04N50C3
Abstract: SPD04N50C3
Text: SPD04N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPD04N50C3
P-TO252-3-1
Q67040-S4574
04N50C3
04N50C3
SPD04N50C3
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02N50C3
Abstract: 02N50 02N5 SPD02N50C3 Q67040-S4570
Text: SPD02N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPD02N50C3
P-TO252-3-1
Q67040-S4570
02N50C3
02N50C3
02N50
02N5
SPD02N50C3
Q67040-S4570
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smd diode marking UJ 76a
Abstract: 08N50C3 TRANSISTOR SMD MARKING CODE 5c 08n50 SMD TRANSISTOR MARKING 4c d marking code dpak transistor PG-TO252-3-11 SPD08N50C3 V2608 TRANSISTOR SMD MARKING CODE 76a
Text: SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated
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SPD08N50C3
O-252
PG-TO252
Q67040-S4569
08N50C3
PG-TO252-3-1,
smd diode marking UJ 76a
08N50C3
TRANSISTOR SMD MARKING CODE 5c
08n50
SMD TRANSISTOR MARKING 4c
d marking code dpak transistor
PG-TO252-3-11
SPD08N50C3
V2608
TRANSISTOR SMD MARKING CODE 76a
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08n50c3
Abstract: No abstract text available
Text: SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated
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SPD08N50C3
O-252
PG-TO252
Q67040-S4569
08N50C3
PG-TO252-3-1,
08n50c3
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03n50c3
Abstract: 03n50c SPD03N50C3 03N50 200VW
Text: SPD03N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPD03N50C3
P-TO252-3-1
Q67040-S4571
03N50C3
03n50c3
03n50c
SPD03N50C3
03N50
200VW
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08n50
Abstract: 08n50c3
Text: SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated
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SPD08N50C3
O-252
PG-TO252
SPD08N50C3
Q67040-S4569
08N50C3
08n50
08n50c3
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03n50c3
Abstract: SPD03N50C3 03n50c
Text: SPD03N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
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SPD03N50C3
P-TO252-3-1
Q67040-S4571
03N50C3
03n50c3
SPD03N50C3
03n50c
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02N50C3
Abstract: 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490
Text: SPD02N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
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SPD02N50C3
P-TO252-3-1
Q67040-S4570
02N50C3
02N50C3
02N5
Q67040-S4570
SPD02N50C3
TRANSISTOR SMD MARKING CODE 490
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04n50c3
Abstract: SPD04N50C3 Q67040-S4574 04N50
Text: SPD04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
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SPD04N50C3
P-TO252-3-1
Q67040-S4574
04N50C3
04n50c3
SPD04N50C3
Q67040-S4574
04N50
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08n50
Abstract: SPD08N50C3
Text: SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252-3-1 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated
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SPD08N50C3
O-252
PG-TO252-3-1
SPD08N50C3
08N50C3
PG-TO252-3-1
Q67040-S4569
08n50
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08N50C3
Abstract: SPD08N50C3
Text: SPD08N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated
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SPD08N50C3
O-252
P-TO252-3-1
Q67040-S4569
08N50C3
08N50C3
SPD08N50C3
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dpak code
Abstract: marking CODE MX CJD86 MJD86 MJD86R MJD86S transistor marking mx marking code XY
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CJD86 DPAK TO-252 Plastic Package For High Speed Switching Application ABSOLUTE MAXIMUM RATINGS (Tc=25ºC ) DESCRIPTION SYMBOL VCBO Collector Base Voltage
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CJD86
O-252)
250mm
C-120
CJD86Rev100605E
dpak code
marking CODE MX
CJD86
MJD86
MJD86R
MJD86S
transistor marking mx
marking code XY
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CJD86 DPAK TO-252 Plastic Package For High Speed Switching Application ABSOLUTE MAXIMUM RATINGS (Tc=25ºC ) DESCRIPTION SYMBOL VCBO Collector Base Voltage
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CJD86
O-252)
250mm
C-120
CJD86Rev100605E
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PDTC
Abstract: CSB1182 MJD112 MJD117 MJD13003 MJD148 MJD31 MJD31C CSA1834 MJD350
