52506PE Search Results

Contextual Info: VEC2813 Ordering number : ENA0384 VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

Contextual Info: MCH6613 Ordering number : EN6920A SANYO Semiconductors DATA SHEET MCH6613 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low

Contextual Info: MCH6613 Ordering number : EN6920B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6613 General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low

diode sy 710

Abstract: VEC2813 N1407
Contextual Info: VEC2813 Ordering number : ENA0384B SANYO Semiconductors DATA SHEET VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

70306

Abstract: MCH6615 IT0251
Contextual Info: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low

Contextual Info: MCH6606 Ordering number : EN6461A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

IT0251

Abstract: ta2909 MCH6614 TA-2909
Contextual Info: MCH6614 注文コード No. N 6 7 9 5 A 三洋半導体データシート 半導体ニューズ No.N6795 をさしかえてください。 MCH6614 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

VEC2813

Contextual Info: VEC2813 注文コード No. N A 0 3 8 4 B 三洋半導体データシート 半導体データシート No.NA0384A をさしかえてください。 VEC2813 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード

MCH6618

Abstract: TA-3264
Contextual Info: MCH6618 注文コード No. N 6 9 7 3 A 三洋半導体データシート 半導体ニューズ No.N6973 をさしかえてください。 MCH6618 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

Contextual Info: MCH6604 Ordering number : EN6459B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6604 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting

MCH6606

Abstract: IT00049
Contextual Info: MCH6606 注文コード No. N 6 4 6 1 B 三洋半導体データシート 半導体データシート No.N6461A をさしかえてください。 MCH6606 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

Contextual Info: Ordering number : EN6459C MCH6604 N-Channel Power MOSFET http://onsemi.com 50V, 0.25A, 7.8Ω, Dual MCPH6 Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting

MCH6613

Abstract: PG 014 69-206
Contextual Info: MCH6613 Ordering number : EN6920A SANYO Semiconductors DATA SHEET MCH6613 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low

Contextual Info: MCH6606 Ordering number : EN6461A N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

MCH6618

Contextual Info: MCH6618 Ordering number : EN6973A SANYO Semiconductors DATA SHEET MCH6618 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • Composite type with an N-channel and a P-channel MOSFET, allowing high-density mounting.

MCH6604

Contextual Info: MCH6604 Ordering number : EN6459A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6604 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Contextual Info: Ordering number : EN6920C MCH6613 Power MOSFET http://onsemi.com 30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6 Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting

Contextual Info: MCH6613 Ordering number : EN6920A MCH6613 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.

Contextual Info: MCH6614 Ordering number : EN6795A MCH6614 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.

MCH6613

Contextual Info: Ordering number : EN6920C MCH6613 Power MOSFET http://onsemi.com 30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6 Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting

MCH6614

Abstract: TA-2909
Contextual Info: MCH6614 Ordering number : EN6795A SANYO Semiconductors DATA SHEET MCH6614 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low

69-206

Abstract: MCH6613 TA-3241
Contextual Info: MCH6613 注文コード No. N 6 9 2 0 A 三洋半導体データシート 半導体ニューズ No.N6920 をさしかえてください。 MCH6613 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

IT0251

Abstract: MCH6615 TA2910
Contextual Info: MCH6615 注文コード No. N 6 7 9 6 A 三洋半導体データシート 半導体ニューズ No.N6796 をさしかえてください。 MCH6615 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス

15A50

Abstract: diode sy 710 VEC2813
Contextual Info: VEC2813 Ordering number : ENA0384A SANYO Semiconductors DATA SHEET VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package