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    55CX Search Results

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    55CX Price and Stock

    Infineon Technologies AG TLE4955CXAMA1

    MAG SWITCH SPEC PURP SSO-2-53
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    DigiKey TLE4955CXAMA1 Cut Tape 1,493 1
    • 1 $2.11
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    • 100 $1.5486
    • 1000 $1.41732
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    TLE4955CXAMA1 Ammo Pack 1,500
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    Avnet Americas TLE4955CXAMA1 Ammo Pack 18 Weeks 1,500
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    Mouser Electronics TLE4955CXAMA1 292
    • 1 $1.86
    • 10 $1.76
    • 100 $1.5
    • 1000 $1.36
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    Newark TLE4955CXAMA1 Bulk 985 1
    • 1 $2.19
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    • 100 $1.61
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    EBV Elektronik TLE4955CXAMA1 19 Weeks 1,500
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    Nexperia IP4855CX25Z

    IC INTFACE SPECIALIZED 25WLCSP
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    Nexperia IP4855CX25-CAZ

    IC INTFACE SPECIALIZED 25WLCSP
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    Rochester Electronics LLC IP4855CX25-P,135

    IP4855CX25 - INTERFACE CIRCUIT
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    DigiKey IP4855CX25-P,135 Bulk 523
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    NXP Semiconductors IP4855CX25-P,135

    IC INTERFACE SPECIALIZED 25WLCSP
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    55CX Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MDS70

    Abstract: 1030MHz-1090MHz 1030mhz
    Text: MDS70 70 Watts, 50 Volts, Pulsed Avionics 1030 - 1090MHz GENERAL DESCRIPTION CASE OUTLINE 55CX, STYLE 1 The MDS70 is a COMMON BASE bipolar transistor. It is designed for MODE S pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor


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    MDS70 1090MHz MDS70 25oC2 1030MHz-1090MHz 1030mhz PDF

    Untitled

    Abstract: No abstract text available
    Text: MDS70 70 Watts, 50 Volts, Pulsed Avionics 1030 - 1090MHz GENERAL DESCRIPTION CASE OUTLINE 55CX, STYLE 1 The MDS70 is a COMMON BASE bipolar transistor. It is designed for MODE S pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor


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    MDS70 1090MHz MDS70 25oC2 150oC 200osite PDF

    Untitled

    Abstract: No abstract text available
    Text: DME 375 Q |,jj TECHNOLOGY 375 Watts, 5 0 V olts, Pulsed A vionics 1025-1150 M H z «FMio>owAvt siliconPowe»T»*H»iîToiii GENERAL DESCRIPTION CASE OUTLINE 55CX, STYLE 1 The DME 375 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MDS70 70 Watts, 50 Volts, Pulsed Avionics 1030 - 1090MHz GENERAL DESCRIPTION CASE OUTLINE 55CX, STYLE 1 The MDS70 is a COMMON BASE bipolar transistor. It is designed for MODE S pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor


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    MDS70 1090MHz MDS70 25oC2 1030MHz PDF

    BZX55C 18 EQUIVALENT

    Abstract: BZX55C 27 equivalent LITE-ON 18 pin BZX55C BZX55C 10 equivalent BZX55C 9V1 1 diode zener 3v6 dip
    Text: BZX55C2V0 THRU BZX55C75 REVERSE VOLTAGE – 2.0 to 75 Volts POWER DISSIPATION – 0.5 Watts DO-35 Hermetically Sealed Glass Zener Voltage Regulators FEATURES • Zener Voltage Range 2.0 to 75 Volts • DO-35 Package JEDEC • Through-Hole Device Type Mounting


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    BZX55C2V0 BZX55C75 DO-35 DO-35 BZX55C 18 EQUIVALENT BZX55C 27 equivalent LITE-ON 18 pin BZX55C BZX55C 10 equivalent BZX55C 9V1 1 diode zener 3v6 dip PDF

    Untitled

    Abstract: No abstract text available
    Text: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The


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    25oC2 PDF

    j329

    Abstract: J3-29 duroid 5880 20AWG TPR400A J251
    Text: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The TPR400A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low


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    TPR400A TPR400A 25oC2 150oC 200oC 20AWG, 10mils j329 J3-29 duroid 5880 20AWG J251 PDF

    10AM11

    Abstract: 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047
    Text: 10AM11 11 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM11 is a COMMON EMITTER transistor capable of providing 11 Watts of Class A, RF output power to1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


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    10AM11 10AM11 to1000 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047 PDF

