Untitled
Abstract: No abstract text available
Text: User's Guide SLVU464 – July 2011 UCD90SEQ48EVM-560: 48-Pin Sequencer Development Board This user's guide describes the 48-pin Sequencer Development Board – UCD90SEQ48EVM-560. This development board contains a 48-pin socket and interface circuitry to support the UCD9090.
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SLVU464
UCD90SEQ48EVM-560:
48-Pin
UCD90SEQ48EVM-560.
UCD9090.
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Hall TLE 4905
Abstract: EW-460 hall sot223 asahi EW-410 tle4905 TLE4905G EW-400 EW-450 EW-510
Text: Cross reference list Hall IC switches Asahi Part No. Asahi Type Package EW 400 EW 410 EW 450 EW 460 EW 500 EW 510 EW 550 EW 560 Latch Latch Switch Switch Latch Latch Switch Switch SOT223 like SOT223 like SOT223 like SOT223 like P-SSO-3 like P-SSO-3 like P-SSO-3 like
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OT223
Hall TLE 4905
EW-460
hall sot223
asahi
EW-410
tle4905
TLE4905G
EW-400
EW-450
EW-510
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IND1812
Abstract: RB 34 schottky diode BAT 9V FEMALE R36 SOT223 HDR connector 1x5 DIODE P1 sod123 diode R42 SOT223 13 560 rj45 female
Text: 5 4 3 2 C1 TP1 SMP_VCC 0402 VCC 1 560 P1[0]b P1[1]b C8 10 uFd 25v 5V 1 2 3 0 OHM Place test points near edge of board. Vin Vin TP2 1 VIN TP5 1 5V 5V NOTE: 1 VIN TP6 TP7 1 5V GND 5V DEFAULT JUMPER PIN 2 TO 3 D P1[5]b VCC 0 OHM TP3 HEADER 3 1206 2 56 Vdd 0402
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D-12V
OD123
REF-14345
IND1812
RB 34 schottky diode
BAT 9V FEMALE
R36 SOT223
HDR connector 1x5
DIODE P1
sod123 diode
R42 SOT223
13 560
rj45 female
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LM1117MPX-5.0 SOT-223
Abstract: R36 SOT223 0402 resistors HDR jumper led 0805 SOT R23 BAT 9V FEMALE HDR1X5 0402 resistor 1% 13 560
Text: 5 4 3 2 1 Vadj TP1 VCC TP11 GND Do Not Populate J1 VCC C1 5V 1 2 3 1 2 3 Place test points near edge of board. TP3 0.1 uFd NOTE: TP2 1 VIN TP5 1 5V Vin HEADER 3 0402 Vin VIN 1 5V DEFAULT JUMPER PIN 2 TO 3 5V 27 Vdd XRES 2 P1[0] 300 2 P1[1] P1[2] 300 P1[3]
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V-12V
OD123
REF-14344
LM1117MPX-5.0 SOT-223
R36 SOT223
0402 resistors
HDR jumper
led 0805
SOT R23
BAT 9V FEMALE
HDR1X5
0402 resistor 1%
13 560
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D2PAK1
Abstract: No abstract text available
Text: Cherry Semiconductor offers a wide variety of traditional packages in addition to more advanced package technology. Flip Chip is an example of the advanced packaging technologies offered by Cherry Semiconductor. An application note included in this section explains the Flip Chip manufacturing process and the methods available for Flip Chip assembly.
