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National Semiconductor Corporation 54F219FLQB IC,SRAM,16X4,F-TTL,FP,16PIN,CERAMIC
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54F219FL Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
54F219FL		National Semiconductor	64-Bit Random Access Memory with TRI-STATEE Outputs		Original	PDF
54F219FLQB		National Semiconductor			Original	PDF

54F219FL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
54F219DLQB Abstract: 54F219 54F219FLQB 54F219LLQB F189 Text: MICROCIRCUIT DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 10/13/97 Last Major Revision Date: 07/21/97 MN54F219-X REV 2A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs	Original	MN54F219-X 64-BIT 16-word 54F219 54F219DLQB 54F219FLQB 54F219LLQB M0002060 54F219DLQB 54F219 54F219FLQB 54F219LLQB F189	PDF
Untitled Abstract: No abstract text available Text: National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are	OCR Scan	54F/74F219 64-Bit 16-word	PDF
64 CERAMIC LEADLESS CHIP CARRIER LCC Abstract: 54F219DL 54F219FL 54F219LL 74F219 74F219PC 74F219SC 74F219SJ F189 N16E Text: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are	Original	74F219 64-Bit 16-word 64 CERAMIC LEADLESS CHIP CARRIER LCC 54F219DL 54F219FL 54F219LL 74F219 74F219PC 74F219SC 74F219SJ F189 N16E	PDF
Untitled Abstract: No abstract text available Text: E M IC O N D U C T Q R r 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are	OCR Scan	74F219 64-Bit 16-word LUUJ13J 4JL5JL6JL7J18\| 16-Lead 16-Lead	PDF
FDC9268 Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):	Original		PDF
Untitled Abstract: No abstract text available Text: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are	Original	74F219 64-Bit 16-word	PDF
74F219 Abstract: 54F219DL 54F219FL 54F219LL 74F219PC 74F219SC 74F219SJ F189 N16E Text: 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are	Original	74F219 64-Bit 16-word 74F219 54F219DL 54F219FL 54F219LL 74F219PC 74F219SC 74F219SJ F189 N16E	PDF
Untitled Abstract: No abstract text available Text: 54F219,74F219 54F219 74F219 64-Bit Random Access Memory with TRI-STATE RM Outputs Literature Number: SNOS173A 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a	Original	54F219 74F219 74F219 64-Bit SNOS173A	PDF
Untitled Abstract: No abstract text available Text: 219 National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE* Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are	OCR Scan	54F/74F219 64-Bit 16-word L5D11PP Q0flE33b	PDF
Untitled Abstract: No abstract text available Text: Nationa l Semiconductor MILITARY DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 07/30/96 Last Major Revision Date: 03/29/96 MN54F219—X REV 1A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs	OCR Scan	MN54F219â 64-BIT 16-word 54F219 54F219DLQB 54F219FLQB 54F219LLQB -55/100C	PDF
Untitled Abstract: No abstract text available Text: November 1994 Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are	OCR Scan	54F/74F219 64-Bit 16-word	PDF
TSMC 0.18 um MOSfet Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221 Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes	Original	QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221	PDF