    TRANSISTOR Z4

    Abstract: Z227 transistor Z2 443l transistor z5 0912 Transistor z1 Z1 Transistor transistor DF 50 BVces
    Text: 0912-45 45 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-45 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes


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    25oC2 100mil) 68mfd, TRANSISTOR Z4 Z227 transistor Z2 443l transistor z5 0912 Transistor z1 Z1 Transistor transistor DF 50 BVces PDF

    55C68

    Abstract: BZX55C15RL
    Text: Licensed b y ON S e m i c o n d u c t o r , a tradem ark of Sem iconductor Com ponents Industries, LLC f o r Zener Te c h n olo gy a n d Products. « in c 5VM 5EM I SE M IC O NDU CTO R 5 0 0 m W D O -35 H erm etically Sealed Glass Zener Voltage Regulators


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    BZX55C2V4 55C68 BZX55C15RL PDF

    ic 74682

    Abstract: 160852 085016 74682 8813 40507 10AM05 44050-7 172113 E+170968
    Text: 10AM05 5.0 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM05 is a COMMON EMITTER transistor capable of providing 5 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


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    10AM05 10AM05 ic 74682 160852 085016 74682 8813 40507 44050-7 172113 E+170968 PDF

    DME 40

    Abstract: No abstract text available
    Text: DME 375 375 Watts, 50 Volts, Pulsed Avionics 1025-1150 MHz GENERAL DESCRIPTION The DME 375 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The


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    25oC2 DME 40 PDF

    55c12 zener diode

    Abstract: 55c15 zener diode 55c12 diode 55C15 Diode 55C2V4 55C4V3 55C6V2 55C3V0 55c3v9
    Text: TAK CHEONG 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Note 1 Rating Symbol Value Unit Maximum Steady State Power Dissipation @ TL ≤75°C, Lead Length = 3/8” PD 500 mW 4.0 mW/°C -65 to +200 °C Derate Above 75°C


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    DO-35 DO-204AH) BZX55C2V4 BZX55C91 55c12 zener diode 55c15 zener diode 55c12 diode 55C15 Diode 55C2V4 55C4V3 55C6V2 55C3V0 55c3v9 PDF

    J329 transistor

    Abstract: 20AWG TPR400A j302
    Text: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The 60198 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low thermal


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    TPR400A 25oC2 150oC 200oC 20AWG, 10mils J329 transistor 20AWG TPR400A j302 PDF

    tpr-175

    Abstract: C-388
    Text: TPR 175 175 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 175 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The


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    25oC2 tpr-175 C-388 PDF

    55C4V3

    Abstract: 55C5V1
    Text: BZX55C2V4RL Series 500 mW DO−35 Hermetically Sealed Glass Zener Voltage Regulators This is a complete series of 500 mW Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial−lead


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    BZX55C2V4RL DO-35 DO-204AH DO-35) DO-204AA BZX55C2V4RL/D 55C4V3 55C5V1 PDF

    TPR500

    Abstract: No abstract text available
    Text: TPR 500 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The


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    25oC2 TPR500 TPR500 PDF

    z3 transistor

    Abstract: TRANSISTOR Z4 Z1 Transistor transistor z5 Transistor z1 transistor z3
    Text: 0912-25 25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-25 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes


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    25oC2 100mil) z3 transistor TRANSISTOR Z4 Z1 Transistor transistor z5 Transistor z1 transistor z3 PDF

    1920AB25

    Abstract: No abstract text available
    Text: 1920AB25 25 Watts, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB25 is a COMMON EMITTER transistor capable of providing 25 Watts of Class AB, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS


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    1920AB25 1920AB25 PDF

    TPR400

    Abstract: max7540
    Text: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The


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    25oC2 TPR400 TPR400 max7540 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0912-7 7 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-7 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low thermal resistance


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    25oC2 PDF

    C-388

    Abstract: No abstract text available
    Text: TPR 175 175 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 175 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The


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    25oC2 C-388 PDF

    transistor z5

    Abstract: 027w TRANSISTOR Z4 Transistor z1 10KW
    Text: 0912-7 7 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-7 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low thermal resistance


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    25oC2 12mfd, transistor z5 027w TRANSISTOR Z4 Transistor z1 10KW PDF

    Untitled

    Abstract: No abstract text available
    Text: Dnc. J.£.ii£,u TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TPR175 175 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The TPR 175 is a high power COMMON BASE bipolar transistor. It is


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    TPR175 1090MHz PDF