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MS-026
MO-108
D2PAK1
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CS16
Abstract: ctn 4.7 RM-1 datasheet ITO-220 CD16 CS14 CS28 cx sot-353 DFN33 SOT-26 ci
Text: Packing of IC & MOSFET TUBE PACK Outline Code Outline Packing Code Static electricity bag 靜電袋 Box (PCS) Box # Box Size (mm) CTN # CTN (PCS) CTN Size (mm) G.W. (kgs) N.W. (kgs) CZ TO-220 (50pcs/tube) C0 1,000 2,000 VENDOR 600*166*96 VENDOR 8,000 630*355*233
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O-220
50pcs/tube)
O-220-5L
ITO-220-4L
ITO-220
O-251
75pcs/tube)
CS16
ctn 4.7
RM-1 datasheet
ITO-220
CD16
CS14
CS28
cx sot-353
DFN33
SOT-26 ci
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Untitled
Abstract: No abstract text available
Text: TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -560V BVCEO -560V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages High Breakdown Voltage Part No.
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TSA1765
OT-223
-560V
-150mA
TSA1765CW
-50mA
-10mA
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BSP125
Abstract: L6327 JESD22-A114-HBM
Text: Rev. 2.1 BSP125 SIPMOS Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 600 V 45 Ω 0.12 A PG-SOT223 • Pb-free lead plating; RoHS compliant x Qualified according to AEC Q101 RoHS compliant Tape and Reel Information Marking Packaging
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BSP125
PG-SOT223
BSP125
L6433:
PG-SOT223
L6327:
L6327
JESD22-A114-HBM
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IS-012A
Abstract: bsp125 2700us
Text: Rev. 2.2 BSP125 SIPMOS Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 600 V 45 Ω 0.12 A PG-SOT223 • Pb-free lead plating; RoHS compliant x Qualified according to AEC Q101 • Halogenfree according to IEC61249221
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BSP125
PG-SOT223
IEC61249221
BSP125
H6433:
PG-SOT223
H6327:
IS-012A
2700us
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2SD882P
Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200
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SC-62
2SD882P
ch3904
marking J1 sot-23
T05 sot-23
sot-23 marking NE
MARKING J3 SOT-23
marking NB SOT-23
CHT846BWPTR
LT 723 ic
marking J2 sot-23
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"Signal Line Filter"
Abstract: electrical based microcontroller projects 78M05 sot223 EMC for PCB Layout MC908AP64 1n4733 smd MC68HC9S08AW60 AN2764 Signal Line Filters a1972
Text: Freescale Semiconductor Application Note AN2764 Rev. 0, 06/2005 Improving the Transient Immunity Performance of Microcontroller-Based Applications by: Ross Carlton, Greg Racino, John Suchyta Freescale Semiconductor, Inc. Introduction Increased competition among appliance manufacturers, as well as market regulatory pressures, are
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AN2764
"Signal Line Filter"
electrical based microcontroller projects
78M05 sot223
EMC for PCB Layout
MC908AP64
1n4733 smd
MC68HC9S08AW60
AN2764
Signal Line Filters
a1972
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12v and 5v regulated power supply circuit diagram
Abstract: VJ0805Y104JXA schematic power supply circuit diagram using ic POWER MOSFET CIRCUIT LMV321M5 1N5819M 929834-02-36-ND 20a power supply AN820 LMV321
Text: SiDB766761 Vishay Siliconix Temperature Sensing MOSFET Evaluation Board FEATURES Turns Off MOSFET Before TJ Exceeds 175_C Rating 5-V Logic Level Operation of Control Circuit 12-V Battery Level Operation of Power MOSFET Circuit Sense Diode Bias Current, IF = 250 mA
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SiDB766761
SUB60N04-15LT,
SUB60N04-15LT
LM2937IMP-5
OT-223
LMV321M5,
SC70-5
929834-02-36-ND
12v and 5v regulated power supply circuit diagram
VJ0805Y104JXA
schematic power supply circuit diagram using ic
POWER MOSFET CIRCUIT
LMV321M5
1N5819M
929834-02-36-ND
20a power supply
AN820
LMV321
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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667 transistor ecb
Abstract: SOT-23 EBC SCR TRANSISTOR scr 209
Text: Mechanical Drawings 201 Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 037(0.94] 043(1.09) 1.0(25.4) M I N I MUM .330(8.38] .350(8.89) T 13 0 ( 3 . 3 0 ) 145(3.68) 1.0(25.4) M I N I MUM Case B-M Case A 4 125(3. .560(14 22 ) •600(15 24)
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O-220
O-220AC
O-237
O-247
667 transistor ecb
SOT-23 EBC
SCR TRANSISTOR
scr 209
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Untitled
Abstract: No abstract text available
Text: SOT223 PIMP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 - NOVEMBER 1998 FEATURES * 500 V o lt V,CEO 150m A c o n tin u o u s c u rre n t Ptot = 2 W a tt PARTM ARKING D E T A IL - FZT560 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL C o lle c to r-B a s e V o lta g e
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OCR Scan
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OT223
FZT560
-100m
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PDF
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tm1101
Abstract: Diode schottky eb PZTM1101 PZTM1102
Text: Product specification Philips Semiconductors PZTM1101 NPN transistor/Schottky-diode module FEATURES DESCRIPTION • Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102.
