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    Untitled

    Abstract: No abstract text available
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


    Original     		PDF 512M8CN 256M16CP DDR3L-1866

    intel G31 circuit diagram

    Abstract: intel 845 circuit diagram all chip socket AM2 pinout P5 microarchitecture socket am3 pinout Thermocouple K bead type am3 socket pin diagram am3 socket pinout intel 845 SERVICE MANUAL intel p30
    Text: Intel 80312 I/O Companion Chip Datasheet Product Features • ■ ■ ■ Core Interface Unit —100 MHz Request Bus —Data Bus shared with Intel® 80200 processor and SDRAM —4-Entry Request Buffer PCI-to-PCI Bridge Unit —Primary and Secondary 66 MHz/64-bit


    Original     		PDF Hz/64-bit 64-Bit intel G31 circuit diagram intel 845 circuit diagram all chip socket AM2 pinout P5 microarchitecture socket am3 pinout Thermocouple K bead type am3 socket pin diagram am3 socket pinout intel 845 SERVICE MANUAL intel p30

    NT5CC256

    Abstract: NT5CB256M16 512M8CN NT5CC256M16
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


    Original     		PDF 512M8CN 256M16CP DDR3L-1866 NT5CC256 NT5CB256M16 NT5CC256M16

    Untitled

    Abstract: No abstract text available
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


    Original     		PDF 512M8CN 256M16CP

    K4B4G1646

    Abstract: K4B4G16
    Text: Rev. 1.0, Jul. 2013 M471B5674QH0 M471B5173QH0 M471B1G73QH0 M474B1G73QH0 204pin Unbuffered SODIMM based on 4Gb Q-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


    Original     		PDF M471B5674QH0 M471B5173QH0 M471B1G73QH0 M474B1G73QH0 204pin 78FBGA K4B4G0846Q 512Mbx8 1Gx64/x72 M471/74B1G73QH0 K4B4G1646 K4B4G16

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		PDF 256Mb: 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM

    MT48LC16M16A2TG-6A

    Abstract: MT48LC16M16A2 MICRON technical note TN-48-05 MT48LC16M16A2 rev C MT48LC16M16A2 rev D MT48LC32M8A2
    Text: 256Mb x8, x16 SDRAM Addendum Features Synchronous DRAM MT48LC32M8A2 – 8 Meg x 8 x 4 Banks MT48LC16M16A2 – 4 Meg x 16 x 4 Banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds Features Addendum Changes • • • •


    Original     		PDF 256Mb MT48LC32M8A2 MT48LC16M16A2 PC100 PC133 192-cycle 09005aef81880748, 09005aef81880777 256Mbx16SDRAM MT48LC16M16A2TG-6A MT48LC16M16A2 MICRON technical note TN-48-05 MT48LC16M16A2 rev C MT48LC16M16A2 rev D MT48LC32M8A2

    aJ-200

    Abstract: ycl pcb 452 SDC 2921 TT 2146 ph163539 D2318 LTS 543 seven segment display RGB888 to CCIR656 PIR based human motion DETECTOR CIRCUIT DIAGRAM aJ-102
    Text: Technical Reference Manual Real-time, Low Power Network, Multimedia Direct Execution Microprocessor For The JME Platform aJ-200TTMM . Trade marks aJ-200 is trademark of aJile Systems, Inc. Sun, Sun Microsystems and Java are all trademarks of Sun Microsystems in the United States and other countries. All other trademarks are the property of


    Original     		PDF aJ-200TM aJ-200 10BASE-T 100BASE-TX 10BASE-TX 200mA ycl pcb 452 SDC 2921 TT 2146 ph163539 D2318 LTS 543 seven segment display RGB888 to CCIR656 PIR based human motion DETECTOR CIRCUIT DIAGRAM aJ-102

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		PDF 256Mb: MT49H8M32 MT49H16M16 144-Ball 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM

    SCBE2

    Abstract: gc540 GC80303 273358
    Text: Intel 80303 I/O Processor •66 MHz PCI-to-PCI Bridge MHz SDRAM and Internal Bus ■Complies with PCI Local Bus Specification, Revision 2.2 ■Universal 5 V and 3.3 V PCI Signaling Environment ■100 Datasheet Advance Information Product Features ■ ■


    Original     		PDF 80960JT 32-Bit Hz/64-bit 1710H 8710H SCBE2 gc540 GC80303 273358

    tlu 011

    Abstract: CP12 CP14 CP15 CRC-32 4000 SERIES MOTOROLA land dpu 230 RX10B
    Text: Architecture Guide C-5e/C-3e NETWORK PROCESSOR SILICON REVISION B0 C5EC3EARCH-RM Rev 04 PRODUCTION Architecture Guide C-5e/C-3e Network Processor Silicon Revision B0 C5EC3EARCH-RM Rev 04 Copyright 2004 Motorola, Inc. All rights reserved. No part of this documentation may


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		PDF 256Mb: 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM

    marking d6b

    Abstract: No abstract text available
    Text: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144 Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		PDF 256Mb: 256Mb 09005aef810c0ffc 256Mbx16x32RLDRAM marking d6b

    MT48LC16M16LF

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48LC16M16LF, MT48G16M16LF, MT48V16M16LF 4 MEG X 16 X 4 BANKS Features Figure 1: Ball Assignment Top View 54-Ball VFBGA • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can


