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    5364B TO Search Results

    5364B TO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPD46185364BF1-E40-EQ1-A Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray Visit Renesas Electronics Corporation
    UPD46365364BF1-E40-EQ1 Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray Visit Renesas Electronics Corporation
    UPD46365364BF1-E40Y-EQ1 Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray Visit Renesas Electronics Corporation
    UPD46185364BF1-E40-EQ1 Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray Visit Renesas Electronics Corporation
    UPD46185364BF1-E40Y-EQ1-A Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray Visit Renesas Electronics Corporation

    5364B TO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    5356b

    Abstract: 5352B 5353B in 5352b 5361B 1N5348B 5349B 5351B DO-201AE in 5349b
    Text: DATA SHEET 1N5348B SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 11 to 39 Volts CURRENT 5.0 Watts Unit: inch mm DO-201AE FEATURES • For surface mounted applications in order to optimize board space. .042(1.07) .037(0.94) 1.0(25.4)MIN. • Low profile package


    Original     		1N5348B DO-201AE DO-201AE 5356b 5352B 5353B in 5352b 5361B 5349B 5351B in 5349b PDF

    zener 5359B

    Abstract: 5349B 5346B 5347B zener 5349b 5353B 5359b 5352b 5362B 5350B
    Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Nominal Zener voltage Nominale Zener-Spannung 8.2…200 V Standard tolerance of Zener voltage Standard-Toleranz der Zener Spannung ±5% Plastic case – Kunststoffgehäuse ~ DO-201


    Original     		5345B 5388B DO-201 UL94V-0 zener 5359B 5349B 5346B 5347B zener 5349b 5353B 5359b 5352b 5362B 5350B PDF

    in 5359b

    Abstract: IN 5349B in 5352b 5357B 5346B 5369b 5349b 5388b 5345B 5352b
    Text: Diotec 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Ø 4.5 ±0.1 Silizium-Leistungs-Z-Dioden Nominal breakdown voltage Nenn-Arbeitsspannung 8.7…200 V Standard tolerance of Z-voltage Standard-Toleranz der Arbeitsspannung ± 5 % (E24) Plastic case – Kunststoffgehäuse


    Original     		5345B 5388B DO-201 UL94V-0 in 5359b IN 5349B in 5352b 5357B 5346B 5369b 5349b 5388b 5345B 5352b PDF

    5349B

    Abstract: 5357B 5364b 5366B 5352b 5359b 5369b 5363b 5353b 5350B
    Text: 1N 5345B … 1N 5388B 5 W Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Silicon-Power-Z-Diodes (non-planar technology) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse


    Original     		5345B 5388B DO-201 UL94V-0 5349B 5357B 5364b 5366B 5352b 5359b 5369b 5363b 5353b 5350B PDF

    5346B

    Abstract: 5349B 5375B 5353b 5359B 5345B 5350B 1n5376b 5361B 5358B
    Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power dissipation Maximale Verlustleistung Ø 4.5 5W ±0.1 7.5 ±0.1 62.5 ±0.5 Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.


    Original     		5345B 5388B DO-201 UL94V-0 5345B 5346B 5347B 5348B 5349B 5350B 5375B 5353b 5359B 1n5376b 5361B 5358B PDF

    5346B

    Abstract: 5388B 5359B 5368B 5366B 5363b 5358B 5349B 5369b 5375B
    Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse


    Original     		5345B 5388B DO-201 UL94V-0 5346B 5388B 5359B 5368B 5366B 5363b 5358B 5349B 5369b 5375B PDF

    5349B

    Abstract: 5352B 5353B 5364b 5375B 5366B 5363B 5359B 5350B 5367B
    Text: 1N 5347B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse


    Original     		5347B 5388B UL94V-0 DO-201 5347B 5348B 5349B 5350B 5351B 5352B 5353B 5364b 5375B 5366B 5363B 5359B 5367B PDF

    IN 5349B

    Abstract: 5377B 5357B 5368B 5363b in 5352b in 5359b 5349b 5364b 5352b
    Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse


    Original     		5345B 5388B DO-201 UL94V-0 IN 5349B 5377B 5357B 5368B 5363b in 5352b in 5359b 5349b 5364b 5352b PDF

    280-pixel

    Abstract: CMOS image sensor fingerprint circuit optical fingerprint sensor AT77C102B AT77C102B-CB01YV AT77C102B-CB02YV 4 bit adc
    Text: 1. Features • • • • • • • • • • • • Sensitive Layer Over a 0.35 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02" x 0.55" Image Array: 8 x 280 = 2240 pixels Pixel Pitch: 50 µm x 50 µm = 500 dpi Pixel Clock: up to 2 MHz Enabling up to 1780 Frames per Second