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OCR Scan
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PZTM1101
OT223
PZTM1102.
TM1101.
OT223)
OT223.
7110flEb
tm1101
Diode schottky eb
PZTM1101
PZTM1102
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BFG35
Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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BFG35
OT223
OT223.
MSA035
TRANSISTOR FQ
BFG35 amplifier
BHS111
npn 2222 transistor
TRANSISTOR NPN c4 nf
C2570
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TM1102
Abstract: S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF
Text: Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 FEATURES DESCRIPTION • Low output capacitance Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. • Fast switching time
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OCR Scan
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PZTM1102
OT223
PZTM1101.
711QfiSb
G1G3173
OT223.
7110fiEb
TM1102
S1U MARKING
TF 745-A
SOT223 MARKING L5
l5 transistor PNP
transistor PNP L5
PZTM1101
PZTM1102
lf marking transistor
transistor marking LF
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BFG35 amplifier
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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OCR Scan
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OT223
I3FG55.
BFG35
OT223.
MBB364
BFG35 amplifier
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PDF
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Untitled
Abstract: No abstract text available
Text: SUPPLY VOLTAGE MONITOR ISSUE 2 - NOVEMBER 1995 DEVICE DESCRIPTION FEATURES T h e Z S M 5 6 0 is a th re e te rm in a l und er v o lt a g e m o n it o r c ir c u it fo r use in m ic ro p ro c es s o r system s. T he thresh old voltage of the device has been set to 4.6 volts
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OCR Scan
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ZSM560
OT223
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npn 2222 transistor
Abstract: BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851
Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.
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OCR Scan
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BFG198
OT223
7110fl2b
MSA035
OT223.
npn 2222 transistor
BFG198
MS80
din 45325
2222 TRANSISTOR NPN
Philips 2222 114 capacitor
2222 851
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PDF
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ZXMH6A07T8
Abstract: ZXMP6A17DN8
Text: 60 Volt MOSFETs A series o f m id -vo ltage M O SFETs containing sm all signal products fo r lo w current sw itching applications and trench M OSFETs. The trench M O SFETs enable much h igher current handling capability in the packages on offer. Typical applications include:-
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OCR Scan
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ZXMC6A09DN8
ZXMC4559DN8
ZXMH6A07T8
ZXMH6A07T8
ZXMP6A17DN8
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PDF
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Philips 2222 050 capacitor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated
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OCR Scan
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BFG135
OT223
MSB002
OT223.
711062b
110fi2b
711Da2b
Philips 2222 050 capacitor
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PDF
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BFG135 power amplifier for 900Mhz
Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated
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OCR Scan
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BFG135
OT223
711Qfl2ti
7110fl2b
BFG135
BFG135 power amplifier for 900Mhz
BFG135 amplifier
BFG135 A amplifier
BFG135 TRANSISTOR
MBB300
BFG135 - BFG135
microstripline
npn 2222 transistor
power amplifier specifications at 900Mhz
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