    Original     		PDF 256Mb: 192-cycle 16M16 54-pin 09005aef80737ef7 256Mbx16 MT48LC16M16LF

    gc80303

    Abstract: am3 socket pin diagram socket am3 pinout 80960JT M66EN PAR64 REQ64 BGA-540-0-02-3201 intel G31 circuit diagram
    Text: Intel 80303 I/O Processor •66 MHz PCI-to-PCI Bridge MHz SDRAM and Internal Bus ■Complies with PCI Local Bus Specification, Revision 2.2 ■Universal 5 V and 3.3 V PCI Signaling Environment ■100 Datasheet Advance Information Product Features ■ ■


    Original     		PDF 80960JT 32-Bit Hz/64-bit gc80303 am3 socket pin diagram socket am3 pinout 80960JT M66EN PAR64 REQ64 BGA-540-0-02-3201 intel G31 circuit diagram

    intel G31 circuit diagram

    Abstract: 52III 273425 intel G31 circuit diagram free
    Text: Intel 80312 I/O Companion Chip • ■ ■ Interfaces directly to the Intel® 80200 Processor 66 MHz PCI-to-PCI Bridge 100 MHz SDRAM and Internal Bus Datasheet Product Features ■ ■ ■ ■ Core Interface Unit —100 MHz Request Bus —Data Bus shared with Intel® 80200


    Original     		PDF Hz/64-bit 64-Bit 1710H intel G31 circuit diagram 52III 273425 intel G31 circuit diagram free

    Untitled

    Abstract: No abstract text available
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


    Original     		PDF 512M8CN 256M16CP

    intel G31 circuit diagram

    Abstract: P5 microarchitecture am3 socket pin diagram intel 845 SERVICE MANUAL socket am3 pinout M66EN PAR64 REQ64 BGA-540-0-02-3201 BGA-540-0-02-3201-0275P-130
    Text: Intel 80312 I/O Companion Chip Datasheet Product Features • ■ ■ ■ Core Interface Unit —100 MHz Request Bus —Data Bus shared with Intel® 80200 processor and SDRAM —4-Entry Request Buffer PCI-to-PCI Bridge Unit —Primary and Secondary 66 MHz/64-bit


    Original     		PDF Hz/64-bit 64-Bit intel G31 circuit diagram P5 microarchitecture am3 socket pin diagram intel 845 SERVICE MANUAL socket am3 pinout M66EN PAR64 REQ64 BGA-540-0-02-3201 BGA-540-0-02-3201-0275P-130

    am3 socket pin diagram

    Abstract: gc80303 socket AM2 pinout socket am3 pinout differential relay 273358 PAD45
    Text: Intel 80303 I/O Processor •66 MHz PCI-to-PCI Bridge MHz SDRAM and Internal Bus ■Complies with PCI Local Bus Specification, Revision 2.2 ■Universal 5 V and 3.3 V PCI Signaling Environment ■100 Datasheet Product Features ■ ■ ■ ■ High Performance 100 MHz Intel® 80960JT


    Original     		PDF 80960JT 32-Bit Hz/64-bit am3 socket pin diagram gc80303 socket AM2 pinout socket am3 pinout differential relay 273358 PAD45

    SA-930

    Abstract: 273358 intel G31 circuit diagram
    Text: Intel 80303 I/O Processor •66 MHz PCI-to-PCI Bridge MHz SDRAM and Internal Bus ■Complies with PCI Local Bus Specification, Revision 2.2 ■Universal 5 V and 3.3 V PCI Signaling Environment ■100 Datasheet Advance Information Product Features ■ ■


    Original     		PDF 80960JT 32-Bit Hz/64-bit 1710H 8710H SA-930 273358 intel G31 circuit diagram

    273358

    Abstract: intel G31 circuit diagram
    Text: Intel 80303 I/O Processor • ■ ■ ■ 66 MHz PCI-to-PCI Bridge 100 MHz SDRAM and Internal Bus Complies with PCI Local Bus Specification, Revision 2.2 Universal 5 V and 3.3 V PCI Signaling Environment Datasheet Advance Information Product Features ■


    Original     		PDF 80960JT 32-Bit Hz/64-bit 1710H 8710H 273358 intel G31 circuit diagram

    1006h

    Abstract: 1558h 80960RM 80960JT 80960RN M66EN SA12 SA13 1508H 256Mbx16
    Text: Design Considerations Migrating from Intel 80960RM/RN I/O Processor to Intel® 80303 I/O Processor Application Note June 2000 Order Number: 273396-001 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		PDF 80960RM/RN 80960RM/RN com/design/iio/applnots/273255 com/design/iio/specupdt/273164 1006h 1558h 80960RM 80960JT 80960RN M66EN SA12 SA13 1508H 256Mbx16

    smd transistor marking HT1

    Abstract: 256Mb SMD d1c smd transistor d4d MT49H16M16 MT49H8M32 F1198 38P11
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/


    Original     		PDF 256Mb: MT49H8M32 MT49H16M16 144-Ball se-3900 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM smd transistor marking HT1 256Mb SMD d1c smd transistor d4d MT49H16M16 MT49H8M32 F1198 38P11

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.21, Oct. 2013 M471B5674QH0 M471B5173QH0 M471B1G73QH0 M474B5173QH0 M474B1G73QH0 204pin Unbuffered SODIMM based on 4Gb Q-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


    Original     		PDF M471B5674QH0 M471B5173QH0 M471B1G73QH0 M474B5173QH0 M474B1G73QH0 204pin 78FBGA K4B4G0846Q 512Mbx8 1Gx72