Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode Arrays CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 -Low forward voltage drop. -Fast switching. -Ultra-small surface mount package. -PN junction guard ring for transient and ESD
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Original
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CDBV6-54T/AD/CD/SD/BR-G
OT-363
OT-363,
MIL-STD-202,
QW-BA015
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PDF
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smd diode marking c1
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode Arrays CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 -Low forward voltage drop. -Fast switching. -Ultra-small surface mount package. -PN junction guard ring for transient and ESD
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Original
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CDBV6-54T/AD/CD/SD/BR-G
OT-363
OT-363,
MIL-STD-202,
QW-BA015
smd diode marking c1
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PDF
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K1495
Abstract: 2N3904 749 tny380pn EF25 transformer NC-2H EF25 flyback TRANSFORMER tny380 1N4007 Diode SR1100 FR107
Text: DI-181 Design Idea TinySwitch-PK Multiple Output Power Supply With Peak Power Capability Application Device Power Output Input Voltage Output Voltage Topology Air Conditioner TNY380PN 17.7 W, 29.7 W peak 90 – 265 VAC 5 V, 12 V, 16 V Flyback Design Highlights
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Original
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DI-181
TNY380PN
2008/ENERGY
CISPR-22/EN55022B
DI-181
K1495
2N3904 749
tny380pn
EF25 transformer
NC-2H
EF25 flyback TRANSFORMER
tny380
1N4007
Diode SR1100
FR107
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PDF
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vr1 p6ke200
Abstract: TNY380PN EF25 flyback TRANSFORMER Ef25 core bobbin 2N3904 032 c1171
Text: DI-181 Design Idea TinySwitch-PK Multiple Output Power Supply With Peak Power Capability Application Device Power Output Input Voltage Output Voltage Topology Air Conditioner TNY380PN 17.7 W, 29.7 W peak 90 – 265 VAC 5 V, 12 V, 16 V Flyback Design Highlights
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Original
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DI-181
TNY380PN
2008/ENERGY
CISPR-22/EN55022B
DI-181
PI-4992-012408
vr1 p6ke200
TNY380PN
EF25 flyback TRANSFORMER
Ef25 core bobbin
2N3904 032
c1171
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PDF
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BUK543
Abstract: BUK543-60A BUK543-60B TTA10
Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack
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OCR Scan
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BUK543-60A/B
-SOT186
BUK543
DS10NÃ
BUK543-60A
BUK543-60B
TTA10
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PDF
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H3T relay
Abstract: No abstract text available
Text: • 430E571 0[ 54t.4D h3T m HAS 2 HARRIS RFP5P12/5P15 P-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Packages Features • TO-204AA -5A , -12 0 V and -1S0V BOTTOM VIEW • rDS(on) = DRAIN ^ (F L A N G E ) SOURCE • SOA is P ow er-D issipation Lim ited
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OCR Scan
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430E571
RFP5P12/5P15
O-204AA
O-204AA
RFP5P12,
RFP5P15
3649I
AN-7260.
H3T relay
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PDF
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diode smd marking SD
Abstract: SMD kl7 QW-BA015 smd schottky diode sot363 marking KLB smd marking rl SMD PI SMD 24 oe G marking CDBV6-54AD-G
Text: c o A tc m r SMD Schottky Barrier Diode Arrays S M D D io d e s S p e c ia lis t CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 - L o w f o r w a r d v o l t a g e d ro p. -Fast switching. -Ultra-small surface mount package.
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OCR Scan
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CDBV6-54T/AD/CD/SD/BR-G
OT-363,
MIL-STD-202,
OT-363
QW-BA015
CDBV6-54T/AD/CD/SD/BR-G)
ta-75Â
ta-25Â
ta--40Â
QW-BA015
diode smd marking SD
SMD kl7
smd schottky diode sot363
marking KLB
smd marking rl
SMD PI
SMD 24 oe
G marking
CDBV6-54AD-G
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PDF
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Untitled
Abstract: No abstract text available
Text: • ZENER DIODE CHIPS CD6485 • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE thru » COMPATIBLE WITH ALL WIRE BONDING DIE ATTACH TECHNIQUES CD6491 • 1.5 WATT CAPABILITY WITH PROPER HEAT SINKING MAXIMUM RATINGS Operating Temperature: -65°C to +175°C
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OCR Scan
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CD6485
CD6491
200mA
CD6486
CD6487
CD6485
00D075ki
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar high-speed switching series diode pair Marking BAV99 = A 7 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3 .0 _ 2.8 0.14 0.48 0.38 Pin configuration 1 = ANODE 2 = CATHODE 3 = CATHODE/ANODE 3 2.6 2.4
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OCR Scan
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BAV99
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PDF
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Untitled
Abstract: No abstract text available
Text: d/fwru HfcU LASEH UlUUfc DL-3039-051 : • The DL3039 Series is a line of index guided AlGalnP laser diodes. The low threshold current and short wavelength are achieved by the use of a strained multiple quantum well active layer. The DL3039 Series is suitable for applications such as bar-code scanners, laser
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OCR Scan
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DL-3039-051
DL3039
670nm
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PDF
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BYT12-400
Abstract: byt12 Scans-00144720
Text: r i T ^ 7# S G S -T H O M S O N [M g [R ](ô [iL lC T (s « S B Y T 1 2 -2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SW ITCHING LOSSES ■ LOW NOISE TURN-OFF SW ITCHING SUITABLE A PPLICATIO N S : ■ FREE WHEELING DIODE IN CONVERTERS
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OCR Scan
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712T237
Q0b0214
BYT12-400
byt12
Scans-00144720
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PDF
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S0068
Abstract: BAT81 BAT82 BAT83
Text: Product specification Philips Semiconductors Schottky barrier diodes BAT81 ; BAT82; BAT83 FEATURES D ES C R IPTIO N • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68
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OCR Scan
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BAT81
BAT82;
BAT83
DO-34)
S0068
BAT81
BAT82
BAT83
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ^•7#. HD gœilLiOT iD(gi ESM 765-100 800 FAST RECOVERY RECTIFIER DIODES ■ HIGH VOLTAGE CAPABILITY ■ FAST AND SOFT RECOVERY ■ THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND I rm AT 100 °C UNDER USERS CONDITION APPLICATIONS
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OCR Scan
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7TSR237
DDb7G27
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PDF
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gi diode
Abstract: NDL5302L1 NDL5302L2 Edge-Emitting Diode TO18 package LED 1300 nm NDL5310
Text: N E C b5E » ELECTRONI CS I NC • b4275E5 0QBÖ15Q 7 77 M N E C E DATA SHEET LIGHT EMITTING DIODE NEC ELECTRON DEVICE N D L5302L1 1 300 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP LIGHT EM ITTING DIODE DESCRIPTION NDL5302L1 is an InGaAsP double heterostructure 1 300 nm LED. It is designed for medium distance optical fiber communi
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OCR Scan
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b427525
NDL5302L1
NDL5302L1
GI-50/125
NDL5302L2
20/iW
to-18
ndl5300
ndls302
ndl5310
gi diode
Edge-Emitting Diode
TO18 package LED 1300 nm
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PDF
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TO18 package LED 1300 nm
Abstract: No abstract text available
Text: N E C b5E D ELECTRONICS INC • b427525 G03Ö150 777 » N E C E DATA SHEET NEC LIGHT EMITTING DIODE N D L5302L1 ELECTRON DEVICE 1 300 nm OPTICAL FIB ER COMMUNICATIONS InGaAsP LIGHT EMITTING DIODE DESCRIPTION NDL5302L1 is an InGaAsP double heterostructure 1 300 nm LE D . It is designed for medium distance optical fiber communi
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OCR Scan
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b427525
L5302L1
NDL5302L1
GI-50/125
NDL5302L2
DL5300
DL5302
L5302L1
DL5300P
L5302P
TO18 package LED 1300 nm
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PDF
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Untitled
Abstract: No abstract text available
Text: UGF18ACT THRU UGF18DCT Voltage - ULTRAFAST RECTIFIER 50 to 200 Volts Current -1 8.0 Amperes FEATURES ♦ Isolated plastic package has Underwriters Labora tories Flammability Classification 94V-0 ♦ Internal insulation resistance 1.5k V rms ♦ Ideally suited for use in very high frequency
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OCR Scan
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UGF18ACT
UGF18DCT
O-220CT
ITO-220CT
MIL-STD750,
UGF18AT
UGF18DT
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PDF
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transistor c1718
Abstract: No abstract text available
Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS 4N32 4N33 PACKAGE DIMENSIONS DESCRIPTION The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES & APPLICATIONS High isolation resistance— 101,ft
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OCR Scan
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E90700
ST1603A
74bbfiSl
C1686
C1894
C1717
C1718
C1719
74bbfl51
74bbfi51
transistor c1718
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PDF
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QBS02
Abstract: QBS025
Text: '17-25 Watt DC/DC Converters - Single Output IPD’s new OBS series o f isolated converters provides up to 25W of single output power in a 2" x 2" x 0.40" package size, with an industry standard pinout. Remote shutdown is provided, output voltages can be externally trimmed
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -9.1471A International IOR Rectifier IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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OCR Scan
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IRG4PC50UD
O-247AC
554S5
DDSfl51fl
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PDF
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Untitled
Abstract: No abstract text available
Text: 48 554 52 DDlfc,7Tß 2ÔT International 1@I]Rectifier SERIES IRK.L240 FAST RECOVERY DIODES Features I INR NEW MAGN-A-pak Power Modules INTERNATIONAL RECTIFIER b5E Fast recovery time characteristics Electrically isolated base plate Industrial standard package
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OCR Scan
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27-Thermal
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PDF
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o lo g y O D APT8075BN APT7575BN APT8090BN APT7590BN Ó S POWER MOS IVe 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Í2 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.
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OCR Scan
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APT8075BN
APT7575BN
APT8090BN
APT7590BN
8075BN
7590BN
7575BN
8090BN
Na06SÂ
/0608/SÂ
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PDF
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1RF720
Abstract: 147L2 MSSS2 9315J
Text: International ioR Rectifier 4ÔSS452 a n • INR PD-9.315J IRF720 HEXFET Power M O SFET • • • • • 0014750 INTERNATIONAL RECTIFIER bSE Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D
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OCR Scan
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SS452
IRF720
ai47b3
1RF720
147L2
MSSS2
9315J
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PDF
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GD 743 Siemens
Abstract: No abstract text available
Text: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on
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OCR Scan
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TQ-220
BUZ103AL
C67078-S1357-A2
A23SbOS
Z103AL
O-220
T05155
235b05
D0fl45flfl
GD 743 Siemens
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PDF
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CM600HA-24E
Abstract: CM600HA24E prx T 7200 modulo IGBT 600V 16 BP107 igbt modulo diode B4E
Text: b4E D m 72T4b21 00GLi7üû m 3D3 « P R X CM600HA-24E Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX INC Single IGBTMOUK g ^ Q r i G S M O C Iu IB
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OCR Scan
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72T4b21
0DGb70Ã
CM600HA-24E
BP107,
Amperes/1200
CM600HA-24E
CM600HA-2werex,
CM600HA24E
prx T 7200
modulo IGBT 600V 16
BP107
igbt modulo
diode B4E
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PDF
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