5369B Search Results

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

5344b

Abstract: 5347b diode 5361B 5362B IN 5344B 5357B 5374B S200-2-00 5348B 5363B
Contextual Info: 1N5344B - 1 N5388B VISHAY 5WZENER DIODES fL IT E K K r P O W E R S E M IC O N D U C T O R j Features Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal Vz is Standard 100% Tested A A

5338B

Abstract: 5339b 5359b 5341B zener 5359B 5340B 5344b 5366B 5353B zener diode ab
Contextual Info: 1N5333B thru 1N5388B Microsemi Corp. f The dtoóe experts / SANTA ANA, CA SCOTTSDALE, A Z / F o r m o re inform ation call: / 602 941-6300 SILICON 5 WATT ZENER DIODES FEATU RES • Z E N E R VO LTAG E 3.3V to 200V • HIGH S U R G E C U R R E N T C A P AB ILITY

5349B

Abstract: 5352B 5353B 5364b 5375B 5366B 5363B 5359B 5350B 5367B
Contextual Info: 1N 5347B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

IN 5349B

Abstract: 5377B 5357B 5368B 5363b in 5352b in 5359b 5349b 5364b 5352b
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

zener 5359B

Abstract: 5349B 5346B 5347B zener 5349b 5353B 5359b 5352b 5362B 5350B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Nominal Zener voltage Nominale Zener-Spannung 8.2…200 V Standard tolerance of Zener voltage Standard-Toleranz der Zener Spannung ±5% Plastic case – Kunststoffgehäuse ~ DO-201

in 5359b

Abstract: IN 5349B in 5352b 5357B 5346B 5369b 5349b 5388b 5345B 5352b
Contextual Info: Diotec 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Ø 4.5 ±0.1 Silizium-Leistungs-Z-Dioden Nominal breakdown voltage Nenn-Arbeitsspannung 8.7…200 V Standard tolerance of Z-voltage Standard-Toleranz der Arbeitsspannung ± 5 % (E24) Plastic case – Kunststoffgehäuse

in5338b

Abstract: in5338b Zener diode in5369b IN5338 in5333B IN5341 in5349b in53418 Zener diode in5347b IN5359b
Contextual Info: 1N 5333B thru 1N 5388B I Microsemi Corp. $ The diode experts SCOTTSDALE , AZ For more information call: 602 941-6300 SILICON 5 WATT ZENER DIODES FEATUR ES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TO LERANCES - SEE NOTE 1

Contextual Info: 1 N 5345 B.1 N 5388 B 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 8.7.200 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% /4 .5 " Plastic case KunststofFgehäuse ~ D0-201 Weight approx.

5346B

Abstract: 5349B 5375B 5353b 5359B 5345B 5350B 1n5376b 5361B 5358B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power dissipation Maximale Verlustleistung Ø 4.5 5W ±0.1 7.5 ±0.1 62.5 ±0.5 Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.

1N5958

Abstract: MLL5236B MLL34 MLL5243B lN3046 motorola 1N5956b 1N4728A MLL4728A MLL5221B MLL5222B
Contextual Info: General-Purpose Regulator Diodes continued 500 mW 1 W att 1 W att 1 .5 W att 5 W att N om inal Ze n e r Voltage Cathode = Po la rity M ark Cathode = Polarity M ark Cathode to Case Cathode = Polarity M ark C athode = Polarity M ark ('N ote 1) (•Notes 2 ,6 , 14)

5342B

Abstract: 1n 4148 zener diode IN5956B diode IN 5342B IN 5342B Zener Diode 4148 zener T 4148 IN5913B in5388b IN5342B
Contextual Info: ZENER DIODES 1 WATT ZENER DIODE-PLASTIC O P E R A T IN G A N D S TO R A G E T E M P E R A T U R E - 6 5 ° C to + 1 75 °C IN 4 7 3 6 THRU IN 4 7 6 4 *E LE C T R IC A L C H A R A C T E R IS T IC S Ta = 2 5 °C u n le ss o th e rw ise n o te d V f = 1.2 V M ax,

IN5350B

Abstract: 1N53588 IN5350 IN5388 IN5342B IN53888 1N53448 1N53358 IN5359b 1N53768
Contextual Info: INTERNATIONAL SEMICOND M'îE D T0G037Ö 0000G3L. Ô41 • I S E M International Semiconductor, Inc . 5 WATT Z E N E R DIOD ES H I G H S UR G E C U R R E N T C A PA B I LI T Y 3 . 3 TO 2 0 0 VOLTS 1N5333B thru 1N5388B ELECTRICAL CHARACTERISTICS @25’C REGULATOR

2SC1841

Abstract: transistor 2sc1841 ct 3f5 1 PA33
Contextual Info: b L fJrisT JU M is N P N x »J U > h ^ > > 7 . 9 f e M ìÈ L m iR m 4# it JMfc : m m o { a i f i i i i p i , { g à i ® * -i •/ -f - > x im x -è o R B tŒ , 7, so mA tv<7)&mk ÿ4 rm 1 1 it e Î5 h F E £ < 7 )-f, ® Î I J # l i ' l J S * i n T tb T "i'o

in5388b

Abstract: IN5340B IN5368B IN5342B IN 5342B IN5343b IN 5338B diode IN 5342B 5338B 5388b
Contextual Info: 1N 5333B thru 1N 5388B Micro/semi Corp. / SANTA ANA, CA The d'Ode e x p e n s SCOTTSDALE, AZ For more inform ation call: / 602 94I-6300 FEATURES SILICON 5 WATT ZENER DIODES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TOLERANCES - SEE NOTE I

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

5349B

Abstract: 5357B 5364b 5366B 5352b 5359b 5369b 5363b 5353b 5350B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Silicon-Power-Z-Diodes (non-planar technology) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

5350B

Contextual Info: SILICOM_ _ D TOPES Us.A. CASK S ZENER :_ D O -4 1 _ D O -2 7 A_D O -2 7 1 .3 H • T a - 2 3 ° C ZEN E R D IO D E S _ Case DO-41 TEMP. 1 I ZT