Text: Continental Device India Limited CDIL C-120 Naraina Industrial Area, New Delhi - 110 028, India. Phone : (+91-11) 2579 6150* Fax : (91-11) 25795290, 51411119 E-mail : email@cdil.com Website: www.cdilsemi.com TO-252 (DPAK) PACKAGE DEVICES Maximum Ratings
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C-120
O-252
MJD340
MJD47
MJD50
MJD13003
CSD2118
2SB1184)
2SD1760)
PDTC
CSB1182
MJD112
MJD117
MJD13003
MJD148
MJD31
MJD31C
CSA1834
MJD350
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d2nk7
Abstract: d2nk marking v2 MOROCCO DPAK
Text: STD2NK70Z - STD2NK70Z-1 N-CHANNEL 700 V - 6 Ω - 1.6 A DPAK/IPAK Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STD2NK70Z STD2NK70Z-1 700 V 700 V 7.2 Ω 7.2 Ω 1.6 A 1.6 A 45 W 45 W • ■ ■ ■
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STD2NK70Z
STD2NK70Z-1
d2nk7
d2nk
marking v2
MOROCCO DPAK
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d2nk7
Abstract: STD2NK70Z STD2NK70Z-1 STD2NK70ZT4
Text: STD2NK70Z - STD2NK70Z-1 N-CHANNEL 700 V - 6 Ω - 1.6 A DPAK/IPAK Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STD2NK70Z STD2NK70Z-1 700 V 700 V 7Ω 7Ω 1.6 A 1.6 A 45 W 45 W • ■ ■ ■ ■
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STD2NK70Z
STD2NK70Z-1
STD2NK70Z
d2nk7
STD2NK70Z-1
STD2NK70ZT4
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CJD83
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON POWER TRANSISTOR CJD83 DPAK TO-252 Plastic Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC ) DESCRIPTION SYMBOL VCBO Collector Base Voltage VALUE 60 UNITS V Collector Emitter Voltage
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CJD83
O-252)
C-120
CJD83Rev111004E
CJD83
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TSD1760
Abstract: transistor a09 4 npn transistor ic AS 205 transistor TO252 transistor 18BSC TSB1184CP TSD1760CP
Text: TSD1760 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 50V IC 3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP
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TSD1760
O-252
200mA
TSB1184CP
TSD1760CP
TSD1760
transistor a09
4 npn transistor ic
AS 205 transistor
TO252
transistor
18BSC
TSB1184CP
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transistor A08
Abstract: A08 transistor TO252 18BSC TSB1184A TSB1184ACP
Text: TSB1184A Low Vcesat PNP Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -50V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics
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TSB1184A
O-252
-100mA
TSB1184ACP
transistor A08
A08 transistor
TO252
18BSC
TSB1184A
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TSB1184
Abstract: TO252 18BSC TSB1184CP pnp transistor d 640 transistor B 540
Text: TSB1184 Low Vcesat PNP Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics
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TSB1184
O-252
-100mA
TSB1184CP
TSB1184
TO252
18BSC
pnp transistor d 640
transistor B 540
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18BSC
Abstract: TSB1412 TSD2118 TSD2118CP
Text: TSD2118 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 20V IC 5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.35 @ IC / IB = 4A / 100mA (Typ.) Complementary part with TSB1412
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TSD2118
O-252
100mA
TSB1412
TSD2118CP
18BSC
TSB1412
TSD2118
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Untitled
Abstract: No abstract text available
Text: TSB1184 Low Vcesat PNP Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -50V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics
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TSB1184
O-252
-100mA
TSB1184CP
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Untitled
Abstract: No abstract text available
Text: TSD1760 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 50V IC 3A VCE(SAT) Features Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP
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TSD1760
O-252
200mA
TSB1184CP
TSD1760CP
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B1182
Abstract: B 1182 b1184 D1664
Text: T r T r a n s sto rs ★ Package m ounted on ceram ic 14 x 18 x 0.7m m • MPT SOT-89 , CPT (DPAK) Types Ty pe . (A) 32 -1 2* MPT (A) CPT 2 S B 1132 — — 2 S B 1184 -5 0 3 — 15 2 S B 1188 2 S B 1182 -32 2 2* 10 2 S B 1189 — 80 2 S B 1260 2SB1181
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OT-89)
2SB1181
RXT2907A
RXT3906
BCX53
RXT2222A
RXT3904
BCX56
RXT-A64
B1182
B 1182
b1184
D1664
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