53131 Search Results

Contextual Info: N AMER PHILIPS/ DISCRE TE 2SE D 1^53131 002244S 5 BYR30 SERIES T -Q 1 -I7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

Contextual Info: N AUER PHILIPS/DISCRETE E5E D • ^53131 QQEHb 31 E ■ BYV74 SERIES J y 7^03-1* ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in plastic envelopes which feature low forward voltage drop, very fast reverse recovery times and soft-recovery characteristic. They are

BSR12

Contextual Info: ^53131 DD3S5b4 0T2 H A P X N AUER PHI LIP S/DISCRETE BSR12 E7E D J V SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon transistor in a microminiature plastic envelope. It is intended for high-speed, saturated switching applications for industrial service in thick and thin-film circuits.

transistor IC BT 134

Contextual Info: 2SE D N AMER PHILIPS / D I S CR E T E bt.53131 005D3bS fl P o w e rM O S tra n s is to r B U K 444-450B T N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK455-500B

Contextual Info: N AUER PHILIPS/DISCRETE D bb.53131 DDBObba 76T H A P X Product Specification Philips Semiconductors PowerM OS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

NDS 40-20

Abstract: NDS 40-30 BUK442 BUK442-50A BUK442-50B 00E0333
Contextual Info: N AMER P H I L I P S / D I S C R E T E ESE D • ^53131 0020330 0 ■ P o w erM O S tra n s isto r B U K 442-50A B U K 442-50B T - 3 < ? - o <7 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUS21

Abstract: BUS21B BUS21C TO3 philips T-33-73
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • ^53131 0G1Ö741 Q ■ BUS21 SERIES T - 33-/3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

philips bfq

Abstract: BFQ253A BFQ233 BFQ233A BFQ253
Contextual Info: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a

BFG90A

Abstract: BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136
Contextual Info: N AMER PHILIPS/DISCRETE 25 E bt.53131 Q Q 1 7 t 7 Î D Q • BFG51 T *- 31- I S~ P-N-P 2 GHz W IDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in C A T V and M A T V systems, up to 2 GHz.

MC 140 transistor

Abstract: "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a
Contextual Info: N AMER PHILIPS/DISCRETE j ObE D • PowerMÔS transistor ^53131 0014015 5 m BÜZ355 r - 3cj - l 3 May 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

V103 TRANSISTOR

Abstract: BUZ80A T0220AB V103 buz80
Contextual Info: PowerM OS transistor_ BU Z80A _ N AMER PHI LI PS /D I SC RE T E DtE D • ^53131 GOmSMT ~ T ■ T - - S 9 - I I May 1987 G EN ER A L DESCRIPTION N-channel enchancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in

Contextual Info: QbE D N AMER PHILIPS/DISCRETE • ^53131 Q011T47? |[ B TW 43 SERIES o c r . i c - / TRIACS Glass-passivated silicon triacs in metal envelopes, intended for industrial a.c. power control and particularly suitable fo r static switching o f 3-phase induction motors. They may also be used for

Contextual Info: _ _ _ N AUER PHILIPS/DISCRETE _ ! i_ _ OLE I> • 0 8 0 0 1 3 0 AMPEREX, H IC K SVILLE 86D 0 1 80 8 D T-33-05 ^53131 00m04b b | BLX91CB SILICON PUNAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor primarily designed fo r use in fast-switching wide-band video

Contextual Info: Philips Semiconductors 3^53131 ODETSES 5bT Mi APX Product specification UHF power transistor BLV103 _ N ANER P H IL IP S /M S C R E T E bTE D _ QUICK REFERENCE DATA FEATURES • Internal matching for an optimum wideband capability and high gain

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53131 D O a E b ? 11 & ■ B Y V 118F S E R IE S J 7=0 2 -1 7 v SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in SOT-186 full-pack) plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. Their electrical

Contextual Info: N AMER PHILIPS/DISCRETE OLE D • bt.53131 0015^75 4 ■ I BSR40 to 43 _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in miniature plastic envelopes intended for application in thick and thin-film circuits.

Contextual Info: Agilent 53131A/132A/181A Counters High-performance, low-cost counters simplify and speed systems and bench frequency measurements Data Sheet Recommended replacement products: 53200 Series RF & universal frequency counter/timers Data sheet publication number: 5990-6283EN

BYX50-200

Abstract: BYX50 PHILIPS BYX50-200 ALPS 102 IEC134
Contextual Info: N AUER PH IL IPS/DISCR ETE TDD D 1^53131 0010S20 T BYX50 SERIES T -0 3 -/7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists of the following types:

BUK442-50A

Abstract: BUK442 BUK442-50B
Contextual Info: N AMER P H I L I P S / D I S C R E T E ESE D • ^53131 0020330 0 ■ PowerMOS transistor BUK442-50A BUK442-50B T - 3 < ? - o <7 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUZ24

Abstract: IEC134
Contextual Info: ObE D N AUER PHILIPS/DISCRETE ^53131 00145TÖ BUZ24 PowerMOS transistor 1 T -S i-lS July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

BF994 M94

Abstract: BF994 FET MARKING CODE
Contextual Info: _I f N AMER PHILIPS/DISCRETE obE D • Q0 i ^53131 J 30 ü a 4 1 BF994 L T ' 3 i - a r SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television tuners and

diode 400V 4A

Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
Contextual Info: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A

15S2

Abstract: BY229F IEC134 M2296 D8663
Contextual Info: 2 SE D N AMER PHIL I P S / D I S C R E T E • ^53131 0GSS30S G ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse

BFU310

Abstract: BFU308 BFU309 L7E transistor transistor 309
Contextual Info: ^53131 Philips Semiconductors □□E3bfl4 TT7 APX Preliminary specification N-channel silicon field-effect transistors mi N AHFR FEATURES BFU308/309/310 PHT I T P S / D T S f R F T F L7F D PIN CONFIGURATION • Low noise • Interchangeability of drain and