    Original     		5364C 280-pixel CMOS image sensor fingerprint circuit optical fingerprint sensor AT77C102B AT77C102B-CB01YV AT77C102B-CB02YV 4 bit adc PDF

    circuit diagram for fingerprint sensor

    Abstract: 5364b diagram of fingerprint sensor optical fingerprint sensor AT77C102B AT77C102B-CB01YV AT77C102B-CB02YV Linear fingerprint sensor specifications CMOS image sensor fingerprint circuit microcontroller fingerprint application
    Text: 1. Features • • • • • • • • • • • • Sensitive Layer Over a 0.35 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02" x 0.55" Image Array: 8 x 280 = 2240 pixels Pixel Pitch: 50 µm x 50 µm = 500 dpi Pixel Clock: up to 2 MHz Enabling up to 1780 Frames per Second


    Original     		5364C circuit diagram for fingerprint sensor 5364b diagram of fingerprint sensor optical fingerprint sensor AT77C102B AT77C102B-CB01YV AT77C102B-CB02YV Linear fingerprint sensor specifications CMOS image sensor fingerprint circuit microcontroller fingerprint application PDF

    5344b

    Abstract: 5347b diode 5361B 5362B IN 5344B 5357B 5374B S200-2-00 5348B 5363B
    Text: 1N5344B - 1 N5388B VISHAY 5WZENER DIODES fL IT E K K r P O W E R S E M IC O N D U C T O R j Features Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal Vz is Standard 100% Tested A A


    OCR Scan     		1N5344B N5388B MIL-STD-202, DS21407 1N5344B-1N5388B 5344b 5347b diode 5361B 5362B IN 5344B 5357B 5374B S200-2-00 5348B 5363B PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 N 5345 B.1 N 5388 B 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 8.7.200 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% /4 .5 " Plastic case KunststofFgehäuse ~ D0-201 Weight approx.


    OCR Scan     		D0-201 UL94V-0 0D1RS14 DGG174 PDF

    in5388b

    Abstract: IN5340B IN5368B IN5342B IN 5342B IN5343b IN 5338B diode IN 5342B 5338B 5388b
    Text: 1N 5333B thru 1N 5388B Micro/semi Corp. / SANTA ANA, CA The d'Ode e x p e n s SCOTTSDALE, AZ For more inform ation call: / 602 94I-6300 FEATURES SILICON 5 WATT ZENER DIODES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TOLERANCES - SEE NOTE I


    OCR Scan     		5333B 5388B 94I-6300 in5388b IN5340B IN5368B IN5342B IN 5342B IN5343b IN 5338B diode IN 5342B 5338B 5388b PDF

    5338B

    Abstract: 5339b 5359b 5341B zener 5359B 5340B 5344b 5366B 5353B zener diode ab
    Text: 1N5333B thru 1N5388B Microsemi Corp. f The dtoóe experts / SANTA ANA, CA SCOTTSDALE, A Z / F o r m o re inform ation call: / 602 941-6300 SILICON 5 WATT ZENER DIODES FEATU RES • Z E N E R VO LTAG E 3.3V to 200V • HIGH S U R G E C U R R E N T C A P AB ILITY


    OCR Scan     		1N5333B 1N5388B 5338B 5339b 5359b 5341B zener 5359B 5340B 5344b 5366B 5353B zener diode ab PDF

    in5338b

    Abstract: in5338b Zener diode in5369b IN5338 in5333B IN5341 in5349b in53418 Zener diode in5347b IN5359b
    Text: 1N 5333B thru 1N 5388B I Microsemi Corp. $ The diode experts SCOTTSDALE , AZ For more information call: 602 941-6300 SILICON 5 WATT ZENER DIODES FEATUR ES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TO LERANCES - SEE NOTE 1


    OCR Scan     		1N5342 1N5344B in5338b in5338b Zener diode in5369b IN5338 in5333B IN5341 in5349b in53418 Zener diode in5347b IN5359b PDF

    1N5958

    Abstract: MLL5236B MLL34 MLL5243B lN3046 motorola 1N5956b 1N4728A MLL4728A MLL5221B MLL5222B
    Text: General-Purpose Regulator Diodes continued 500 mW 1 W att 1 W att 1 .5 W att 5 W att N om inal Ze n e r Voltage Cathode = Po la rity M ark Cathode = Polarity M ark Cathode to Case Cathode = Polarity M ark C athode = Polarity M ark ('N ote 1) (•Notes 2 ,6 , 14)


    OCR Scan     		362B-01 DO-13) DO-41) MLL5221B MLL5222B MLL5223B MLL5224B MLL5225B MLL5226B 1N4728A 1N5958 MLL5236B MLL34 MLL5243B lN3046 motorola 1N5956b MLL4728A PDF

    5350B

    Abstract: No abstract text available
    Text: SILICOM_ _ D TOPES Us.A. CASK S ZENER :_ D O -4 1 _ D O -2 7 A_D O -2 7 1 .3 H • T a - 2 3 ° C ZEN E R D IO D E S _ Case DO-41 TEMP. 1 I ZT


    OCR Scan     		DO-41 5350B PDF

    BZX 48c 6v8

    Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
    Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P


    OCR Scan     		2004C 2004S 2004D Z5250B T3904 Z5251B Z5252B Z5253B Z5254B Z5255B BZX 48c 6v8 PT2369 code Cj5 CMXZ11VTO 7006S PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF