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    54 BALL VFBGA Search Results

    54 BALL VFBGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MPC860PZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860PVR80D4 Rochester Electronics LLC 32-BIT, 80MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC855TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860ENZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy

    54 BALL VFBGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT45W8MW16BGX

    Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
    Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc


    Original     		PDF 128Mb MT45W8MW16BGX 54-Ball 09005aef80ec6f79 pdf/09005aef80ec6f65 MT45W8MW16BGX MT45W8MW16BGX-701LWT 700000H-7FFFFFH

    BCR100

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc


    Original     		PDF 128Mb 09005aef80ec6f79 pdf/09005aef80ec6f65 128Mb_ BCR100

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features • • • • • Figure 1: Ball Assignment 54-Ball VFBGA Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages


    Original     		PDF MT45W4MW16BFB MT45W2MW16BFB 54-Ball 09005aef80be1fbd

    micron memory sram

    Abstract: a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor
    Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ


    Original     		PDF 128Mb MT45W8MW16BGX 54-Ball 09005aef80ec6f79 pdf/09005aef80ec6f65 128Mb_ micron memory sram a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor

    MT45W8MW16BGX

    Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
    Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ


    Original     		PDF 128Mb MT45W8MW16BGX 54-Ball 39nsH 09005aef80ec6f79 pdf/09005aef80ec6f65 128Mb_ MT45W8MW16BGX MT45W8MW16BGX-701LWT BDQ8 CSP3-20

    MT48LC16M16LF

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48LC16M16LF, MT48G16M16LF, MT48V16M16LF 4 MEG X 16 X 4 BANKS Features Figure 1: Ball Assignment Top View 54-Ball VFBGA • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can


    Original     		PDF 256Mb: 192-cycle 16M16 54-pin 09005aef80737ef7 256Mbx16 MT48LC16M16LF

    jesd 51-7

    Abstract: 63 ball Vfbga thermal resistance 56DL metcal apr 5000 MO-205 56ZQL BGA Ball Crack 054UG08C127 APR-5000
    Text: Application Report SZZA040 - December 2003 54BGA Package Frank Mortan SLL Package Development ABSTRACT The TI 54-ball low-profile, fine-pitch, ball grid array TFBGA meets dimensions specified in JEDEC MO-205, Variation DD. This 0.8-mm-pitch BGA allows economical OEM designs


    Original     		PDF SZZA040 54BGA 54-ball MO-205, 16-bit jesd 51-7 63 ball Vfbga thermal resistance 56DL metcal apr 5000 MO-205 56ZQL BGA Ball Crack 054UG08C127 APR-5000

    962n

    Abstract: No abstract text available
    Text: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns


    Original     		PDF 09005aef80ec6f63 pdf/09005aef80ec6f46 962n

    Untitled

    Abstract: No abstract text available
    Text: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ


    Original     		PDF MT45W4MW16BFB MT45W2MW16BFB 54-Ball pdf/09005aef80be2036 09005aef80be1fbd

    DEVICE MARKING CODE table

    Abstract: INFINEON transistor marking INFINEON TVS diode process marking code C5 marking code j6 sus material 304 MT45W4MW16B thd202
    Text: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAMTM 1.0 MEMORY MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ


    Original     		PDF MT45W4MW16BFB 54-Ball 09005aef80be1fbd pdf/09005aef80be2036 DEVICE MARKING CODE table INFINEON transistor marking INFINEON TVS diode process marking code C5 marking code j6 sus material 304 MT45W4MW16B thd202

    Untitled

    Abstract: No abstract text available
    Text: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns


    Original     		PDF 09005aef80be1fbd pdf/09005aef80be2036

    Micron 32MB NOR FLASH

    Abstract: 0-30v power DEVICE MARKING CODE table INFINEON transistor marking label infineon application note marking code C5 RCR Resistor active suspension sensor micron cmos sensor connection
    Text: 2 MEG x 16, 1 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY MT45W2MW16BAFB MT45W1MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Random Access Time: 70ns, 85ns


    Original     		PDF MT45W2MW16BAFB MT45W1MW16BAFB 54-Ball Ini80ec6f46 09005aef80ec6f63 pdf/09005aef80ec6f46 Micron 32MB NOR FLASH 0-30v power DEVICE MARKING CODE table INFINEON transistor marking label infineon application note marking code C5 RCR Resistor active suspension sensor micron cmos sensor connection

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H4M16LF - 1 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF 096-cycle 09005aef808a7edc

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H4M16LF - 1 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF MT48H4M16LF 54-Ball 096-cycle 09005aef80a63953, 09005aef808a7edc

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF 128Mb: 096-cycle 09005aef80c97015

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 64Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H4M16LF - 1 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF 096-cycle 09005aef808a7edc

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF 128Mb: 096-cycle 09005aef80c97015

    CYL008M162FFBU-1ABAI

    Abstract: M2A2
    Text: PRELIMINARY CYL008M162FFB 128-Mbit 8-Mbit x 16 Low-Power MoBL4 SDRAM Features — Deep Sleep Mode — Self Refresh Mode; standard and low power • Functionality • Temperature: –40°C to +85°C — Internal 4 Bank Operation • 8 mm x 8 mm x 1.0 mm 54-ball 0.8 mm FBGA Package


    Original     		PDF CYL008M162FFB 128-Mbit 54-ball CYL008M162FFB CYL008M162FFBU-1ABAI M2A2

    FX109

    Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
    Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency


    Original     		PDF MT28F644W18 MT28F644W30 56-Ball 16-bit) 09005aef8098d2b5 MT28F644W30 FX109 FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114

    FX119

    Abstract: FX117
    Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency


    Original     		PDF 16-bit) 09005aef8098d2b5 MT28F644W30 FX119 FX117

    48 ball VFBGA

    Abstract: 90 ball VFBGA LVTH162 micro pitch BGA tSSOP 56 socket TSSOP YAMAICHI SOCKET 48-PIN 56-PIN ALVCH16373 LVCH16244A
    Text: Application Report SZZA029B - May 2002 16-Bit Widebus Logic Families in 56-Ball, 0.65-mm Pitch, Very Thin Fine-Pitch BGA VFBGA Packages Frank Mortan and Mark Frimann Standard Linear & Logic ABSTRACT TI’s 56-ball MicroStar Jr. package, registered under JEDEC MO-225, has demonstrated


    Original     		PDF SZZA029B 16-Bit 56-Ball, 65-mm 56-ball MO-225, 48-pin 56-pin 48 ball VFBGA 90 ball VFBGA LVTH162 micro pitch BGA tSSOP 56 socket TSSOP YAMAICHI SOCKET ALVCH16373 LVCH16244A

    SR52

    Abstract: FY618 SR-52
    Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		PDF 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 SR52 FY618 SR-52

    FY618

    Abstract: FY617
    Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		PDF 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 FY618 FY617

    SR52 W 18

    Abstract: FX118 transistor marking A21 FY114 Fw*118 fw104 intel marking 28f intel package marking w18 marking PBA marking W18
    Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency


    Original     		PDF MT28F644W18 MT28F644W30 56-Ball 16-bit) 09005aef8098d2b5 MT28F644W30 SR52 W 18 FX118 transistor marking A21 FY114 Fw*118 fw104 intel marking 28f intel package marking w18 marking PBA marking W18