1623L3 KST1623L4 KST1623L5 transistor A 564 L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 m E D ^7=^4142 Q0G?aci 4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MMBTA43 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Die no. A-32 PNP small signal transistor Features Dimensions Units : mm available in an SST3 (SST, SOT-23) package, see page 300 SST3 collector-to-emitter breakdown voltage, BVCEO = 40 V (min) at lc = 1.0 mA 0 .4 5 ± 0 .1 excellent gain linearity from 100 (iA to


    OCR Scan     		PDF OT-23) SST6839 BC857B BC858B